IXFE48N50QD3

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Mfr.Part #
IXFE48N50QD3
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 41A SOT-227B
Stock
19,597
In Stock :
19,597

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Avalanche Energy Rating (Eas) :
2500 mJ
Power Dissipation-Max (Abs) :
400 W
Rise Time :
22ns
Base Product Number :
IXFE48
Pulsed Drain Current-Max (IDM) :
192A
Power Dissipation (Max) :
400W (Tc)
Manufacturer :
IXYS Corporation
Gate to Source Voltage (Vgs) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
10 ns
Min Operating Temperature :
-40 °C
Power Dissipation :
400W
Qualification Status :
Not Qualified
Pbfree Code :
yes
Product Status :
Active
Package :
Tube
Input Capacitance :
8 nF
DS Breakdown Voltage-Min :
500 V
Operating Temperature :
-40°C~150°C TJ
Packaging :
Tube
Terminal Position :
UPPER
Continuous Drain Current (ID) :
41A
Configuration :
SINGLE WITH BUILT-IN DIODE
Supplier Device Package :
SOT-227B
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
FET Feature :
--
FET Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain-source On Resistance-Max :
0.11Ohm
Package Shape :
RECTANGULAR
Element Configuration :
Single
Number of Pins :
4
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
500V
Turn-Off Delay Time :
75 ns
Operating Mode :
ENHANCEMENT MODE
Pin Count :
4
Drain Current-Max (Abs) (ID) :
41 A
Power Dissipation-Max :
400W Tc
Additional Feature :
AVALANCHE RATED
Package / Case :
SOT-227-4, miniBLOC
Published :
2004
Rds On (Max) @ Id, Vgs :
110m Ω @ 24A, 10V
Reach Compliance Code :
Compliant
Number of Terminations :
4
RoHS :
Compliant
Vgs (Max) :
±20V
Max Power Dissipation :
400 W
Number of Elements :
1
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
4V @ 4mA
Mounting Type :
Chassis Mount
Terminal Form :
UNSPECIFIED
Drain to Source Voltage (Vdss) :
500V
Series :
HiPerFET™
Max Operating Temperature :
150 °C
Drain to Source Resistance :
110 mΩ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
Isolated
Number of Terminals :
4
JESD-30 Code :
R-PUFM-X4
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
41A Tc
RoHS Status :
ROHS3 Compliant
Mount :
Chassis Mount
Polarity/Channel Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
Rds On Max :
110 mΩ
Datasheets
IXFE48N50QD3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE48N50QD3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Number of Pins:4, Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, Mounting Type:Chassis Mount, IXFE48N50QD3 pinout, IXFE48N50QD3 datasheet PDF, IXFE48N50QD3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE48N50QD3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE48N50QD3


N-Channel Tube 110m Ω @ 24A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC

IXFE48N50QD3 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 8000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 41A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.41 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 192A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 110 mΩ exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFE48N50QD3 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 192A.
single MOSFETs transistor is 110 mΩ
a 500V drain to source voltage (Vdss)


IXFE48N50QD3 Applications


There are a lot of IXYS
IXFE48N50QD3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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