IXFE44N60

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Mfr.Part #
IXFE44N60
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 600V 41A SOT-227B
Stock
24,374
In Stock :
24,374

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
500W Tc
Power Dissipation (Max) :
500W (Tc)
Published :
2002
Reach Compliance Code :
Compliant
Drain Current-Max (Abs) (ID) :
41 A
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
20V
Package :
Tube
Product :
Power MOSFET Modules
Pulsed Drain Current-Max (IDM) :
176A
Configuration :
SINGLE WITH BUILT-IN DIODE
Tradename :
HyperFET
Avalanche Energy Rating (Eas) :
3000 mJ
Supplier Device Package :
SOT-227B
Number of Terminations :
4
Transistor Application :
SWITCHING
Base Product Number :
IXFE44
Product Category :
Discrete Semiconductor Modules
Product Type :
Discrete Semiconductor Modules
Product Status :
Obsolete
Continuous Drain Current (ID) :
41A
Drain-source On Resistance-Max :
0.13Ohm
Power Dissipation-Max (Abs) :
500 W
FET Feature :
--
Pbfree Code :
yes
Mounting Style :
Chassis Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
8900pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
RoHS Compliant
Mounting Type :
Chassis Mount
Rds On (Max) @ Id, Vgs :
130m Ω @ 22A, 10V
RoHS :
Compliant
Number of Terminals :
4
Turn-Off Delay Time :
110 ns
Case Connection :
Isolated
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Terminal Form :
UNSPECIFIED
Drain to Source Breakdown Voltage :
600V
Vgs (Max) :
±20V
FET Type :
N-Channel
Rise Time :
55ns
Min Operating Temperature :
-55 °C
Number of Channels :
1 Channel
Drain to Source Resistance :
130 mΩ
Input Capacitance :
8.9 nF
Minimum Operating Temperature :
- 55 C
Package / Case :
SOT-227-4, miniBLOC
Series :
HiPerFET™
Mount :
Chassis Mount
Number of Pins :
4
Rds On Max :
130 mΩ
Maximum Operating Temperature :
+ 150 C
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Current - Continuous Drain (Id) @ 25°C :
41A Tc
Operating Temperature :
-55°C~150°C TJ
Max Operating Temperature :
150 °C
Power Dissipation :
500W
Package Shape :
RECTANGULAR
Fall Time (Typ) :
45 ns
Height :
9.65 mm
Surface Mount :
No
Polarity/Channel Type :
N-Channel
Terminal Position :
UPPER
Manufacturer :
IXYS
Packaging :
Tube
JESD-30 Code :
R-PUFM-X4
Gate Charge (Qg) (Max) @ Vgs :
330nC @ 10V
Brand :
IXYS
Pin Count :
4
Additional Feature :
AVALANCHE RATED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Length :
38.23 mm
DS Breakdown Voltage-Min :
600 V
Drain to Source Voltage (Vdss) :
600 V
Max Power Dissipation :
500 W
Transistor Polarity :
N-Channel
Width :
25.42 mm
Datasheets
IXFE44N60
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE44N60 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Mounting Type:Chassis Mount, Number of Channels:1 Channel, Package / Case:SOT-227-4, miniBLOC, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, IXFE44N60 pinout, IXFE44N60 datasheet PDF, IXFE44N60 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE44N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE44N60


N-Channel Tube 130m Ω @ 22A, 10V ±20V 8900pF @ 25V 330nC @ 10V 600 V SOT-227-4, miniBLOC

IXFE44N60 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 8900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 41A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.Its drain current is 41 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 110 ns.Its maximum pulsed drain current is 176A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 130 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600 V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFE44N60 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 176A.
single MOSFETs transistor is 130 mΩ
a 600 V drain to source voltage (Vdss)


IXFE44N60 Applications


There are a lot of IXYS
IXFE44N60 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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