IXFE180N20

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Mfr.Part #
IXFE180N20
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 200V 158A SOT227B
Stock
7,173
In Stock :
7,173

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Chassis Mount
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
Case Connection :
Isolated
Length :
38.23 mm
Height :
9.65 mm
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Mounting Type :
Chassis Mount
Number of Channels :
1 Channel
Pbfree Code :
yes
Brand :
IXYS
Mounting Style :
Chassis Mount
Rds On Max :
12 mΩ
Series :
HiPerFET™
Fall Time (Typ) :
36 ns
Package :
Tube
Vgs (Max) :
±20V
Packaging :
Tube
Continuous Drain Current (ID) :
158A
Drain to Source Resistance :
12 mΩ
Vgs(th) (Max) @ Id :
4V @ 8mA
Maximum Operating Temperature :
+ 150 C
Polarity/Channel Type :
N-Channel
Product Category :
Discrete Semiconductor Modules
Current - Continuous Drain (Id) @ 25°C :
158A Tc
Supplier Device Package :
SOT-227B
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
500W Tc
Number of Terminations :
4
Product Type :
Discrete Semiconductor Modules
Number of Elements :
1
Power Dissipation (Max) :
500W (Tc)
Rise Time :
85ns
Surface Mount :
No
Turn-Off Delay Time :
180 ns
Rds On (Max) @ Id, Vgs :
12m Ω @ 500mA, 10V
Base Product Number :
IXFE180
Input Capacitance (Ciss) (Max) @ Vds :
14400pF @ 25V
DS Breakdown Voltage-Min :
200 V
Drain-source On Resistance-Max :
0.012Ohm
Terminal Form :
UNSPECIFIED
Tradename :
HyperFET
Width :
25.42 mm
Qualification Status :
Not Qualified
FET Type :
N-Channel
Terminal Position :
UPPER
Configuration :
SINGLE WITH BUILT-IN DIODE
Published :
2003
Product :
Power MOSFET Modules
Transistor Polarity :
N-Channel
ECCN Code :
EAR99
Max Operating Temperature :
150 °C
Drain to Source Breakdown Voltage :
200V
Pin Count :
4
Number of Terminals :
4
RoHS Status :
RoHS Compliant
JESD-30 Code :
R-XUFM-X4
Drive Voltage (Max Rds On,Min Rds On) :
10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
20V
RoHS :
Compliant
Number of Pins :
4
FET Feature :
--
Subcategory :
Discrete Semiconductor Modules
Gate Charge (Qg) (Max) @ Vgs :
380nC @ 10V
Avalanche Energy Rating (Eas) :
4000 mJ
Product Status :
Obsolete
Max Power Dissipation :
500 W
Pulsed Drain Current-Max (IDM) :
720A
Input Capacitance :
14.4 nF
Power Dissipation :
500W
Drain to Source Voltage (Vdss) :
200V
Min Operating Temperature :
-55 °C
Minimum Operating Temperature :
- 55 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Manufacturer :
IXYS
Package / Case :
SOT-227-4, miniBLOC
Datasheets
IXFE180N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE180N20 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Number of Channels:1 Channel, Number of Terminations:4, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Package / Case:SOT-227-4, miniBLOC, IXFE180N20 pinout, IXFE180N20 datasheet PDF, IXFE180N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE180N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE180N20


N-Channel Tube 12m Ω @ 500mA, 10V ±20V 14400pF @ 25V 380nC @ 10V 200V SOT-227-4, miniBLOC

IXFE180N20 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 4000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 14400pF @ 25V.This device conducts a continuous drain current (ID) of 158A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 180 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 720A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 12 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 200 V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFE180N20 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 158A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 180 ns
based on its rated peak drain current 720A.
single MOSFETs transistor is 12 mΩ
a 200V drain to source voltage (Vdss)


IXFE180N20 Applications


There are a lot of IXYS
IXFE180N20 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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