IXFE44N50QD2

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Mfr.Part #
IXFE44N50QD2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 39A SOT-227B
Stock
9,614
In Stock :
9,614

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
500V
Avalanche Energy Rating (Eas) :
2500 mJ
Package :
Tube
Height :
9.65 mm
Vgs (Max) :
±20V
FET Type :
N-Channel
Mounting Style :
Chassis Mount
RoHS :
Details
Rds On (Max) @ Id, Vgs :
120m Ω @ 22A, 10V
Power Dissipation-Max (Abs) :
400 W
Operating Mode :
ENHANCEMENT MODE
Brand :
IXYS
Supplier Device Package :
SOT-227B
Continuous Drain Current (ID) :
39A
Published :
2004
Qualification Status :
Not Qualified
DS Breakdown Voltage-Min :
500 V
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Case Connection :
Isolated
Pulsed Drain Current-Max (IDM) :
176A
Polarity/Channel Type :
N-Channel
Pin Count :
4
Fall Time (Typ) :
10 ns
Reach Compliance Code :
Compliant
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
UNSPECIFIED
Pbfree Code :
yes
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product :
Power MOSFET Modules
Element Configuration :
Single
Package Shape :
RECTANGULAR
Turn-Off Delay Time :
75 ns
Rise Time :
22ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Terminal Position :
UPPER
Base Product Number :
IXFE44
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
JESD-30 Code :
R-PUFM-X4
Product Category :
Discrete Semiconductor Modules
Gate to Source Voltage (Vgs) :
20V
Package / Case :
SOT-227-4, miniBLOC
Width :
25.42 mm
Power Dissipation :
400W
Length :
38.23 mm
Maximum Operating Temperature :
+ 150 C
Surface Mount :
No
Minimum Operating Temperature :
- 40 C
Mount :
Chassis Mount
Transistor Polarity :
N-Channel
Product Type :
Discrete Semiconductor Modules
Drain-source On Resistance-Max :
0.12Ohm
Number of Elements :
1
Vgs(th) (Max) @ Id :
4V @ 4mA
Power Dissipation-Max :
400W Tc
Series :
HiPerFET™
FET Feature :
-
Product Status :
Active
Drain to Source Voltage (Vdss) :
500V
Drain Current-Max (Abs) (ID) :
39 A
Current - Continuous Drain (Id) @ 25°C :
39A Tc
Number of Terminations :
4
Manufacturer :
IXYS
Operating Temperature :
-40°C~150°C TJ
Number of Terminals :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
4
Packaging :
Tube
Configuration :
Single
Power Dissipation (Max) :
400W (Tc)
Number of Channels :
1 Channel
Transistor Element Material :
SILICON
Mounting Type :
Chassis Mount
Datasheets
IXFE44N50QD2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE44N50QD2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, Operating Temperature:-40°C~150°C TJ, Number of Pins:4, Number of Channels:1 Channel, Mounting Type:Chassis Mount, IXFE44N50QD2 pinout, IXFE44N50QD2 datasheet PDF, IXFE44N50QD2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE44N50QD2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE44N50QD2


N-Channel Tube 120m Ω @ 22A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC

IXFE44N50QD2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8000pF @ 25V.This device has a continuous drain current (ID) of [39A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 39 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 176A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFE44N50QD2 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a 500V drain to source voltage (Vdss)


IXFE44N50QD2 Applications


There are a lot of IXYS
IXFE44N50QD2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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