IXFE180N20
- Mfr.Part #
- IXFE180N20
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 158A SOT227B
- Stock
- 7,173
- In Stock :
- 7,173
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Chassis Mount
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- Isolated
- Length :
- 38.23 mm
- Height :
- 9.65 mm
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Mounting Type :
- Chassis Mount
- Number of Channels :
- 1 Channel
- Pbfree Code :
- yes
- Brand :
- IXYS
- Mounting Style :
- Chassis Mount
- Rds On Max :
- 12 mΩ
- Series :
- HiPerFET™
- Fall Time (Typ) :
- 36 ns
- Package :
- Tube
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 158A
- Drain to Source Resistance :
- 12 mΩ
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Maximum Operating Temperature :
- + 150 C
- Polarity/Channel Type :
- N-Channel
- Product Category :
- Discrete Semiconductor Modules
- Current - Continuous Drain (Id) @ 25°C :
- 158A Tc
- Supplier Device Package :
- SOT-227B
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 500W Tc
- Number of Terminations :
- 4
- Product Type :
- Discrete Semiconductor Modules
- Number of Elements :
- 1
- Power Dissipation (Max) :
- 500W (Tc)
- Rise Time :
- 85ns
- Surface Mount :
- No
- Turn-Off Delay Time :
- 180 ns
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 500mA, 10V
- Base Product Number :
- IXFE180
- Input Capacitance (Ciss) (Max) @ Vds :
- 14400pF @ 25V
- DS Breakdown Voltage-Min :
- 200 V
- Drain-source On Resistance-Max :
- 0.012Ohm
- Terminal Form :
- UNSPECIFIED
- Tradename :
- HyperFET
- Width :
- 25.42 mm
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Terminal Position :
- UPPER
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2003
- Product :
- Power MOSFET Modules
- Transistor Polarity :
- N-Channel
- ECCN Code :
- EAR99
- Max Operating Temperature :
- 150 °C
- Drain to Source Breakdown Voltage :
- 200V
- Pin Count :
- 4
- Number of Terminals :
- 4
- RoHS Status :
- RoHS Compliant
- JESD-30 Code :
- R-XUFM-X4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS :
- Compliant
- Number of Pins :
- 4
- FET Feature :
- --
- Subcategory :
- Discrete Semiconductor Modules
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Product Status :
- Obsolete
- Max Power Dissipation :
- 500 W
- Pulsed Drain Current-Max (IDM) :
- 720A
- Input Capacitance :
- 14.4 nF
- Power Dissipation :
- 500W
- Drain to Source Voltage (Vdss) :
- 200V
- Min Operating Temperature :
- -55 °C
- Minimum Operating Temperature :
- - 55 C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Package / Case :
- SOT-227-4, miniBLOC
- Datasheets
- IXFE180N20

N-Channel Tube 12m Ω @ 500mA, 10V ±20V 14400pF @ 25V 380nC @ 10V 200V SOT-227-4, miniBLOC
IXFE180N20 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 4000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 14400pF @ 25V.This device conducts a continuous drain current (ID) of 158A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 180 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 720A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 12 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 200 V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFE180N20 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 158A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 180 ns
based on its rated peak drain current 720A.
single MOSFETs transistor is 12 mΩ
a 200V drain to source voltage (Vdss)
IXFE180N20 Applications
There are a lot of IXYS
IXFE180N20 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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