IXFE39N90
- Mfr.Part #
- IXFE39N90
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 34A SOT227B
- Stock
- 38,916
- In Stock :
- 38,916
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 580W (Tc)
- FET Feature :
- --
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Mounting Style :
- Chassis Mount
- Pulsed Drain Current-Max (IDM) :
- 154 A
- Drain-source On Resistance-Max :
- 0.22Ohm
- Terminal Position :
- UPPER
- Fall Time (Typ) :
- 30 ns
- Length :
- 38.23 mm
- Transistor Polarity :
- N-Channel
- Product Type :
- Discrete Semiconductor Modules
- Package / Case :
- SOT-227-4, miniBLOC
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Breakdown Voltage :
- 900V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 125 ns
- Product :
- Power MOSFET Modules
- Power Dissipation-Max :
- 580W Tc
- Rds On (Max) @ Id, Vgs :
- 220m Ω @ 19.5A, 10V
- Package Shape :
- RECTANGULAR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 900V
- Product Category :
- Discrete Semiconductor Modules
- Supplier Device Package :
- SOT-227B
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- DS Breakdown Voltage-Min :
- 900 V
- RoHS Status :
- RoHS Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 4
- Height :
- 9.65 mm
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2003
- Package :
- Tube
- Number of Pins :
- 4
- Pin Count :
- 4
- Surface Mount :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HiPerFET™
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Compliant
- Drain Current-Max (Abs) (ID) :
- 34 A
- Continuous Drain Current (ID) :
- 34A
- Power Dissipation :
- 580W
- Mounting Type :
- Chassis Mount
- Packaging :
- Tube
- Product Status :
- Obsolete
- RoHS :
- Details
- Mount :
- Chassis Mount
- Base Product Number :
- IXFE39
- Vgs (Max) :
- ±20V
- Brand :
- IXYS
- Rise Time :
- 68ns
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 580 W
- Input Capacitance (Ciss) (Max) @ Vds :
- 13400pF @ 25V
- Manufacturer :
- IXYS
- Tradename :
- HyperFET
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Minimum Operating Temperature :
- - 40 C
- Width :
- 25.42 mm
- Qualification Status :
- Not Qualified
- Case Connection :
- Isolated
- Terminal Form :
- UNSPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 375nC @ 10V
- Number of Terminals :
- 4
- JESD-30 Code :
- R-PUFM-X4
- Maximum Operating Temperature :
- + 150 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Channels :
- 1 Channel
- Number of Elements :
- 1
- Operating Temperature :
- -40°C~150°C TJ
- Pbfree Code :
- yes
- Datasheets
- IXFE39N90

N-Channel Tube 220m Ω @ 19.5A, 10V ±20V 13400pF @ 25V 375nC @ 10V 900V SOT-227-4, miniBLOC
IXFE39N90 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 4000 mJ.A device's maximum input capacitance is 13400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 34A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=900V, and this device has a drain-to-source breakdown voltage of 900V voltage.Its drain current is 34 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 125 ns.Its maximum pulsed drain current is 154 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 900 V.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFE39N90 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 125 ns
based on its rated peak drain current 154 A.
a 900V drain to source voltage (Vdss)
IXFE39N90 Applications
There are a lot of IXYS
IXFE39N90 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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