IXFE48N50QD2

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Mfr.Part #
IXFE48N50QD2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 41A SOT-227B
Stock
7,466
In Stock :
7,466

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
38.23 mm
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
Number of Channels :
1 Channel
Product Type :
Discrete Semiconductor Modules
Drain to Source Breakdown Voltage :
500V
Power Dissipation :
400W
Published :
2004
Width :
25.42 mm
Operating Temperature :
-40°C~150°C TJ
Number of Pins :
4
Transistor Polarity :
N-Channel
Package :
Tube
Supplier Device Package :
SOT-227B
Height :
9.65 mm
FET Feature :
--
Brand :
IXYS
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Drain Current-Max (Abs) (ID) :
41 A
Rise Time :
22ns
Terminal Form :
UNSPECIFIED
Continuous Drain Current (ID) :
41A
Pbfree Code :
yes
Maximum Operating Temperature :
+ 150 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Series :
HiPerFET™
Configuration :
Single
Mount :
Chassis Mount
Rds On (Max) @ Id, Vgs :
110m Ω @ 24A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Avalanche Energy Rating (Eas) :
2500 mJ
Drain to Source Voltage (Vdss) :
500V
JESD-30 Code :
R-PUFM-X4
Power Dissipation-Max (Abs) :
400 W
Case Connection :
Isolated
Product Status :
Active
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Elements :
1
Turn-Off Delay Time :
75 ns
Package / Case :
SOT-227-4, miniBLOC
Number of Terminals :
4
Power Dissipation (Max) :
400W (Tc)
Drain-source On Resistance-Max :
0.11Ohm
Manufacturer :
IXYS
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
4V @ 4mA
Power Dissipation-Max :
400W Tc
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
41A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
4
Polarity/Channel Type :
N-Channel
Minimum Operating Temperature :
- 40 C
Terminal Position :
UPPER
FET Type :
N-Channel
Vgs (Max) :
±20V
Fall Time (Typ) :
10 ns
Base Product Number :
IXFE48
Surface Mount :
No
Element Configuration :
Single
Package Shape :
RECTANGULAR
DS Breakdown Voltage-Min :
500 V
Reach Compliance Code :
Compliant
Pulsed Drain Current-Max (IDM) :
192A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS :
Details
Transistor Application :
SWITCHING
Mounting Type :
Chassis Mount
Additional Feature :
AVALANCHE RATED
Operating Mode :
ENHANCEMENT MODE
Product Category :
Discrete Semiconductor Modules
Gate to Source Voltage (Vgs) :
20V
Product :
Power MOSFET Modules
Number of Terminations :
4
Mounting Style :
Chassis Mount
Datasheets
IXFE48N50QD2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE48N50QD2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-40°C~150°C TJ, Number of Pins:4, Package / Case:SOT-227-4, miniBLOC, Mounting Type:Chassis Mount, Number of Terminations:4, IXFE48N50QD2 pinout, IXFE48N50QD2 datasheet PDF, IXFE48N50QD2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE48N50QD2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE48N50QD2


N-Channel Tube 110m Ω @ 24A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC

IXFE48N50QD2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8000pF @ 25V.This device has a continuous drain current (ID) of [41A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 41 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 192A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFE48N50QD2 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 192A.
a 500V drain to source voltage (Vdss)


IXFE48N50QD2 Applications


There are a lot of IXYS
IXFE48N50QD2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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