IXFE44N50QD3
- Mfr.Part #
- IXFE44N50QD3
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 39A SOT-227B
- Stock
- 49,738
- In Stock :
- 49,738
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 22A, 10V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Chassis Mount
- Base Product Number :
- IXFE44
- Element Configuration :
- Single
- Number of Pins :
- 4
- Case Connection :
- Isolated
- Package / Case :
- SOT-227-4, miniBLOC
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 4
- Power Dissipation-Max :
- 400W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Reach Compliance Code :
- Compliant
- Fall Time (Typ) :
- 10 ns
- JESD-30 Code :
- R-PUFM-X4
- Drain Current-Max (Abs) (ID) :
- 39 A
- DS Breakdown Voltage-Min :
- 500 V
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 400W (Tc)
- Manufacturer :
- IXYS Corporation
- Input Capacitance (Ciss) (Max) @ Vds :
- 8000pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max :
- 0.12Ohm
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 4
- Terminal Form :
- UNSPECIFIED
- Package :
- Tube
- Series :
- HiPerFET™
- Supplier Device Package :
- SOT-227B
- Pbfree Code :
- yes
- Number of Terminals :
- 4
- FET Feature :
- --
- Terminal Position :
- UPPER
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 39A Tc
- Power Dissipation :
- 400W
- Product Status :
- Active
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 176A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Rise Time :
- 22ns
- Power Dissipation-Max (Abs) :
- 400 W
- Turn-Off Delay Time :
- 75 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 500V
- Operating Temperature :
- -40°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 500V
- Published :
- 2004
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Mount :
- Chassis Mount
- Continuous Drain Current (ID) :
- 39A
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Datasheets
- IXFE44N50QD3

N-Channel Tube 120m Ω @ 22A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC
IXFE44N50QD3 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8000pF @ 25V.This device has a continuous drain current (ID) of [39A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 39 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 176A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFE44N50QD3 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a 500V drain to source voltage (Vdss)
IXFE44N50QD3 Applications
There are a lot of IXYS
IXFE44N50QD3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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