IXFE44N50QD2
- Mfr.Part #
- IXFE44N50QD2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 39A SOT-227B
- Stock
- 9,614
- In Stock :
- 9,614
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Compliant
- Configuration :
- Single
- Terminal Form :
- UNSPECIFIED
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.12Ohm
- Width :
- 25.42 mm
- Pbfree Code :
- yes
- Series :
- HiPerFET™
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2004
- Rise Time :
- 22ns
- Packaging :
- Tube
- Length :
- 38.23 mm
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Transistor Element Material :
- SILICON
- Terminal Position :
- UPPER
- Operating Temperature :
- -40°C~150°C TJ
- Power Dissipation :
- 400W
- DS Breakdown Voltage-Min :
- 500 V
- Drain to Source Breakdown Voltage :
- 500V
- Power Dissipation-Max :
- 400W Tc
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 22A, 10V
- Package :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- SOT-227-4, miniBLOC
- Product Status :
- Active
- Product :
- Power MOSFET Modules
- Power Dissipation (Max) :
- 400W (Tc)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS :
- Details
- Pin Count :
- 4
- JESD-30 Code :
- R-PUFM-X4
- Number of Pins :
- 4
- Continuous Drain Current (ID) :
- 39A
- Surface Mount :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs) :
- 400 W
- Mounting Style :
- Chassis Mount
- Brand :
- IXYS
- Minimum Operating Temperature :
- - 40 C
- Turn-Off Delay Time :
- 75 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 176A
- Transistor Application :
- SWITCHING
- Product Type :
- Discrete Semiconductor Modules
- Case Connection :
- Isolated
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 39A Tc
- Supplier Device Package :
- SOT-227B
- Base Product Number :
- IXFE44
- FET Feature :
- -
- Qualification Status :
- Not Qualified
- Product Category :
- Discrete Semiconductor Modules
- Height :
- 9.65 mm
- Fall Time (Typ) :
- 10 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 8000pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Element Configuration :
- Single
- Number of Terminals :
- 4
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 500V
- Mounting Type :
- Chassis Mount
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 39 A
- Mount :
- Chassis Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Maximum Operating Temperature :
- + 150 C
- Transistor Polarity :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Vgs (Max) :
- ±20V
- Manufacturer :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Channels :
- 1 Channel
- Number of Terminations :
- 4
- Datasheets
- IXFE44N50QD2

N-Channel Tube 120m Ω @ 22A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC
IXFE44N50QD2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8000pF @ 25V.This device has a continuous drain current (ID) of [39A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 39 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 176A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFE44N50QD2 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a 500V drain to source voltage (Vdss)
IXFE44N50QD2 Applications
There are a lot of IXYS
IXFE44N50QD2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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