IXFE48N50QD2

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Mfr.Part #
IXFE48N50QD2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 41A SOT-227B
Stock
7,466
In Stock :
7,466

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Vgs(th) (Max) @ Id :
4V @ 4mA
Additional Feature :
AVALANCHE RATED
Pin Count :
4
Drain-source On Resistance-Max :
0.11Ohm
Pulsed Drain Current-Max (IDM) :
192A
Drain Current-Max (Abs) (ID) :
41 A
Power Dissipation-Max (Abs) :
400 W
Base Product Number :
IXFE48
Case Connection :
Isolated
Supplier Device Package :
SOT-227B
Drain to Source Breakdown Voltage :
500V
Number of Terminations :
4
Avalanche Energy Rating (Eas) :
2500 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Terminal Form :
UNSPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
Rds On (Max) @ Id, Vgs :
110m Ω @ 24A, 10V
Turn-Off Delay Time :
75 ns
Product Type :
Discrete Semiconductor Modules
Product Category :
Discrete Semiconductor Modules
Current - Continuous Drain (Id) @ 25°C :
41A Tc
Surface Mount :
No
Product :
Power MOSFET Modules
Rise Time :
22ns
Package :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
41A
FET Feature :
--
Transistor Polarity :
N-Channel
Minimum Operating Temperature :
- 40 C
Transistor Element Material :
SILICON
Product Status :
Active
Drain to Source Voltage (Vdss) :
500V
DS Breakdown Voltage-Min :
500 V
Series :
HiPerFET™
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Fall Time (Typ) :
10 ns
Brand :
IXYS
Package / Case :
SOT-227-4, miniBLOC
Mounting Type :
Chassis Mount
Number of Channels :
1 Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Type :
N-Channel
Width :
25.42 mm
Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Style :
Chassis Mount
Polarity/Channel Type :
N-Channel
Terminal Position :
UPPER
Gate to Source Voltage (Vgs) :
20V
Reach Compliance Code :
Compliant
Vgs (Max) :
±20V
Published :
2004
Mount :
Chassis Mount
Maximum Operating Temperature :
+ 150 C
Operating Temperature :
-40°C~150°C TJ
Length :
38.23 mm
Qualification Status :
Not Qualified
Power Dissipation :
400W
Transistor Application :
SWITCHING
Element Configuration :
Single
Pbfree Code :
yes
Power Dissipation (Max) :
400W (Tc)
RoHS :
Details
Number of Terminals :
4
Number of Pins :
4
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
400W Tc
Manufacturer :
IXYS
Package Shape :
RECTANGULAR
JESD-30 Code :
R-PUFM-X4
Height :
9.65 mm
Datasheets
IXFE48N50QD2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE48N50QD2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, Mounting Type:Chassis Mount, Number of Channels:1 Channel, Operating Temperature:-40°C~150°C TJ, Number of Pins:4, IXFE48N50QD2 pinout, IXFE48N50QD2 datasheet PDF, IXFE48N50QD2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE48N50QD2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE48N50QD2


N-Channel Tube 110m Ω @ 24A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC

IXFE48N50QD2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8000pF @ 25V.This device has a continuous drain current (ID) of [41A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 41 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 192A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFE48N50QD2 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 192A.
a 500V drain to source voltage (Vdss)


IXFE48N50QD2 Applications


There are a lot of IXYS
IXFE48N50QD2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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