IXFE48N50QD2
- Mfr.Part #
- IXFE48N50QD2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 41A SOT-227B
- Stock
- 7,466
- In Stock :
- 7,466
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- JESD-30 Code :
- R-PUFM-X4
- Mounting Style :
- Chassis Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation (Max) :
- 400W (Tc)
- Width :
- 25.42 mm
- Transistor Polarity :
- N-Channel
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 500V
- Manufacturer :
- IXYS
- Product :
- Power MOSFET Modules
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Power Dissipation-Max :
- 400W Tc
- Terminal Form :
- UNSPECIFIED
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 24A, 10V
- Package / Case :
- SOT-227-4, miniBLOC
- Number of Terminations :
- 4
- Number of Pins :
- 4
- Published :
- 2004
- Power Dissipation :
- 400W
- Product Category :
- Discrete Semiconductor Modules
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Terminal Position :
- UPPER
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 8000pF @ 25V
- Case Connection :
- Isolated
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 192A
- Reach Compliance Code :
- Compliant
- Polarity/Channel Type :
- N-Channel
- Mount :
- Chassis Mount
- Drain Current-Max (Abs) (ID) :
- 41 A
- Operating Temperature :
- -40°C~150°C TJ
- Power Dissipation-Max (Abs) :
- 400 W
- Maximum Operating Temperature :
- + 150 C
- Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Product Type :
- Discrete Semiconductor Modules
- Number of Terminals :
- 4
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- Brand :
- IXYS
- Element Configuration :
- Single
- Product Status :
- Active
- Package :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Package Shape :
- RECTANGULAR
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Continuous Drain Current (ID) :
- 41A
- Surface Mount :
- No
- Drain to Source Voltage (Vdss) :
- 500V
- Supplier Device Package :
- SOT-227B
- Drain-source On Resistance-Max :
- 0.11Ohm
- Transistor Element Material :
- SILICON
- Series :
- HiPerFET™
- Number of Channels :
- 1 Channel
- Rise Time :
- 22ns
- RoHS :
- Details
- Height :
- 9.65 mm
- Minimum Operating Temperature :
- - 40 C
- Turn-Off Delay Time :
- 75 ns
- Mounting Type :
- Chassis Mount
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Product Number :
- IXFE48
- FET Feature :
- --
- Fall Time (Typ) :
- 10 ns
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 500 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Length :
- 38.23 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IXFE48N50QD2

N-Channel Tube 110m Ω @ 24A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC
IXFE48N50QD2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8000pF @ 25V.This device has a continuous drain current (ID) of [41A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 41 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 192A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFE48N50QD2 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 192A.
a 500V drain to source voltage (Vdss)
IXFE48N50QD2 Applications
There are a lot of IXYS
IXFE48N50QD2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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