NTMD4884NFR2G
- Mfr.Part #
- NTMD4884NFR2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 3.3A 8SOIC
- Stock
- 16,565
- In Stock :
- 16,565
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- JESD-609 Code :
- e3
- Drain Current-Max (Abs) (ID) :
- 3.3A
- Qualification Status :
- COMMERCIAL
- Rds On (Max) @ Id, Vgs :
- 48m Ω @ 4A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 4.2nC @ 4.5V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PDSO-G8
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Power Dissipation-Max :
- 770mW Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 15V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 8
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Pin Count :
- 8
- Surface Mount :
- yes
- Drain to Source Voltage (Vdss) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.048Ohm
- Reach Compliance Code :
- Unknown
- Feedback Cap-Max (Crss) :
- 42 pF
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 3.3A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Feature :
- Schottky Diode (Isolated)
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Terminal Finish :
- MATTE TIN
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- NTMD4884NFR2G

N-Channel Tape & Reel (TR) 48m Ω @ 4A, 10V ±20V 360pF @ 15V 4.2nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
NTMD4884NFR2G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 360pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 3.3A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
NTMD4884NFR2G Features
a 30V drain to source voltage (Vdss)
NTMD4884NFR2G Applications
There are a lot of Rochester Electronics, LLC
NTMD4884NFR2G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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