IXFE48N50QD3
- Mfr.Part #
- IXFE48N50QD3
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 41A SOT-227B
- Stock
- 19,597
- In Stock :
- 19,597
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 500V
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max :
- 400W Tc
- Base Product Number :
- IXFE48
- Turn-Off Delay Time :
- 75 ns
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS :
- Compliant
- JESD-30 Code :
- R-PUFM-X4
- Product Status :
- Active
- Pulsed Drain Current-Max (IDM) :
- 192A
- Series :
- HiPerFET™
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 24A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.11Ohm
- Pbfree Code :
- yes
- Number of Terminals :
- 4
- Operating Temperature :
- -40°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- UNSPECIFIED
- Number of Terminations :
- 4
- DS Breakdown Voltage-Min :
- 500 V
- Power Dissipation-Max (Abs) :
- 400 W
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Surface Mount :
- No
- Supplier Device Package :
- SOT-227B
- Pin Count :
- 4
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On Max :
- 110 mΩ
- Min Operating Temperature :
- -40 °C
- Mounting Type :
- Chassis Mount
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 400 W
- Terminal Position :
- UPPER
- Input Capacitance :
- 8 nF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 10 ns
- Power Dissipation :
- 400W
- Package / Case :
- SOT-227-4, miniBLOC
- Additional Feature :
- AVALANCHE RATED
- Max Operating Temperature :
- 150 °C
- Rise Time :
- 22ns
- Drain to Source Resistance :
- 110 mΩ
- FET Feature :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 8000pF @ 25V
- Continuous Drain Current (ID) :
- 41A
- Manufacturer :
- IXYS Corporation
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Case Connection :
- Isolated
- Drain Current-Max (Abs) (ID) :
- 41 A
- Published :
- 2004
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Mount :
- Chassis Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation (Max) :
- 400W (Tc)
- Qualification Status :
- Not Qualified
- Package :
- Tube
- Drain to Source Voltage (Vdss) :
- 500V
- Datasheets
- IXFE48N50QD3

N-Channel Tube 110m Ω @ 24A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC
IXFE48N50QD3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 8000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 41A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.41 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 192A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 110 mΩ exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFE48N50QD3 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 192A.
single MOSFETs transistor is 110 mΩ
a 500V drain to source voltage (Vdss)
IXFE48N50QD3 Applications
There are a lot of IXYS
IXFE48N50QD3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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