IXFE44N50QD3

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Mfr.Part #
IXFE44N50QD3
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 39A SOT-227B
Stock
49,738
In Stock :
49,738

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.12Ohm
Manufacturer :
IXYS Corporation
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
Polarity/Channel Type :
N-Channel
Packaging :
Tube
Terminal Position :
UPPER
JESD-30 Code :
R-PUFM-X4
FET Feature :
--
Transistor Element Material :
SILICON
Product Status :
Active
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Number of Terminals :
4
Package :
Tube
Vgs(th) (Max) @ Id :
4V @ 4mA
DS Breakdown Voltage-Min :
500 V
Reach Compliance Code :
Compliant
Surface Mount :
No
Pin Count :
4
Drain Current-Max (Abs) (ID) :
39 A
Pbfree Code :
yes
Element Configuration :
Single
Avalanche Energy Rating (Eas) :
2500 mJ
Turn-Off Delay Time :
75 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
400W Tc
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
39A Tc
Base Product Number :
IXFE44
Power Dissipation-Max (Abs) :
400 W
Continuous Drain Current (ID) :
39A
Operating Temperature :
-40°C~150°C TJ
Power Dissipation (Max) :
400W (Tc)
Series :
HiPerFET™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Supplier Device Package :
SOT-227B
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation :
400W
FET Type :
N-Channel
Mounting Type :
Chassis Mount
Vgs (Max) :
±20V
Number of Pins :
4
Published :
2004
Number of Terminations :
4
Rds On (Max) @ Id, Vgs :
120m Ω @ 22A, 10V
Package / Case :
SOT-227-4, miniBLOC
Gate to Source Voltage (Vgs) :
20V
Terminal Form :
UNSPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
10 ns
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
500V
Qualification Status :
Not Qualified
Mount :
Chassis Mount
Rise Time :
22ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
Isolated
Drain to Source Breakdown Voltage :
500V
Pulsed Drain Current-Max (IDM) :
176A
Datasheets
IXFE44N50QD3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE44N50QD3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Mounting Type:Chassis Mount, Number of Pins:4, Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, IXFE44N50QD3 pinout, IXFE44N50QD3 datasheet PDF, IXFE44N50QD3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE44N50QD3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE44N50QD3


N-Channel Tube 120m Ω @ 22A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC

IXFE44N50QD3 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8000pF @ 25V.This device has a continuous drain current (ID) of [39A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 39 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 176A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFE44N50QD3 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a 500V drain to source voltage (Vdss)


IXFE44N50QD3 Applications


There are a lot of IXYS
IXFE44N50QD3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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