IXFE23N100
- Mfr.Part #
- IXFE23N100
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 21A SOT227B
- Stock
- 34,331
- In Stock :
- 34,331
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- Case Connection :
- Isolated
- Power Dissipation :
- 500W
- Input Capacitance (Ciss) (Max) @ Vds :
- 7000pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 92A
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Terminal Position :
- UPPER
- Package Shape :
- RECTANGULAR
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- SOT-227B
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminals :
- 4
- Number of Pins :
- 4
- Gate to Source Voltage (Vgs) :
- 20V
- Base Product Number :
- IXFE23
- Polarity/Channel Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Number of Terminations :
- 4
- Power Dissipation (Max) :
- 500W (Tc)
- Published :
- 2002
- Mount :
- Chassis Mount
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 21A
- Terminal Form :
- UNSPECIFIED
- Rds On (Max) @ Id, Vgs :
- 430m Ω @ 11.5A, 10V
- FET Type :
- N-Channel
- Rise Time :
- 35ns
- DS Breakdown Voltage-Min :
- 1000 V
- Fall Time (Typ) :
- 21 ns
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Manufacturer :
- IXYS Corporation
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 1000V
- Turn-Off Delay Time :
- 75 ns
- Drain to Source Breakdown Voltage :
- 1kV
- Mounting Type :
- Chassis Mount
- Drain Current-Max (Abs) (ID) :
- 21 A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±20V
- Package / Case :
- SOT-227-4, miniBLOC
- Series :
- HiPerFET™
- FET Feature :
- --
- JESD-30 Code :
- R-PUFM-X4
- Power Dissipation-Max :
- 500W Tc
- Power Dissipation-Max (Abs) :
- 500 W
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Pin Count :
- 4
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.43 Ω
- Package :
- Box
- Reach Compliance Code :
- Compliant
- Datasheets
- IXFE23N100

N-Channel Tube 430m Ω @ 11.5A, 10V ±20V 7000pF @ 25V 250nC @ 10V 1000V SOT-227-4, miniBLOC
IXFE23N100 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 21A amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [21 A] according to its drain current.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 92A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFE23N100 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 92A.
a 1000V drain to source voltage (Vdss)
IXFE23N100 Applications
There are a lot of IXYS
IXFE23N100 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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