NTMD2P01R2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

10V

Published :

2006

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.4A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Max Power Dissipation :

710mW

Terminal Form :

Gull wing

FET Type :

2 P-Channel (Dual)

Avalanche Energy Rating (Eas) :

350 mJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Mount :

Surface Mount

Number of Terminations :

8

Transistor Element Material :

SILICON

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

2.3A

Drain to Source Breakdown Voltage :

-16V

Drain-source On Resistance-Max :

0.1Ohm

Turn-Off Delay Time :

33 ns

Qualification Status :

Not Qualified

Pin Count :

8

Voltage - Rated DC :

-16V

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 16V

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

16V

Number of Elements :

2

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Transistor Application :

SWITCHING

Rise Time :

35ns

Fall Time (Typ) :

29 ns

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Power Dissipation :

2W

Current Rating :

-2.3A

Pulsed Drain Current-Max (IDM) :

9A

Peak Reflow Temperature (Cel) :

260

FET Feature :

Logic Level Gate

Lead Free :

Lead Free

Continuous Drain Current (ID) :

-3.85A

JESD-609 Code :

e3