IXFE180N10
- Mfr.Part #
- IXFE180N10
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 176A SOT227B
- Stock
- 31,812
- In Stock :
- 31,812
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Number of Terminals :
- 4
- Pulsed Drain Current-Max (IDM) :
- 720A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Product Number :
- IXFE180
- Series :
- HiPerFET™
- DS Breakdown Voltage-Min :
- 100 V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 65 ns
- Drain-source On Resistance-Max :
- 0.008Ohm
- Drain to Source Breakdown Voltage :
- 100V
- Drain Current-Max (Abs) (ID) :
- 176 A
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Power Dissipation-Max :
- 500W Tc
- Rise Time :
- 90ns
- Package / Case :
- SOT-227-4, miniBLOC
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Pins :
- 4
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation (Max) :
- 500W (Tc)
- Additional Feature :
- AVALANCHE RATED
- Supplier Device Package :
- SOT-227B
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Power Dissipation-Max (Abs) :
- 500 W
- Mounting Type :
- Chassis Mount
- Drain to Source Voltage (Vdss) :
- 100V
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 90A, 10V
- Surface Mount :
- No
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 9100pF @ 25V
- Package :
- Tube
- Published :
- 2002
- Polarity/Channel Type :
- N-Channel
- JESD-30 Code :
- R-PUFM-X4
- Terminal Form :
- UNSPECIFIED
- Mount :
- Chassis Mount
- Pin Count :
- 4
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 4
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Turn-Off Delay Time :
- 140 ns
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 176A
- Case Connection :
- Isolated
- FET Feature :
- --
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 176A Tc
- Pbfree Code :
- yes
- Power Dissipation :
- 500W
- Product Status :
- Obsolete
- Terminal Position :
- UPPER
- Manufacturer :
- IXYS Corporation
- Datasheets
- IXFE180N10

N-Channel Tube 8m Ω @ 90A, 10V ±20V 9100pF @ 25V 360nC @ 10V 100V SOT-227-4, miniBLOC
IXFE180N10 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 9100pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 176A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.As shown in the table below, the drain current of this device is 176 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 140 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 720A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFE180N10 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 176A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 720A.
a 100V drain to source voltage (Vdss)
IXFE180N10 Applications
There are a lot of IXYS
IXFE180N10 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
















