IXFE44N50Q

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Mfr.Part #
IXFE44N50Q
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 39A SOT-227B
Stock
8,578
In Stock :
8,578

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED
Package :
Tube
Drain to Source Voltage (Vdss) :
500V
Product Type :
Discrete Semiconductor Modules
Number of Channels :
1 Channel
Packaging :
Tube
Terminal Form :
UNSPECIFIED
Power Dissipation-Max (Abs) :
400 W
Polarity/Channel Type :
N-Channel
Product Status :
Active
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Manufacturer :
IXYS
Number of Terminations :
4
Power Dissipation-Max :
400W Tc
Published :
2003
Rds On (Max) @ Id, Vgs :
120m Ω @ 22A, 10V
Number of Elements :
1
Power Dissipation (Max) :
400W (Tc)
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
39A Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Chassis Mount
Mounting Style :
Chassis Mount
Base Product Number :
IXFE44
Power Dissipation :
400W
Fall Time (Typ) :
10 ns
Continuous Drain Current (ID) :
39A
FET Type :
N-Channel
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
500V
Brand :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Pbfree Code :
yes
FET Feature :
--
Length :
38.23 mm
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
2.5 mJ
Number of Terminals :
4
Case Connection :
Isolated
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Height :
9.65 mm
Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS :
Details
Drain-source On Resistance-Max :
0.12Ohm
Series :
HiPerFET™
Tradename :
HyperFET
Pulsed Drain Current-Max (IDM) :
176A
Operating Mode :
ENHANCEMENT MODE
Maximum Operating Temperature :
+ 150 C
Operating Temperature :
-40°C~150°C TJ
Transistor Polarity :
N-Channel
Element Configuration :
Single
Vgs (Max) :
±20V
Rise Time :
22ns
Reach Compliance Code :
Compliant
Terminal Position :
UPPER
Mounting Type :
Chassis Mount
DS Breakdown Voltage-Min :
500 V
Package Shape :
RECTANGULAR
Surface Mount :
No
Width :
25.42 mm
Qualification Status :
Not Qualified
Package / Case :
SOT-227-4, miniBLOC
Vgs(th) (Max) @ Id :
4V @ 4mA
Product :
Power MOSFET Modules
Number of Pins :
4
Product Category :
Discrete Semiconductor Modules
Minimum Operating Temperature :
- 40 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
JESD-30 Code :
R-PUFM-X4
Supplier Device Package :
SOT-227B
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
4
Turn-Off Delay Time :
75 ns
Drain Current-Max (Abs) (ID) :
39 A
Datasheets
IXFE44N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE44N50Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:4, Operating Temperature:-40°C~150°C TJ, Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, Number of Pins:4, IXFE44N50Q pinout, IXFE44N50Q datasheet PDF, IXFE44N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE44N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE44N50Q


N-Channel Tube 120m Ω @ 22A, 10V ±20V 7000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC

IXFE44N50Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2.5 mJ.A device's maximum input capacitance is 7000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 39A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 39 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 176A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFE44N50Q Features


the avalanche energy rating (Eas) is 2.5 mJ
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a 500V drain to source voltage (Vdss)


IXFE44N50Q Applications


There are a lot of IXYS
IXFE44N50Q applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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