IXFE50N50
- Mfr.Part #
- IXFE50N50
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 47A SOT227B
- Stock
- 32,437
- In Stock :
- 32,437
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- UNSPECIFIED
- Drain to Source Voltage (Vdss) :
- 500V
- Package Shape :
- RECTANGULAR
- RoHS :
- Compliant
- Power Dissipation-Max :
- 500W Tc
- Rds On Max :
- 100 mΩ
- Input Capacitance :
- 9.4 nF
- Vgs (Max) :
- ±20V
- Base Product Number :
- IXFE50
- Pulsed Drain Current-Max (IDM) :
- 220A
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Pin Count :
- 4
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package :
- Box
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Max Power Dissipation :
- 500 W
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 25A, 10V
- Qualification Status :
- Not Qualified
- Power Dissipation-Max (Abs) :
- 500 W
- Min Operating Temperature :
- -40 °C
- Mounting Type :
- Chassis Mount
- Packaging :
- Bulk
- Power Dissipation (Max) :
- 500W (Tc)
- Package / Case :
- SOT-227-4, miniBLOC
- Drain to Source Resistance :
- 100 mΩ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 500W
- Manufacturer :
- IXYS Corporation
- Turn-Off Delay Time :
- 120 ns
- Surface Mount :
- No
- Rise Time :
- 60ns
- Reach Compliance Code :
- Compliant
- DS Breakdown Voltage-Min :
- 500 V
- Drain to Source Breakdown Voltage :
- 500V
- Operating Temperature :
- -40°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 47A Tc
- Number of Terminations :
- 4
- Published :
- 2003
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 53A
- Max Operating Temperature :
- 150 °C
- Terminal Position :
- UPPER
- Pbfree Code :
- yes
- Number of Pins :
- 4
- Drain-source On Resistance-Max :
- 0.1Ohm
- Series :
- HiPerFET™
- Number of Terminals :
- 4
- JESD-30 Code :
- R-PUFM-X4
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Status :
- Active
- Gate Charge (Qg) (Max) @ Vgs :
- 330nC @ 10V
- Case Connection :
- Isolated
- Polarity/Channel Type :
- N-Channel
- Fall Time (Typ) :
- 45 ns
- Mount :
- Chassis Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 50A
- Supplier Device Package :
- SOT-227B
- FET Type :
- N-Channel
- FET Feature :
- --
- Datasheets
- IXFE50N50
IXFE50N50 Documents

N-Channel Bulk 100m Ω @ 25A, 10V ±20V 9400pF @ 25V 330nC @ 10V 500V SOT-227-4, miniBLOC
IXFE50N50 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 9400pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 50A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [53A] according to its drain current.It is [120 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 220A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 100 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFE50N50 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 220A.
single MOSFETs transistor is 100 mΩ
a 500V drain to source voltage (Vdss)
IXFE50N50 Applications
There are a lot of IXYS
IXFE50N50 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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