IXFE48N50QD3
- Mfr.Part #
- IXFE48N50QD3
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 41A SOT-227B
- Stock
- 19,597
- In Stock :
- 19,597
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Power Dissipation-Max (Abs) :
- 400 W
- Rise Time :
- 22ns
- Base Product Number :
- IXFE48
- Pulsed Drain Current-Max (IDM) :
- 192A
- Power Dissipation (Max) :
- 400W (Tc)
- Manufacturer :
- IXYS Corporation
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 10 ns
- Min Operating Temperature :
- -40 °C
- Power Dissipation :
- 400W
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Product Status :
- Active
- Package :
- Tube
- Input Capacitance :
- 8 nF
- DS Breakdown Voltage-Min :
- 500 V
- Operating Temperature :
- -40°C~150°C TJ
- Packaging :
- Tube
- Terminal Position :
- UPPER
- Continuous Drain Current (ID) :
- 41A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Supplier Device Package :
- SOT-227B
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- FET Feature :
- --
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max :
- 0.11Ohm
- Package Shape :
- RECTANGULAR
- Element Configuration :
- Single
- Number of Pins :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 500V
- Turn-Off Delay Time :
- 75 ns
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 4
- Drain Current-Max (Abs) (ID) :
- 41 A
- Power Dissipation-Max :
- 400W Tc
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- SOT-227-4, miniBLOC
- Published :
- 2004
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 24A, 10V
- Reach Compliance Code :
- Compliant
- Number of Terminations :
- 4
- RoHS :
- Compliant
- Vgs (Max) :
- ±20V
- Max Power Dissipation :
- 400 W
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Mounting Type :
- Chassis Mount
- Terminal Form :
- UNSPECIFIED
- Drain to Source Voltage (Vdss) :
- 500V
- Series :
- HiPerFET™
- Max Operating Temperature :
- 150 °C
- Drain to Source Resistance :
- 110 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- Isolated
- Number of Terminals :
- 4
- JESD-30 Code :
- R-PUFM-X4
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Chassis Mount
- Polarity/Channel Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 8000pF @ 25V
- Rds On Max :
- 110 mΩ
- Datasheets
- IXFE48N50QD3

N-Channel Tube 110m Ω @ 24A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC
IXFE48N50QD3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 8000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 41A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.41 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 192A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 110 mΩ exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFE48N50QD3 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 192A.
single MOSFETs transistor is 110 mΩ
a 500V drain to source voltage (Vdss)
IXFE48N50QD3 Applications
There are a lot of IXYS
IXFE48N50QD3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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