IXFE48N50QD2
- Mfr.Part #
- IXFE48N50QD2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 41A SOT-227B
- Stock
- 7,466
- In Stock :
- 7,466
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Style :
- Chassis Mount
- Number of Channels :
- 1 Channel
- Product Type :
- Discrete Semiconductor Modules
- Surface Mount :
- No
- Height :
- 9.65 mm
- Number of Terminals :
- 4
- Power Dissipation (Max) :
- 400W (Tc)
- Supplier Device Package :
- SOT-227B
- Number of Elements :
- 1
- Case Connection :
- Isolated
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Current-Max (IDM) :
- 192A
- Rise Time :
- 22ns
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- Number of Terminations :
- 4
- Product Status :
- Active
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max :
- 400W Tc
- Number of Pins :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Operating Temperature :
- -40°C~150°C TJ
- Power Dissipation-Max (Abs) :
- 400 W
- Fall Time (Typ) :
- 10 ns
- Width :
- 25.42 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 41 A
- Terminal Position :
- UPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Packaging :
- Tube
- Length :
- 38.23 mm
- Mounting Type :
- Chassis Mount
- Drain to Source Breakdown Voltage :
- 500V
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Series :
- HiPerFET™
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Mount :
- Chassis Mount
- Product Category :
- Discrete Semiconductor Modules
- Pin Count :
- 4
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Base Product Number :
- IXFE48
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 24A, 10V
- Power Dissipation :
- 400W
- Manufacturer :
- IXYS
- Product :
- Power MOSFET Modules
- Continuous Drain Current (ID) :
- 41A
- DS Breakdown Voltage-Min :
- 500 V
- RoHS :
- Details
- Minimum Operating Temperature :
- - 40 C
- Polarity/Channel Type :
- N-Channel
- Turn-Off Delay Time :
- 75 ns
- JESD-30 Code :
- R-PUFM-X4
- Drain to Source Voltage (Vdss) :
- 500V
- Reach Compliance Code :
- Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Polarity :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.11Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 8000pF @ 25V
- Package :
- Tube
- Package / Case :
- SOT-227-4, miniBLOC
- Maximum Operating Temperature :
- + 150 C
- Terminal Form :
- UNSPECIFIED
- Brand :
- IXYS
- Published :
- 2004
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- FET Type :
- N-Channel
- FET Feature :
- --
- Datasheets
- IXFE48N50QD2

N-Channel Tube 110m Ω @ 24A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC
IXFE48N50QD2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8000pF @ 25V.This device has a continuous drain current (ID) of [41A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 41 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 192A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFE48N50QD2 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 192A.
a 500V drain to source voltage (Vdss)
IXFE48N50QD2 Applications
There are a lot of IXYS
IXFE48N50QD2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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