IXFE80N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

70ns

Continuous Drain Current (ID) :

72A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Chassis Mount

Mount :

Chassis Mount

Brand :

IXYS

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXFE80

Pbfree Code :

yes

Terminal Form :

UNSPECIFIED

DS Breakdown Voltage-Min :

500 V

Product :

Power MOSFET Modules

Series :

HiPerFET™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package :

Tube

Qualification Status :

Not Qualified

Product Category :

Discrete Semiconductor Modules

Power Dissipation-Max (Abs) :

580 W

Gate to Source Voltage (Vgs) :

20V

Length :

38.23 mm

JESD-30 Code :

R-PUFM-X4

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

380nC @ 10V

Terminal Position :

UPPER

Manufacturer :

IXYS

Product Type :

Discrete Semiconductor Modules

Maximum Operating Temperature :

+ 150 C

Package / Case :

SOT-227-4, miniBLOC

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Compliant

Drain to Source Breakdown Voltage :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

55m Ω @ 40A, 10V

Width :

25.42 mm

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Input Capacitance (Ciss) (Max) @ Vds :

9890pF @ 25V

Pin Count :

4

Operating Temperature :

-40°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Surface Mount :

No

Number of Terminations :

4

Product Status :

Obsolete

Number of Terminals :

4

Package Shape :

RECTANGULAR

Supplier Device Package :

SOT-227B

Current - Continuous Drain (Id) @ 25°C :

72A Tc

Avalanche Energy Rating (Eas) :

6000 mJ

Vgs (Max) :

±20V

Turn-Off Delay Time :

102 ns

Power Dissipation :

580W

Power Dissipation-Max :

580W Tc

Tradename :

HyperFET

Mounting Style :

Chassis Mount

Drain-source On Resistance-Max :

0.055Ohm

Fall Time (Typ) :

27 ns

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 40 C

Drain Current-Max (Abs) (ID) :

72 A

Number of Pins :

4

Pulsed Drain Current-Max (IDM) :

320A

Height :

9.65 mm

Drain to Source Voltage (Vdss) :

500V

RoHS :

Details

Number of Elements :

1

Published :

2003

Power Dissipation (Max) :

580W (Tc)

Case Connection :

Isolated

Transistor Polarity :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

FET Feature :

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