IXFE48N50QD2
- Mfr.Part #
- IXFE48N50QD2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 41A SOT-227B
- Stock
- 7,466
- In Stock :
- 7,466
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 41 A
- Reach Compliance Code :
- Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- - 40 C
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Package / Case :
- SOT-227-4, miniBLOC
- Power Dissipation (Max) :
- 400W (Tc)
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 500V
- Additional Feature :
- AVALANCHE RATED
- Number of Terminals :
- 4
- JESD-30 Code :
- R-PUFM-X4
- Pulsed Drain Current-Max (IDM) :
- 192A
- FET Feature :
- --
- Operating Mode :
- ENHANCEMENT MODE
- Product Status :
- Active
- Drain-source On Resistance-Max :
- 0.11Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package :
- Tube
- Series :
- HiPerFET™
- Transistor Polarity :
- N-Channel
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 500 V
- Product Type :
- Discrete Semiconductor Modules
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Terminal Position :
- UPPER
- Package Shape :
- RECTANGULAR
- Rise Time :
- 22ns
- Brand :
- IXYS
- Mounting Type :
- Chassis Mount
- Product :
- Power MOSFET Modules
- Gate to Source Voltage (Vgs) :
- 20V
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 75 ns
- Number of Pins :
- 4
- Vgs (Max) :
- ±20V
- Power Dissipation-Max (Abs) :
- 400 W
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Configuration :
- Single
- Maximum Operating Temperature :
- + 150 C
- Width :
- 25.42 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- IXYS
- Number of Channels :
- 1 Channel
- Continuous Drain Current (ID) :
- 41A
- Product Category :
- Discrete Semiconductor Modules
- Published :
- 2004
- Length :
- 38.23 mm
- Power Dissipation :
- 400W
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 24A, 10V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 500V
- Terminal Form :
- UNSPECIFIED
- Mounting Style :
- Chassis Mount
- Height :
- 9.65 mm
- RoHS :
- Details
- Supplier Device Package :
- SOT-227B
- Number of Terminations :
- 4
- Mount :
- Chassis Mount
- Base Product Number :
- IXFE48
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Pin Count :
- 4
- Case Connection :
- Isolated
- Power Dissipation-Max :
- 400W Tc
- Fall Time (Typ) :
- 10 ns
- Operating Temperature :
- -40°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 8000pF @ 25V
- Qualification Status :
- Not Qualified
- Datasheets
- IXFE48N50QD2

N-Channel Tube 110m Ω @ 24A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC
IXFE48N50QD2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8000pF @ 25V.This device has a continuous drain current (ID) of [41A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 41 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 192A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFE48N50QD2 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 192A.
a 500V drain to source voltage (Vdss)
IXFE48N50QD2 Applications
There are a lot of IXYS
IXFE48N50QD2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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