IXFE36N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

580W

Package / Case :

SOT-227-4, miniBLOC

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

1000 V

Pin Count :

4

Series :

HiPerFET™

Drain-source On Resistance-Max :

0.24 Ω

Rise Time :

82ns

Product Status :

Obsolete

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Case Connection :

Isolated

Supplier Device Package :

SOT-227B

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1 Channel

Terminal Form :

UNSPECIFIED

Maximum Operating Temperature :

+ 150 C

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount

Brand :

IXYS

Power Dissipation (Max) :

580W (Tc)

JESD-30 Code :

R-PUFM-X4

Fall Time (Typ) :

40 ns

Height :

9.65 mm

Mount :

Chassis Mount

Input Capacitance (Ciss) (Max) @ Vds :

15000pF @ 25V

Drain Current-Max (Abs) (ID) :

33 A

Published :

2003

Gate Charge (Qg) (Max) @ Vgs :

455nC @ 10V

Number of Terminations :

4

Drain to Source Breakdown Voltage :

1kV

Continuous Drain Current (ID) :

33A

Surface Mount :

No

Length :

38.23 mm

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Width :

25.42 mm

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Reach Compliance Code :

Compliant

Product :

Power MOSFET Modules

Number of Terminals :

4

FET Feature :

--

Product Type :

Discrete Semiconductor Modules

Product Category :

Discrete Semiconductor Modules

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

144 A

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

240m Ω @ 18A, 10V

Power Dissipation-Max :

580W Tc

Drain to Source Voltage (Vdss) :

1000V

Mounting Style :

Chassis Mount

Number of Pins :

4

Minimum Operating Temperature :

- 55 C

Configuration :

SINGLE WITH BUILT-IN DIODE

Package :

Tube

Additional Feature :

AVALANCHE RATED

Base Product Number :

IXFE36

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

4000 mJ

Power Dissipation-Max (Abs) :

580 W

Turn-Off Delay Time :

150 ns

Transistor Polarity :

N-Channel

Terminal Position :

UPPER

RoHS :

Details

Drive Voltage (Max Rds On,Min Rds On) :

10V

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR