IXFE48N50QD2
- Mfr.Part #
- IXFE48N50QD2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 41A SOT-227B
- Stock
- 7,466
- In Stock :
- 7,466
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 38.23 mm
- Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- Drain-source On Resistance-Max :
- 0.11Ohm
- Element Configuration :
- Single
- Base Product Number :
- IXFE48
- Power Dissipation (Max) :
- 400W (Tc)
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 25.42 mm
- Polarity/Channel Type :
- N-Channel
- Fall Time (Typ) :
- 10 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1 Channel
- Mount :
- Chassis Mount
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- Isolated
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 24A, 10V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 500 V
- FET Feature :
- --
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 4
- Operating Temperature :
- -40°C~150°C TJ
- Package / Case :
- SOT-227-4, miniBLOC
- Mounting Style :
- Chassis Mount
- Product Type :
- Discrete Semiconductor Modules
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Number of Pins :
- 4
- JESD-30 Code :
- R-PUFM-X4
- Surface Mount :
- No
- Pulsed Drain Current-Max (IDM) :
- 192A
- Number of Terminations :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 41A
- Packaging :
- Tube
- Number of Elements :
- 1
- Supplier Device Package :
- SOT-227B
- Terminal Form :
- UNSPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Reach Compliance Code :
- Compliant
- Turn-Off Delay Time :
- 75 ns
- Minimum Operating Temperature :
- - 40 C
- Power Dissipation :
- 400W
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Voltage (Vdss) :
- 500V
- Product Status :
- Active
- Mounting Type :
- Chassis Mount
- Vgs (Max) :
- ±20V
- Product :
- Power MOSFET Modules
- Power Dissipation-Max :
- 400W Tc
- Height :
- 9.65 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- HiPerFET™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 8000pF @ 25V
- Manufacturer :
- IXYS
- RoHS :
- Details
- Rise Time :
- 22ns
- Drain Current-Max (Abs) (ID) :
- 41 A
- Product Category :
- Discrete Semiconductor Modules
- Published :
- 2004
- Pin Count :
- 4
- Terminal Position :
- UPPER
- Drain to Source Breakdown Voltage :
- 500V
- Power Dissipation-Max (Abs) :
- 400 W
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Datasheets
- IXFE48N50QD2

N-Channel Tube 110m Ω @ 24A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC
IXFE48N50QD2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8000pF @ 25V.This device has a continuous drain current (ID) of [41A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 41 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 192A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFE48N50QD2 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 192A.
a 500V drain to source voltage (Vdss)
IXFE48N50QD2 Applications
There are a lot of IXYS
IXFE48N50QD2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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