IXFE23N100

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Mfr.Part #
IXFE23N100
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 1000V 21A SOT227B
Stock
34,331
In Stock :
34,331

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Pin Count :
4
Package / Case :
SOT-227-4, miniBLOC
Series :
HiPerFET™
Power Dissipation-Max (Abs) :
500 W
Qualification Status :
Not Qualified
Rise Time :
35ns
Avalanche Energy Rating (Eas) :
3000 mJ
Manufacturer :
IXYS Corporation
Rds On (Max) @ Id, Vgs :
430m Ω @ 11.5A, 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Base Product Number :
IXFE23
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
0.43 Ω
Packaging :
Tube
Pbfree Code :
yes
Power Dissipation :
500W
Terminal Form :
UNSPECIFIED
FET Feature :
--
Package :
Box
Power Dissipation-Max :
500W Tc
Operating Temperature :
-55°C~150°C TJ
Published :
2002
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Drain to Source Breakdown Voltage :
1kV
Reach Compliance Code :
Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Mount :
Chassis Mount
Surface Mount :
No
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain Current-Max (Abs) (ID) :
21 A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
Isolated
Turn-Off Delay Time :
75 ns
Terminal Position :
UPPER
Transistor Application :
SWITCHING
Supplier Device Package :
SOT-227B
Fall Time (Typ) :
21 ns
Continuous Drain Current (ID) :
21A
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
1000V
Vgs (Max) :
±20V
Polarity/Channel Type :
N-Channel
Number of Elements :
1
JESD-30 Code :
R-PUFM-X4
Pulsed Drain Current-Max (IDM) :
92A
DS Breakdown Voltage-Min :
1000 V
RoHS Status :
ROHS3 Compliant
Package Shape :
RECTANGULAR
Number of Terminations :
4
Mounting Type :
Chassis Mount
Product Status :
Active
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
5V @ 8mA
Power Dissipation (Max) :
500W (Tc)
Number of Pins :
4
Current - Continuous Drain (Id) @ 25°C :
21A Tc
Number of Terminals :
4
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
IXFE23N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE23N100 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-227-4, miniBLOC, Operating Temperature:-55°C~150°C TJ, Number of Terminations:4, Mounting Type:Chassis Mount, Number of Pins:4, IXFE23N100 pinout, IXFE23N100 datasheet PDF, IXFE23N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE23N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE23N100


N-Channel Tube 430m Ω @ 11.5A, 10V ±20V 7000pF @ 25V 250nC @ 10V 1000V SOT-227-4, miniBLOC

IXFE23N100 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 21A amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [21 A] according to its drain current.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 92A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFE23N100 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 92A.
a 1000V drain to source voltage (Vdss)


IXFE23N100 Applications


There are a lot of IXYS
IXFE23N100 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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