NTMD4840NR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

5.5A

RoHS Status :

ROHS3 Compliant

Base Part Number :

NTMD4840N

Fall Time (Typ) :

3 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Number of Pins :

8

Turn On Delay Time :

7.6 ns

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 10V

Element Configuration :

Dual

Length :

5mm

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Height :

1.5mm

Turn-Off Delay Time :

17 ns

Pin Count :

8

Published :

2007

Drain Current-Max (Abs) (ID) :

4.5A

Surface Mount :

yes

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 15V

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

1.95W

ECCN Code :

EAR99

Power - Max :

680mW

FET Type :

2 N-Channel (Dual)

Max Power Dissipation :

800mW

Factory Lead Time :

31 Weeks

Rise Time :

5ns

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

24m Ω @ 6.9A, 10V

Terminal Form :

Gull wing

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

4.5A

Width :

4mm