IXFE39N90

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Mfr.Part #
IXFE39N90
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 900V 34A SOT227B
Stock
38,916
In Stock :
38,916

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation (Max) :
580W (Tc)
FET Feature :
--
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
34A Tc
Mounting Style :
Chassis Mount
Pulsed Drain Current-Max (IDM) :
154 A
Drain-source On Resistance-Max :
0.22Ohm
Terminal Position :
UPPER
Fall Time (Typ) :
30 ns
Length :
38.23 mm
Transistor Polarity :
N-Channel
Product Type :
Discrete Semiconductor Modules
Package / Case :
SOT-227-4, miniBLOC
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage :
900V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
125 ns
Product :
Power MOSFET Modules
Power Dissipation-Max :
580W Tc
Rds On (Max) @ Id, Vgs :
220m Ω @ 19.5A, 10V
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
900V
Product Category :
Discrete Semiconductor Modules
Supplier Device Package :
SOT-227B
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
DS Breakdown Voltage-Min :
900 V
RoHS Status :
RoHS Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
4
Height :
9.65 mm
Gate to Source Voltage (Vgs) :
20V
Published :
2003
Package :
Tube
Number of Pins :
4
Pin Count :
4
Surface Mount :
No
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
5V @ 8mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
HiPerFET™
Transistor Element Material :
SILICON
Reach Compliance Code :
Compliant
Drain Current-Max (Abs) (ID) :
34 A
Continuous Drain Current (ID) :
34A
Power Dissipation :
580W
Mounting Type :
Chassis Mount
Packaging :
Tube
Product Status :
Obsolete
RoHS :
Details
Mount :
Chassis Mount
Base Product Number :
IXFE39
Vgs (Max) :
±20V
Brand :
IXYS
Rise Time :
68ns
Polarity/Channel Type :
N-Channel
Power Dissipation-Max (Abs) :
580 W
Input Capacitance (Ciss) (Max) @ Vds :
13400pF @ 25V
Manufacturer :
IXYS
Tradename :
HyperFET
Avalanche Energy Rating (Eas) :
4000 mJ
Minimum Operating Temperature :
- 40 C
Width :
25.42 mm
Qualification Status :
Not Qualified
Case Connection :
Isolated
Terminal Form :
UNSPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
375nC @ 10V
Number of Terminals :
4
JESD-30 Code :
R-PUFM-X4
Maximum Operating Temperature :
+ 150 C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Channels :
1 Channel
Number of Elements :
1
Operating Temperature :
-40°C~150°C TJ
Pbfree Code :
yes
Datasheets
IXFE39N90
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE39N90 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, Number of Pins:4, Mounting Type:Chassis Mount, Number of Channels:1 Channel, Operating Temperature:-40°C~150°C TJ, IXFE39N90 pinout, IXFE39N90 datasheet PDF, IXFE39N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE39N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE39N90


N-Channel Tube 220m Ω @ 19.5A, 10V ±20V 13400pF @ 25V 375nC @ 10V 900V SOT-227-4, miniBLOC

IXFE39N90 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 4000 mJ.A device's maximum input capacitance is 13400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 34A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=900V, and this device has a drain-to-source breakdown voltage of 900V voltage.Its drain current is 34 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 125 ns.Its maximum pulsed drain current is 154 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 900 V.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFE39N90 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 125 ns
based on its rated peak drain current 154 A.
a 900V drain to source voltage (Vdss)


IXFE39N90 Applications


There are a lot of IXYS
IXFE39N90 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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