IXFE48N50QD2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Mount :

Chassis Mount

Turn-Off Delay Time :

75 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Product Category :

Discrete Semiconductor Modules

Terminal Form :

UNSPECIFIED

Maximum Operating Temperature :

+ 150 C

Number of Terminals :

4

Operating Temperature :

-40°C~150°C TJ

Power Dissipation (Max) :

400W (Tc)

Drain to Source Breakdown Voltage :

500V

Qualification Status :

Not Qualified

Transistor Polarity :

N-Channel

Number of Pins :

4

Power Dissipation-Max (Abs) :

400 W

Continuous Drain Current (ID) :

41A

Brand :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

8000pF @ 25V

Published :

2004

Height :

9.65 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Length :

38.23 mm

Series :

HiPerFET™

Avalanche Energy Rating (Eas) :

2500 mJ

DS Breakdown Voltage-Min :

500 V

Pbfree Code :

yes

Manufacturer :

IXYS

Mounting Type :

Chassis Mount

Pin Count :

4

Number of Channels :

1 Channel

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Status :

Active

Power Dissipation-Max :

400W Tc

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Package :

Tube

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

UPPER

Package / Case :

SOT-227-4, miniBLOC

Packaging :

Tube

Width :

25.42 mm

Mounting Style :

Chassis Mount

Vgs(th) (Max) @ Id :

4V @ 4mA

Base Product Number :

IXFE48

Rise Time :

22ns

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

110m Ω @ 24A, 10V

Product :

Power MOSFET Modules

Fall Time (Typ) :

10 ns

Minimum Operating Temperature :

- 40 C

Drain to Source Voltage (Vdss) :

500V

RoHS :

Details

Supplier Device Package :

SOT-227B

Drain Current-Max (Abs) (ID) :

41 A

Case Connection :

Isolated

Transistor Element Material :

SILICON

JESD-30 Code :

R-PUFM-X4

FET Type :

N-Channel

FET Feature :

--

Drain-source On Resistance-Max :

0.11Ohm

Reach Compliance Code :

Compliant

Number of Terminations :

4

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Power Dissipation :

400W

Package Shape :

RECTANGULAR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Type :

Discrete Semiconductor Modules

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

192A

Configuration :

Single