IXFE50N50

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Mfr.Part #
IXFE50N50
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 47A SOT227B
Stock
32,437
In Stock :
32,437

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Min Operating Temperature :
-40 °C
Drain-source On Resistance-Max :
0.1Ohm
Product Status :
Active
Base Product Number :
IXFE50
Max Operating Temperature :
150 °C
Surface Mount :
No
Number of Terminals :
4
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Packaging :
Bulk
Fall Time (Typ) :
45 ns
Reach Compliance Code :
Compliant
Turn-Off Delay Time :
120 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2003
DS Breakdown Voltage-Min :
500 V
Rise Time :
60ns
RoHS :
Compliant
Power Dissipation-Max (Abs) :
500 W
Mounting Type :
Chassis Mount
Terminal Position :
UPPER
Manufacturer :
IXYS Corporation
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Power Dissipation :
500W
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Chassis Mount
RoHS Status :
ROHS3 Compliant
Rds On Max :
100 mΩ
Input Capacitance :
9.4 nF
Pulsed Drain Current-Max (IDM) :
220A
Pin Count :
4
Current - Continuous Drain (Id) @ 25°C :
47A Tc
Drain Current-Max (Abs) (ID) :
53A
Max Power Dissipation :
500 W
Power Dissipation-Max :
500W Tc
Operating Temperature :
-40°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
4
Drain to Source Resistance :
100 mΩ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Number of Elements :
1
Case Connection :
Isolated
Package Shape :
RECTANGULAR
Package :
Box
Series :
HiPerFET™
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
Rds On (Max) @ Id, Vgs :
100m Ω @ 25A, 10V
FET Type :
N-Channel
Transistor Application :
SWITCHING
Power Dissipation (Max) :
500W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
330nC @ 10V
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
50A
Terminal Form :
UNSPECIFIED
JESD-30 Code :
R-PUFM-X4
Qualification Status :
Not Qualified
Supplier Device Package :
SOT-227B
Number of Pins :
4
Drain to Source Breakdown Voltage :
500V
Package / Case :
SOT-227-4, miniBLOC
FET Feature :
--
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
500V
Datasheets
IXFE50N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE50N50 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Operating Temperature:-40°C~150°C TJ, Number of Terminations:4, Number of Pins:4, Package / Case:SOT-227-4, miniBLOC, IXFE50N50 pinout, IXFE50N50 datasheet PDF, IXFE50N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE50N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE50N50


N-Channel Bulk 100m Ω @ 25A, 10V ±20V 9400pF @ 25V 330nC @ 10V 500V SOT-227-4, miniBLOC

IXFE50N50 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 9400pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 50A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [53A] according to its drain current.It is [120 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 220A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 100 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFE50N50 Features


a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 220A.
single MOSFETs transistor is 100 mΩ
a 500V drain to source voltage (Vdss)


IXFE50N50 Applications


There are a lot of IXYS
IXFE50N50 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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