IXFE23N100
- Mfr.Part #
- IXFE23N100
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 21A SOT227B
- Stock
- 34,331
- In Stock :
- 34,331
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Manufacturer :
- IXYS Corporation
- DS Breakdown Voltage-Min :
- 1000 V
- Continuous Drain Current (ID) :
- 21A
- Turn-Off Delay Time :
- 75 ns
- Terminal Form :
- UNSPECIFIED
- Drain-source On Resistance-Max :
- 0.43 Ω
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- Drain to Source Breakdown Voltage :
- 1kV
- Number of Elements :
- 1
- Series :
- HiPerFET™
- Package Shape :
- RECTANGULAR
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminals :
- 4
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 430m Ω @ 11.5A, 10V
- Drain to Source Voltage (Vdss) :
- 1000V
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Feature :
- --
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 500W Tc
- Fall Time (Typ) :
- 21 ns
- Published :
- 2002
- Surface Mount :
- No
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- FET Type :
- N-Channel
- Product Status :
- Active
- Package / Case :
- SOT-227-4, miniBLOC
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- UPPER
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Mounting Type :
- Chassis Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 7000pF @ 25V
- Power Dissipation (Max) :
- 500W (Tc)
- Rise Time :
- 35ns
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 92A
- Number of Terminations :
- 4
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Package :
- Box
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max (Abs) :
- 500 W
- Pin Count :
- 4
- JESD-30 Code :
- R-PUFM-X4
- Drain Current-Max (Abs) (ID) :
- 21 A
- Mount :
- Chassis Mount
- Base Product Number :
- IXFE23
- Number of Pins :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- SOT-227B
- Case Connection :
- Isolated
- Power Dissipation :
- 500W
- Datasheets
- IXFE23N100

N-Channel Tube 430m Ω @ 11.5A, 10V ±20V 7000pF @ 25V 250nC @ 10V 1000V SOT-227-4, miniBLOC
IXFE23N100 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 21A amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [21 A] according to its drain current.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 92A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFE23N100 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 92A.
a 1000V drain to source voltage (Vdss)
IXFE23N100 Applications
There are a lot of IXYS
IXFE23N100 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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