IXFE48N50QD3

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Mfr.Part #
IXFE48N50QD3
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 41A SOT-227B
Stock
19,597
In Stock :
19,597

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
500V
Number of Pins :
4
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
Package Shape :
RECTANGULAR
Power Dissipation-Max :
400W Tc
Base Product Number :
IXFE48
Turn-Off Delay Time :
75 ns
Polarity/Channel Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS :
Compliant
JESD-30 Code :
R-PUFM-X4
Product Status :
Active
Pulsed Drain Current-Max (IDM) :
192A
Series :
HiPerFET™
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
110m Ω @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C :
41A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Packaging :
Tube
Drain-source On Resistance-Max :
0.11Ohm
Pbfree Code :
yes
Number of Terminals :
4
Operating Temperature :
-40°C~150°C TJ
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
UNSPECIFIED
Number of Terminations :
4
DS Breakdown Voltage-Min :
500 V
Power Dissipation-Max (Abs) :
400 W
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Surface Mount :
No
Supplier Device Package :
SOT-227B
Pin Count :
4
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On Max :
110 mΩ
Min Operating Temperature :
-40 °C
Mounting Type :
Chassis Mount
Element Configuration :
Single
Transistor Application :
SWITCHING
Max Power Dissipation :
400 W
Terminal Position :
UPPER
Input Capacitance :
8 nF
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
10 ns
Power Dissipation :
400W
Package / Case :
SOT-227-4, miniBLOC
Additional Feature :
AVALANCHE RATED
Max Operating Temperature :
150 °C
Rise Time :
22ns
Drain to Source Resistance :
110 mΩ
FET Feature :
--
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
Continuous Drain Current (ID) :
41A
Manufacturer :
IXYS Corporation
Vgs(th) (Max) @ Id :
4V @ 4mA
Case Connection :
Isolated
Drain Current-Max (Abs) (ID) :
41 A
Published :
2004
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Elements :
1
Avalanche Energy Rating (Eas) :
2500 mJ
Mount :
Chassis Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Power Dissipation (Max) :
400W (Tc)
Qualification Status :
Not Qualified
Package :
Tube
Drain to Source Voltage (Vdss) :
500V
Datasheets
IXFE48N50QD3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE48N50QD3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Operating Temperature:-40°C~150°C TJ, Number of Terminations:4, Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, IXFE48N50QD3 pinout, IXFE48N50QD3 datasheet PDF, IXFE48N50QD3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE48N50QD3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE48N50QD3


N-Channel Tube 110m Ω @ 24A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC

IXFE48N50QD3 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 8000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 41A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.41 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 192A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 110 mΩ exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFE48N50QD3 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 192A.
single MOSFETs transistor is 110 mΩ
a 500V drain to source voltage (Vdss)


IXFE48N50QD3 Applications


There are a lot of IXYS
IXFE48N50QD3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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