IXFE50N50

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Mfr.Part #
IXFE50N50
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 47A SOT227B
Stock
32,437
In Stock :
32,437

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
500W
Transistor Application :
SWITCHING
Number of Terminations :
4
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
50A
Reach Compliance Code :
Compliant
Mount :
Chassis Mount
Vgs (Max) :
±20V
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Drain to Source Voltage (Vdss) :
500V
Power Dissipation-Max (Abs) :
500 W
Power Dissipation (Max) :
500W (Tc)
Current - Continuous Drain (Id) @ 25°C :
47A Tc
Series :
HiPerFET™
Surface Mount :
No
Terminal Position :
UPPER
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
UNSPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
330nC @ 10V
Power Dissipation-Max :
500W Tc
Drain Current-Max (Abs) (ID) :
53A
RoHS :
Compliant
Drain to Source Resistance :
100 mΩ
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
DS Breakdown Voltage-Min :
500 V
Pin Count :
4
Max Operating Temperature :
150 °C
Base Product Number :
IXFE50
Fall Time (Typ) :
45 ns
Rise Time :
60ns
Transistor Element Material :
SILICON
Mounting Type :
Chassis Mount
RoHS Status :
ROHS3 Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
Isolated
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
120 ns
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Packaging :
Bulk
Published :
2003
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Supplier Device Package :
SOT-227B
Min Operating Temperature :
-40 °C
FET Type :
N-Channel
Rds On Max :
100 mΩ
Product Status :
Active
Package / Case :
SOT-227-4, miniBLOC
JESD-30 Code :
R-PUFM-X4
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
20V
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
220A
Package :
Box
Operating Temperature :
-40°C~150°C TJ
Max Power Dissipation :
500 W
Number of Pins :
4
Number of Terminals :
4
Qualification Status :
Not Qualified
Package Shape :
RECTANGULAR
Input Capacitance :
9.4 nF
Drain to Source Breakdown Voltage :
500V
Rds On (Max) @ Id, Vgs :
100m Ω @ 25A, 10V
Manufacturer :
IXYS Corporation
Drain-source On Resistance-Max :
0.1Ohm
Datasheets
IXFE50N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE50N50 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, Operating Temperature:-40°C~150°C TJ, Number of Pins:4, IXFE50N50 pinout, IXFE50N50 datasheet PDF, IXFE50N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE50N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE50N50


N-Channel Bulk 100m Ω @ 25A, 10V ±20V 9400pF @ 25V 330nC @ 10V 500V SOT-227-4, miniBLOC

IXFE50N50 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 9400pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 50A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [53A] according to its drain current.It is [120 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 220A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 100 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFE50N50 Features


a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 220A.
single MOSFETs transistor is 100 mΩ
a 500V drain to source voltage (Vdss)


IXFE50N50 Applications


There are a lot of IXYS
IXFE50N50 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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