IXFE44N50QD2

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Mfr.Part #
IXFE44N50QD2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 39A SOT-227B
Stock
9,614
In Stock :
9,614

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Compliant
Configuration :
Single
Terminal Form :
UNSPECIFIED
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.12Ohm
Width :
25.42 mm
Pbfree Code :
yes
Series :
HiPerFET™
RoHS Status :
ROHS3 Compliant
Published :
2004
Rise Time :
22ns
Packaging :
Tube
Length :
38.23 mm
Avalanche Energy Rating (Eas) :
2500 mJ
Transistor Element Material :
SILICON
Terminal Position :
UPPER
Operating Temperature :
-40°C~150°C TJ
Power Dissipation :
400W
DS Breakdown Voltage-Min :
500 V
Drain to Source Breakdown Voltage :
500V
Power Dissipation-Max :
400W Tc
Rds On (Max) @ Id, Vgs :
120m Ω @ 22A, 10V
Package :
Tube
Gate to Source Voltage (Vgs) :
20V
Package / Case :
SOT-227-4, miniBLOC
Product Status :
Active
Product :
Power MOSFET Modules
Power Dissipation (Max) :
400W (Tc)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS :
Details
Pin Count :
4
JESD-30 Code :
R-PUFM-X4
Number of Pins :
4
Continuous Drain Current (ID) :
39A
Surface Mount :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) :
400 W
Mounting Style :
Chassis Mount
Brand :
IXYS
Minimum Operating Temperature :
- 40 C
Turn-Off Delay Time :
75 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
176A
Transistor Application :
SWITCHING
Product Type :
Discrete Semiconductor Modules
Case Connection :
Isolated
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
39A Tc
Supplier Device Package :
SOT-227B
Base Product Number :
IXFE44
FET Feature :
-
Qualification Status :
Not Qualified
Product Category :
Discrete Semiconductor Modules
Height :
9.65 mm
Fall Time (Typ) :
10 ns
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Element Configuration :
Single
Number of Terminals :
4
Package Shape :
RECTANGULAR
Drain to Source Voltage (Vdss) :
500V
Mounting Type :
Chassis Mount
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Drain Current-Max (Abs) (ID) :
39 A
Mount :
Chassis Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Maximum Operating Temperature :
+ 150 C
Transistor Polarity :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 4mA
Vgs (Max) :
±20V
Manufacturer :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Channels :
1 Channel
Number of Terminations :
4
Datasheets
IXFE44N50QD2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE44N50QD2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Package / Case:SOT-227-4, miniBLOC, Number of Pins:4, Mounting Type:Chassis Mount, Number of Channels:1 Channel, Number of Terminations:4, IXFE44N50QD2 pinout, IXFE44N50QD2 datasheet PDF, IXFE44N50QD2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE44N50QD2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE44N50QD2


N-Channel Tube 120m Ω @ 22A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC

IXFE44N50QD2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8000pF @ 25V.This device has a continuous drain current (ID) of [39A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 39 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 176A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFE44N50QD2 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a 500V drain to source voltage (Vdss)


IXFE44N50QD2 Applications


There are a lot of IXYS
IXFE44N50QD2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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