IXFE80N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

55m Ω @ 40A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

500 V

Avalanche Energy Rating (Eas) :

6000 mJ

Terminal Form :

UNSPECIFIED

Number of Channels :

1 Channel

Fall Time (Typ) :

27 ns

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

500V

Product Type :

Discrete Semiconductor Modules

Pbfree Code :

yes

Mounting Style :

Chassis Mount

Operating Temperature :

-40°C~150°C TJ

Mount :

Chassis Mount

Current - Continuous Drain (Id) @ 25°C :

72A Tc

Pin Count :

4

Product :

Power MOSFET Modules

Product Category :

Discrete Semiconductor Modules

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Length :

38.23 mm

Number of Elements :

1

Width :

25.42 mm

Number of Pins :

4

Number of Terminals :

4

Product Status :

Obsolete

Drain to Source Breakdown Voltage :

500V

Packaging :

Tube

Drain-source On Resistance-Max :

0.055Ohm

FET Feature :

--

Additional Feature :

AVALANCHE RATED

Package Shape :

RECTANGULAR

Series :

HiPerFET™

JESD-30 Code :

R-PUFM-X4

Tradename :

HyperFET

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

Isolated

Power Dissipation :

580W

Brand :

IXYS

Published :

2003

Package / Case :

SOT-227-4, miniBLOC

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

SOT-227B

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

72A

Height :

9.65 mm

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

580W Tc

Vgs(th) (Max) @ Id :

4.5V @ 8mA

RoHS :

Details

Rise Time :

70ns

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

380nC @ 10V

Maximum Operating Temperature :

+ 150 C

Transistor Polarity :

N-Channel

Mounting Type :

Chassis Mount

Transistor Element Material :

SILICON

Power Dissipation (Max) :

580W (Tc)

Manufacturer :

IXYS

Pulsed Drain Current-Max (IDM) :

320A

Operating Mode :

ENHANCEMENT MODE

Package :

Tube

Turn-Off Delay Time :

102 ns

Base Product Number :

IXFE80

Terminal Position :

UPPER

Minimum Operating Temperature :

- 40 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

580 W

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

72 A

Input Capacitance (Ciss) (Max) @ Vds :

9890pF @ 25V

Number of Terminations :

4