IXFE23N100
- Mfr.Part #
- IXFE23N100
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 21A SOT227B
- Stock
- 34,331
- In Stock :
- 34,331
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HiPerFET™
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- Manufacturer :
- IXYS Corporation
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 4
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Surface Mount :
- No
- Fall Time (Typ) :
- 21 ns
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.43 Ω
- Package :
- Box
- Supplier Device Package :
- SOT-227B
- Product Status :
- Active
- Drain to Source Breakdown Voltage :
- 1kV
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 430m Ω @ 11.5A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 500W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 21 A
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 500W
- JESD-30 Code :
- R-PUFM-X4
- FET Feature :
- --
- Mount :
- Chassis Mount
- Continuous Drain Current (ID) :
- 21A
- Number of Pins :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminals :
- 4
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Package / Case :
- SOT-227-4, miniBLOC
- Pulsed Drain Current-Max (IDM) :
- 92A
- Drain to Source Voltage (Vdss) :
- 1000V
- Base Product Number :
- IXFE23
- DS Breakdown Voltage-Min :
- 1000 V
- Mounting Type :
- Chassis Mount
- FET Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 500 W
- Number of Elements :
- 1
- Reach Compliance Code :
- Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 7000pF @ 25V
- Turn-Off Delay Time :
- 75 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 4
- Published :
- 2002
- Case Connection :
- Isolated
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Rise Time :
- 35ns
- Transistor Element Material :
- SILICON
- Terminal Form :
- UNSPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Power Dissipation (Max) :
- 500W (Tc)
- Terminal Position :
- UPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IXFE23N100

N-Channel Tube 430m Ω @ 11.5A, 10V ±20V 7000pF @ 25V 250nC @ 10V 1000V SOT-227-4, miniBLOC
IXFE23N100 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 21A amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [21 A] according to its drain current.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 92A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFE23N100 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 92A.
a 1000V drain to source voltage (Vdss)
IXFE23N100 Applications
There are a lot of IXYS
IXFE23N100 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
















