IXFE44N50QD2

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Mfr.Part #
IXFE44N50QD2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 39A SOT-227B
Stock
9,614
In Stock :
9,614

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
FET Type :
N-Channel
Case Connection :
Isolated
Drain to Source Breakdown Voltage :
500V
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
4V @ 4mA
RoHS :
Details
Element Configuration :
Single
Mounting Style :
Chassis Mount
Continuous Drain Current (ID) :
39A
Package / Case :
SOT-227-4, miniBLOC
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Polarity :
N-Channel
Brand :
IXYS
Reach Compliance Code :
Compliant
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PUFM-X4
Drain-source On Resistance-Max :
0.12Ohm
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Rds On (Max) @ Id, Vgs :
120m Ω @ 22A, 10V
Length :
38.23 mm
Product :
Power MOSFET Modules
Power Dissipation (Max) :
400W (Tc)
Published :
2004
Product Category :
Discrete Semiconductor Modules
Manufacturer :
IXYS
Number of Terminations :
4
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
39A Tc
Power Dissipation-Max (Abs) :
400 W
Gate to Source Voltage (Vgs) :
20V
Number of Channels :
1 Channel
Pulsed Drain Current-Max (IDM) :
176A
Drain Current-Max (Abs) (ID) :
39 A
Height :
9.65 mm
Vgs (Max) :
±20V
Mounting Type :
Chassis Mount
Width :
25.42 mm
Qualification Status :
Not Qualified
Number of Elements :
1
Fall Time (Typ) :
10 ns
Number of Pins :
4
Product Status :
Active
Power Dissipation :
400W
Power Dissipation-Max :
400W Tc
Rise Time :
22ns
Base Product Number :
IXFE44
Mount :
Chassis Mount
Series :
HiPerFET™
Minimum Operating Temperature :
- 40 C
Pin Count :
4
Operating Temperature :
-40°C~150°C TJ
Packaging :
Tube
Drain to Source Voltage (Vdss) :
500V
Number of Terminals :
4
Terminal Position :
UPPER
Transistor Element Material :
SILICON
Product Type :
Discrete Semiconductor Modules
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Feature :
-
Package :
Tube
Supplier Device Package :
SOT-227B
Terminal Form :
UNSPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Maximum Operating Temperature :
+ 150 C
Pbfree Code :
yes
DS Breakdown Voltage-Min :
500 V
Avalanche Energy Rating (Eas) :
2500 mJ
Package Shape :
RECTANGULAR
Configuration :
Single
Transistor Application :
SWITCHING
Turn-Off Delay Time :
75 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Mode :
ENHANCEMENT MODE
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE44N50QD2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, Number of Channels:1 Channel, Mounting Type:Chassis Mount, Number of Pins:4, Operating Temperature:-40°C~150°C TJ, IXFE44N50QD2 pinout, IXFE44N50QD2 datasheet PDF, IXFE44N50QD2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE44N50QD2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE44N50QD2


N-Channel Tube 120m Ω @ 22A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC

IXFE44N50QD2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8000pF @ 25V.This device has a continuous drain current (ID) of [39A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 39 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 176A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFE44N50QD2 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a 500V drain to source voltage (Vdss)


IXFE44N50QD2 Applications


There are a lot of IXYS
IXFE44N50QD2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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