IXFE48N50QD3
- Mfr.Part #
- IXFE48N50QD3
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 41A SOT-227B
- Stock
- 19,597
- In Stock :
- 19,597
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Package Shape :
- RECTANGULAR
- DS Breakdown Voltage-Min :
- 500 V
- Drain to Source Voltage (Vdss) :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 75 ns
- Rds On Max :
- 110 mΩ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 192A
- Power Dissipation-Max (Abs) :
- 400 W
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 400W Tc
- RoHS :
- Compliant
- Supplier Device Package :
- SOT-227B
- FET Feature :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Type :
- Chassis Mount
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Terminal Form :
- UNSPECIFIED
- Drain to Source Breakdown Voltage :
- 500V
- Min Operating Temperature :
- -40 °C
- Packaging :
- Tube
- Power Dissipation :
- 400W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Element Configuration :
- Single
- Number of Terminations :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- UPPER
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 400 W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- IXFE48
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Resistance :
- 110 mΩ
- Published :
- 2004
- Input Capacitance (Ciss) (Max) @ Vds :
- 8000pF @ 25V
- Case Connection :
- Isolated
- Fall Time (Typ) :
- 10 ns
- Package / Case :
- SOT-227-4, miniBLOC
- Max Operating Temperature :
- 150 °C
- Additional Feature :
- AVALANCHE RATED
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 41A
- Drain-source On Resistance-Max :
- 0.11Ohm
- JESD-30 Code :
- R-PUFM-X4
- Rise Time :
- 22ns
- Gate to Source Voltage (Vgs) :
- 20V
- Manufacturer :
- IXYS Corporation
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Pin Count :
- 4
- Number of Terminals :
- 4
- Product Status :
- Active
- Operating Temperature :
- -40°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 41 A
- FET Type :
- N-Channel
- Mount :
- Chassis Mount
- Series :
- HiPerFET™
- Transistor Element Material :
- SILICON
- Number of Pins :
- 4
- Power Dissipation (Max) :
- 400W (Tc)
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 24A, 10V
- Input Capacitance :
- 8 nF
- Datasheets
- IXFE48N50QD3

N-Channel Tube 110m Ω @ 24A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC
IXFE48N50QD3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 8000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 41A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.41 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 192A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 110 mΩ exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFE48N50QD3 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 192A.
single MOSFETs transistor is 110 mΩ
a 500V drain to source voltage (Vdss)
IXFE48N50QD3 Applications
There are a lot of IXYS
IXFE48N50QD3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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