IXFE80N50
- Mfr.Part #
- IXFE80N50
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 72A SOT-227B
- Stock
- 8,943
- In Stock :
- 8,943
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- N-Channel
- Reach Compliance Code :
- Compliant
- Terminal Position :
- UPPER
- Pulsed Drain Current-Max (IDM) :
- 320A
- Number of Elements :
- 1
- Power Dissipation-Max :
- 580W Tc
- Polarity/Channel Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.055Ohm
- Pin Count :
- 4
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Mounting Type :
- Chassis Mount
- Supplier Device Package :
- SOT-227B
- Current - Continuous Drain (Id) @ 25°C :
- 72A Tc
- RoHS :
- Details
- Power Dissipation :
- 580W
- Number of Pins :
- 4
- Product Status :
- Obsolete
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 25.42 mm
- Case Connection :
- Isolated
- Package / Case :
- SOT-227-4, miniBLOC
- DS Breakdown Voltage-Min :
- 500 V
- Additional Feature :
- AVALANCHE RATED
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Manufacturer :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 40A, 10V
- Qualification Status :
- Not Qualified
- Terminal Form :
- UNSPECIFIED
- JESD-30 Code :
- R-PUFM-X4
- Product :
- Power MOSFET Modules
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- Avalanche Energy Rating (Eas) :
- 6000 mJ
- Pbfree Code :
- yes
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 500V
- Power Dissipation (Max) :
- 580W (Tc)
- Minimum Operating Temperature :
- - 40 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Feature :
- --
- Maximum Operating Temperature :
- + 150 C
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 72 A
- Transistor Application :
- SWITCHING
- Product Category :
- Discrete Semiconductor Modules
- Base Product Number :
- IXFE80
- Series :
- HiPerFET™
- Number of Channels :
- 1 Channel
- Tradename :
- HyperFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2003
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -40°C~150°C TJ
- Number of Terminals :
- 4
- Turn-Off Delay Time :
- 102 ns
- Mount :
- Chassis Mount
- Mounting Style :
- Chassis Mount
- Drain to Source Voltage (Vdss) :
- 500V
- Brand :
- IXYS
- Length :
- 38.23 mm
- Package Shape :
- RECTANGULAR
- Input Capacitance (Ciss) (Max) @ Vds :
- 9890pF @ 25V
- Fall Time (Typ) :
- 27 ns
- Power Dissipation-Max (Abs) :
- 580 W
- Continuous Drain Current (ID) :
- 72A
- Rise Time :
- 70ns
- Surface Mount :
- No
- Height :
- 9.65 mm
- RoHS Status :
- RoHS Compliant
- Product Type :
- Discrete Semiconductor Modules
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IXFE80N50
IXFE80N50 Documents

N-Channel Tube 55m Ω @ 40A, 10V ±20V 9890pF @ 25V 380nC @ 10V 500V SOT-227-4, miniBLOC
IXFE80N50 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 6000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9890pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 72A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 72 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 102 ns.Peak drain current is 320A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFE80N50 Features
the avalanche energy rating (Eas) is 6000 mJ
a continuous drain current (ID) of 72A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 102 ns
based on its rated peak drain current 320A.
a 500V drain to source voltage (Vdss)
IXFE80N50 Applications
There are a lot of IXYS
IXFE80N50 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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