IXFE23N100

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Mfr.Part #
IXFE23N100
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 1000V 21A SOT227B
Stock
34,331
In Stock :
34,331

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Manufacturer :
IXYS Corporation
DS Breakdown Voltage-Min :
1000 V
Continuous Drain Current (ID) :
21A
Turn-Off Delay Time :
75 ns
Terminal Form :
UNSPECIFIED
Drain-source On Resistance-Max :
0.43 Ω
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Drain to Source Breakdown Voltage :
1kV
Number of Elements :
1
Series :
HiPerFET™
Package Shape :
RECTANGULAR
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminals :
4
Vgs (Max) :
±20V
Reach Compliance Code :
Compliant
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
430m Ω @ 11.5A, 10V
Drain to Source Voltage (Vdss) :
1000V
Gate to Source Voltage (Vgs) :
20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Feature :
--
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max :
500W Tc
Fall Time (Typ) :
21 ns
Published :
2002
Surface Mount :
No
Avalanche Energy Rating (Eas) :
3000 mJ
FET Type :
N-Channel
Product Status :
Active
Package / Case :
SOT-227-4, miniBLOC
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
UPPER
Current - Continuous Drain (Id) @ 25°C :
21A Tc
Vgs(th) (Max) @ Id :
5V @ 8mA
Mounting Type :
Chassis Mount
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Power Dissipation (Max) :
500W (Tc)
Rise Time :
35ns
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
92A
Number of Terminations :
4
Transistor Application :
SWITCHING
Packaging :
Tube
Package :
Box
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max (Abs) :
500 W
Pin Count :
4
JESD-30 Code :
R-PUFM-X4
Drain Current-Max (Abs) (ID) :
21 A
Mount :
Chassis Mount
Base Product Number :
IXFE23
Number of Pins :
4
Drive Voltage (Max Rds On,Min Rds On) :
10V
Supplier Device Package :
SOT-227B
Case Connection :
Isolated
Power Dissipation :
500W
Datasheets
IXFE23N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE23N100 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-227-4, miniBLOC, Operating Temperature:-55°C~150°C TJ, Mounting Type:Chassis Mount, Number of Terminations:4, Number of Pins:4, IXFE23N100 pinout, IXFE23N100 datasheet PDF, IXFE23N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE23N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE23N100


N-Channel Tube 430m Ω @ 11.5A, 10V ±20V 7000pF @ 25V 250nC @ 10V 1000V SOT-227-4, miniBLOC

IXFE23N100 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 21A amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [21 A] according to its drain current.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 92A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFE23N100 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 92A.
a 1000V drain to source voltage (Vdss)


IXFE23N100 Applications


There are a lot of IXYS
IXFE23N100 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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