NTMD2C02R2SG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pin Count :

8

Surface Mount :

yes

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.043Ohm

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

5.2A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

FET Type :

N and P-Channel

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

48A

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 10V

JESD-30 Code :

R-PDSO-G8

Number of Elements :

2

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

43m Ω @ 4A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

1.2V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

5.2A 3.4A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Power - Max :

2W

DS Breakdown Voltage-Min :

20V

Peak Reflow Temperature (Cel) :

260

FET Feature :

Logic Level Gate

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL