IXFE44N50QD3

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Mfr.Part #
IXFE44N50QD3
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 39A SOT-227B
Stock
49,738
In Stock :
49,738

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
120m Ω @ 22A, 10V
Transistor Application :
SWITCHING
Mounting Type :
Chassis Mount
Base Product Number :
IXFE44
Element Configuration :
Single
Number of Pins :
4
Case Connection :
Isolated
Package / Case :
SOT-227-4, miniBLOC
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Pin Count :
4
Power Dissipation-Max :
400W Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Reach Compliance Code :
Compliant
Fall Time (Typ) :
10 ns
JESD-30 Code :
R-PUFM-X4
Drain Current-Max (Abs) (ID) :
39 A
DS Breakdown Voltage-Min :
500 V
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation (Max) :
400W (Tc)
Manufacturer :
IXYS Corporation
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain-source On Resistance-Max :
0.12Ohm
Qualification Status :
Not Qualified
Number of Terminations :
4
Terminal Form :
UNSPECIFIED
Package :
Tube
Series :
HiPerFET™
Supplier Device Package :
SOT-227B
Pbfree Code :
yes
Number of Terminals :
4
FET Feature :
--
Terminal Position :
UPPER
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
39A Tc
Power Dissipation :
400W
Product Status :
Active
Vgs (Max) :
±20V
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Surface Mount :
No
Polarity/Channel Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
176A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Rise Time :
22ns
Power Dissipation-Max (Abs) :
400 W
Turn-Off Delay Time :
75 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
500V
Operating Temperature :
-40°C~150°C TJ
Drain to Source Voltage (Vdss) :
500V
Published :
2004
Avalanche Energy Rating (Eas) :
2500 mJ
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
4V @ 4mA
Mount :
Chassis Mount
Continuous Drain Current (ID) :
39A
Number of Elements :
1
Package Shape :
RECTANGULAR
Datasheets
IXFE44N50QD3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE44N50QD3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Number of Pins:4, Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, Operating Temperature:-40°C~150°C TJ, IXFE44N50QD3 pinout, IXFE44N50QD3 datasheet PDF, IXFE44N50QD3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE44N50QD3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE44N50QD3


N-Channel Tube 120m Ω @ 22A, 10V ±20V 8000pF @ 25V 190nC @ 10V 500V SOT-227-4, miniBLOC

IXFE44N50QD3 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8000pF @ 25V.This device has a continuous drain current (ID) of [39A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 39 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 176A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFE44N50QD3 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a 500V drain to source voltage (Vdss)


IXFE44N50QD3 Applications


There are a lot of IXYS
IXFE44N50QD3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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