IXFE180N10

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Mfr.Part #
IXFE180N10
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 100V 176A SOT227B
Stock
31,812
In Stock :
31,812

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Number of Terminals :
4
Pulsed Drain Current-Max (IDM) :
720A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Product Number :
IXFE180
Series :
HiPerFET™
DS Breakdown Voltage-Min :
100 V
Configuration :
SINGLE WITH BUILT-IN DIODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
65 ns
Drain-source On Resistance-Max :
0.008Ohm
Drain to Source Breakdown Voltage :
100V
Drain Current-Max (Abs) (ID) :
176 A
Avalanche Energy Rating (Eas) :
3000 mJ
Power Dissipation-Max :
500W Tc
Rise Time :
90ns
Package / Case :
SOT-227-4, miniBLOC
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Pins :
4
Gate to Source Voltage (Vgs) :
20V
Power Dissipation (Max) :
500W (Tc)
Additional Feature :
AVALANCHE RATED
Supplier Device Package :
SOT-227B
Reach Compliance Code :
Compliant
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Power Dissipation-Max (Abs) :
500 W
Mounting Type :
Chassis Mount
Drain to Source Voltage (Vdss) :
100V
Rds On (Max) @ Id, Vgs :
8m Ω @ 90A, 10V
Surface Mount :
No
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
9100pF @ 25V
Package :
Tube
Published :
2002
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PUFM-X4
Terminal Form :
UNSPECIFIED
Mount :
Chassis Mount
Pin Count :
4
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
RoHS Status :
RoHS Compliant
Number of Terminations :
4
Vgs(th) (Max) @ Id :
4V @ 8mA
Turn-Off Delay Time :
140 ns
Qualification Status :
Not Qualified
Packaging :
Tube
Continuous Drain Current (ID) :
176A
Case Connection :
Isolated
FET Feature :
--
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
176A Tc
Pbfree Code :
yes
Power Dissipation :
500W
Product Status :
Obsolete
Terminal Position :
UPPER
Manufacturer :
IXYS Corporation
Datasheets
IXFE180N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE180N10 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-227-4, miniBLOC, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, Mounting Type:Chassis Mount, Number of Terminations:4, IXFE180N10 pinout, IXFE180N10 datasheet PDF, IXFE180N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE180N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE180N10


N-Channel Tube 8m Ω @ 90A, 10V ±20V 9100pF @ 25V 360nC @ 10V 100V SOT-227-4, miniBLOC

IXFE180N10 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 9100pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 176A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.As shown in the table below, the drain current of this device is 176 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 140 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 720A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFE180N10 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 176A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 720A.
a 100V drain to source voltage (Vdss)


IXFE180N10 Applications


There are a lot of IXYS
IXFE180N10 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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