NTMD4N03R2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Fall Time (Typ) :

10 ns

Max Power Dissipation :

2W

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

30V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Turn On Delay Time :

7 ns

Resistance :

48mOhm

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

14ns

Voltage - Rated DC :

30V

Factory Lead Time :

36 Weeks

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

16 ns

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Pin Count :

8

Base Part Number :

NTMD4N03

JESD-609 Code :

e3

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 20V

Number of Pins :

8

Current Rating :

4A

Element Configuration :

Dual

Power Dissipation :

2W

Length :

5mm

Height :

1.5mm

Contact Plating :

Tin

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

4A

Continuous Drain Current (ID) :

4A

Number of Terminations :

8

Width :

4mm

Rds On (Max) @ Id, Vgs :

60m Ω @ 4A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2006

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant