IXFE24N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Tradename :

HyperFET

Fall Time (Typ) :

21 ns

Polarity/Channel Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Minimum Operating Temperature :

- 55 C

Product Type :

Discrete Semiconductor Modules

Avalanche Energy Rating (Eas) :

3000 mJ

Power Dissipation :

500W

Number of Terminations :

4

RoHS Status :

RoHS Compliant

Height :

9.65 mm

Input Capacitance :

7 nF

Transistor Element Material :

SILICON

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS :

Compliant

Manufacturer :

IXYS

Continuous Drain Current (ID) :

22A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Chassis Mount

Turn-Off Delay Time :

75 ns

Max Power Dissipation :

500 W

Base Product Number :

IXFE24

Transistor Application :

SWITCHING

Drain to Source Resistance :

390 mΩ

Product :

Power MOSFET Modules

Drain Current-Max (Abs) (ID) :

22 A

Package / Case :

SOT-227-4, miniBLOC

Terminal Position :

UPPER

Max Operating Temperature :

150 °C

Drain to Source Voltage (Vdss) :

1000V

Power Dissipation-Max :

500W Tc

Length :

38.23 mm

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

1000 V

Product Category :

Discrete Semiconductor Modules

FET Feature :

--

Maximum Operating Temperature :

+ 150 C

Width :

25.42 mm

Pulsed Drain Current-Max (IDM) :

96A

Drain-source On Resistance-Max :

0.39Ohm

Qualification Status :

Not Qualified

Pin Count :

4

Packaging :

Tube

Min Operating Temperature :

-55 °C

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Number of Pins :

4

Number of Terminals :

4

Power Dissipation (Max) :

500W (Tc)

Published :

2002

Number of Channels :

1 Channel

Power Dissipation-Max (Abs) :

500 W

Surface Mount :

No

Transistor Polarity :

N-Channel

Terminal Form :

UNSPECIFIED

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 8mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

1kV

Rds On Max :

390 mΩ

Brand :

IXYS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

390m Ω @ 12A, 10V

Package :

Tube

Product Status :

Obsolete

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Chassis Mount

Pbfree Code :

yes

Mounting Style :

Chassis Mount

Package Shape :

RECTANGULAR

Rise Time :

35ns

Reach Compliance Code :

Compliant

Supplier Device Package :

SOT-227B

Series :

HiPerFET™

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

JESD-30 Code :

R-PUFM-X4

Current - Continuous Drain (Id) @ 25°C :

22A Tc