IXFE39N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.22Ohm

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

13400pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Number of Terminals :

4

Number of Terminations :

4

Number of Pins :

4

Packaging :

Tube

Width :

25.42 mm

Reach Compliance Code :

Compliant

Maximum Operating Temperature :

+ 150 C

Rds On (Max) @ Id, Vgs :

220m Ω @ 19.5A, 10V

Minimum Operating Temperature :

- 40 C

Series :

HiPerFET™

Product Category :

Discrete Semiconductor Modules

Height :

9.65 mm

Power Dissipation (Max) :

580W (Tc)

Number of Channels :

1 Channel

Manufacturer :

IXYS

Fall Time (Typ) :

30 ns

Mounting Type :

Chassis Mount

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

580 W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

375nC @ 10V

Terminal Position :

UPPER

Surface Mount :

No

Mount :

Chassis Mount

Continuous Drain Current (ID) :

34A

Drain to Source Voltage (Vdss) :

900V

Vgs(th) (Max) @ Id :

5V @ 8mA

Package / Case :

SOT-227-4, miniBLOC

FET Feature :

--

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Polarity :

N-Channel

RoHS :

Details

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

Pin Count :

4

Package Shape :

RECTANGULAR

Operating Temperature :

-40°C~150°C TJ

Transistor Element Material :

SILICON

Product :

Power MOSFET Modules

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Brand :

IXYS

Configuration :

SINGLE WITH BUILT-IN DIODE

Base Product Number :

IXFE39

Terminal Form :

UNSPECIFIED

Case Connection :

Isolated

Supplier Device Package :

SOT-227B

Polarity/Channel Type :

N-Channel

Length :

38.23 mm

DS Breakdown Voltage-Min :

900 V

Power Dissipation-Max :

580W Tc

Power Dissipation :

580W

Pulsed Drain Current-Max (IDM) :

154 A

Product Type :

Discrete Semiconductor Modules

Tradename :

HyperFET

Published :

2003

Rise Time :

68ns

Product Status :

Obsolete

Avalanche Energy Rating (Eas) :

4000 mJ

Turn-Off Delay Time :

125 ns

Drain to Source Breakdown Voltage :

900V

JESD-30 Code :

R-PUFM-X4

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

34 A

Mounting Style :

Chassis Mount

Package :

Tube