IXFE48N50QD2
- Mfr.Part #
- IXFE48N50QD2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 41A SOT-227B
- Stock
- 7,466
- In Stock :
- 7,466
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- Single
- Number of Terminations :
- 4
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Maximum Operating Temperature :
- + 150 C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Length :
- 38.23 mm
- Product Status :
- Active
- Power Dissipation-Max (Abs) :
- 400 W
- Drain-source On Resistance-Max :
- 0.11Ohm
- Drain to Source Voltage (Vdss) :
- 500V
- Reach Compliance Code :
- Compliant
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 24A, 10V
- Minimum Operating Temperature :
- - 40 C
- Pbfree Code :
- yes
- Number of Channels :
- 1 Channel
- Pulsed Drain Current-Max (IDM) :
- 192A
- Pin Count :
- 4
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Published :
- 2004
- Transistor Element Material :
- SILICON
- Rise Time :
- 22ns
- Product Type :
- Discrete Semiconductor Modules
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- JESD-30 Code :
- R-PUFM-X4
- Transistor Polarity :
- N-Channel
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- DS Breakdown Voltage-Min :
- 500 V
- Number of Terminals :
- 4
- Package / Case :
- SOT-227-4, miniBLOC
- Power Dissipation-Max :
- 400W Tc
- Surface Mount :
- No
- Mounting Type :
- Chassis Mount
- Package :
- Tube
- Terminal Form :
- UNSPECIFIED
- Turn-Off Delay Time :
- 75 ns
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- Terminal Position :
- UPPER
- Drain Current-Max (Abs) (ID) :
- 41 A
- RoHS :
- Details
- Case Connection :
- Isolated
- Input Capacitance (Ciss) (Max) @ Vds :
- 8000pF @ 25V
- Power Dissipation :
- 400W
- Package Shape :
- RECTANGULAR
- Packaging :
- Tube
- Supplier Device Package :
- SOT-227B
- Drain to Source Breakdown Voltage :
- 500V
- Mount :
- Chassis Mount
- Operating Temperature :
- -40°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 41A
- Fall Time (Typ) :
- 10 ns
- Series :
- HiPerFET™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Style :
- Chassis Mount
- FET Feature :
- --
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 400W (Tc)
- Height :
- 9.65 mm
- Width :
- 25.42 mm
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Product Category :
- Discrete Semiconductor Modules
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- FET Type :
- N-Channel
- Brand :
- IXYS
- Base Product Number :
- IXFE48
- Manufacturer :
- IXYS
- Transistor Application :
- SWITCHING
- Product :
- Power MOSFET Modules
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Datasheets
- IXFE48N50QD2

N-Channel Tube 110m Ω @ 24A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC
IXFE48N50QD2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8000pF @ 25V.This device has a continuous drain current (ID) of [41A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 41 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 192A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFE48N50QD2 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 192A.
a 500V drain to source voltage (Vdss)
IXFE48N50QD2 Applications
There are a lot of IXYS
IXFE48N50QD2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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