IXFE50N50
- Mfr.Part #
- IXFE50N50
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 47A SOT227B
- Stock
- 32,437
- In Stock :
- 32,437
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 120 ns
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.1Ohm
- RoHS :
- Compliant
- Pulsed Drain Current-Max (IDM) :
- 220A
- Rise Time :
- 60ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 4
- Max Power Dissipation :
- 500 W
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- Isolated
- Base Product Number :
- IXFE50
- Current - Continuous Drain (Id) @ 25°C :
- 47A Tc
- Mount :
- Chassis Mount
- Drain Current-Max (Abs) (ID) :
- 53A
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -40°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance :
- 9.4 nF
- Power Dissipation (Max) :
- 500W (Tc)
- Number of Pins :
- 4
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Status :
- Active
- Gate Charge (Qg) (Max) @ Vgs :
- 330nC @ 10V
- Min Operating Temperature :
- -40 °C
- Pbfree Code :
- yes
- Power Dissipation :
- 500W
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 45 ns
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 500V
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 25A, 10V
- Drain to Source Resistance :
- 100 mΩ
- Terminal Position :
- UPPER
- Drain to Source Breakdown Voltage :
- 500V
- Power Dissipation-Max (Abs) :
- 500 W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Package :
- Box
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- UNSPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- HiPerFET™
- Gate to Source Voltage (Vgs) :
- 20V
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Bulk
- Package / Case :
- SOT-227-4, miniBLOC
- Rds On Max :
- 100 mΩ
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 500W Tc
- Qualification Status :
- Not Qualified
- Package Shape :
- RECTANGULAR
- Continuous Drain Current (ID) :
- 50A
- FET Feature :
- --
- Mounting Type :
- Chassis Mount
- Manufacturer :
- IXYS Corporation
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 500 V
- Supplier Device Package :
- SOT-227B
- Number of Terminations :
- 4
- Pin Count :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Published :
- 2003
- Max Operating Temperature :
- 150 °C
- JESD-30 Code :
- R-PUFM-X4
- Datasheets
- IXFE50N50

N-Channel Bulk 100m Ω @ 25A, 10V ±20V 9400pF @ 25V 330nC @ 10V 500V SOT-227-4, miniBLOC
IXFE50N50 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 9400pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 50A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [53A] according to its drain current.It is [120 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 220A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 100 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFE50N50 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 220A.
single MOSFETs transistor is 100 mΩ
a 500V drain to source voltage (Vdss)
IXFE50N50 Applications
There are a lot of IXYS
IXFE50N50 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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