IXFE48N50Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

Single

Base Product Number :

IXFE48

Package :

Tube

Transistor Polarity :

N-Channel

Brand :

IXYS

Drain-source On Resistance-Max :

0.11Ohm

Width :

25.42 mm

Manufacturer :

IXYS

Mount :

Chassis Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

UNSPECIFIED

Series :

HiPerFET™

Number of Terminals :

4

Qualification Status :

Not Qualified

Number of Pins :

4

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

110m Ω @ 24A, 10V

Power Dissipation-Max :

400W Tc

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Turn-Off Delay Time :

75 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Style :

Chassis Mount

Package / Case :

SOT-227-4, miniBLOC

FET Feature :

--

Product Type :

Discrete Semiconductor Modules

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Length :

38.23 mm

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

DS Breakdown Voltage-Min :

500 V

Additional Feature :

AVALANCHE RATED

Mounting Type :

Chassis Mount

Maximum Operating Temperature :

+ 150 C

Drain to Source Voltage (Vdss) :

500V

Case Connection :

Isolated

Number of Channels :

1 Channel

Package Shape :

RECTANGULAR

Vgs(th) (Max) @ Id :

4V @ 4mA

Pin Count :

4

Number of Terminations :

4

Pulsed Drain Current-Max (IDM) :

192A

Rise Time :

22ns

Continuous Drain Current (ID) :

41A

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Minimum Operating Temperature :

- 40 C

Reach Compliance Code :

Compliant

Fall Time (Typ) :

10 ns

Terminal Position :

UPPER

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Power Dissipation :

400W

Operating Mode :

ENHANCEMENT MODE

Product Category :

Discrete Semiconductor Modules

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

2.5 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

400W (Tc)

Supplier Device Package :

SOT-227B

Packaging :

Tube

Tradename :

HyperFET

Power Dissipation-Max (Abs) :

400 W

RoHS :

Details

Drain to Source Breakdown Voltage :

500V

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Height :

9.65 mm

JESD-30 Code :

R-PUFM-X4

Published :

2003

Product Status :

Active

Product :

Power MOSFET Modules

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

41 A