NTMD2C02R2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Pulsed Drain Current-Max (IDM) :

48A

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

20V

Drain-source On Resistance-Max :

0.043Ohm

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G8

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

JESD-609 Code :

e3

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

5.2A

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

FET Type :

N and P-Channel

Power - Max :

2W

Current - Continuous Drain (Id) @ 25°C :

5.2A 3.4A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

43m Ω @ 4A, 4.5V

Pbfree Code :

yes

DS Breakdown Voltage-Min :

20V