IXFE39N90

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Mfr.Part #
IXFE39N90
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 900V 34A SOT227B
Stock
38,916
In Stock :
38,916

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
SOT-227B
Fall Time (Typ) :
30 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PUFM-X4
Input Capacitance (Ciss) (Max) @ Vds :
13400pF @ 25V
Power Dissipation (Max) :
580W (Tc)
Transistor Element Material :
SILICON
Polarity/Channel Type :
N-Channel
Transistor Polarity :
N-Channel
Qualification Status :
Not Qualified
Height :
9.65 mm
Number of Terminals :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
34A
Vgs(th) (Max) @ Id :
5V @ 8mA
Width :
25.42 mm
Surface Mount :
No
Gate Charge (Qg) (Max) @ Vgs :
375nC @ 10V
Number of Elements :
1
Mounting Type :
Chassis Mount
DS Breakdown Voltage-Min :
900 V
RoHS Status :
RoHS Compliant
Package / Case :
SOT-227-4, miniBLOC
Number of Channels :
1 Channel
Drain to Source Voltage (Vdss) :
900V
Pbfree Code :
yes
Product Type :
Discrete Semiconductor Modules
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rise Time :
68ns
Operating Mode :
ENHANCEMENT MODE
Product Status :
Obsolete
Published :
2003
Number of Terminations :
4
Turn-Off Delay Time :
125 ns
Package :
Tube
Terminal Position :
UPPER
Mount :
Chassis Mount
Base Product Number :
IXFE39
Package Shape :
RECTANGULAR
FET Feature :
--
Series :
HiPerFET™
Case Connection :
Isolated
Number of Pins :
4
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
580W
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max :
580W Tc
Operating Temperature :
-40°C~150°C TJ
Rds On (Max) @ Id, Vgs :
220m Ω @ 19.5A, 10V
Pulsed Drain Current-Max (IDM) :
154 A
Manufacturer :
IXYS
Length :
38.23 mm
Drain-source On Resistance-Max :
0.22Ohm
Packaging :
Tube
Mounting Style :
Chassis Mount
Reach Compliance Code :
Compliant
Minimum Operating Temperature :
- 40 C
Drain to Source Breakdown Voltage :
900V
Drain Current-Max (Abs) (ID) :
34 A
Pin Count :
4
RoHS :
Details
Brand :
IXYS
Terminal Form :
UNSPECIFIED
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
4000 mJ
Current - Continuous Drain (Id) @ 25°C :
34A Tc
Maximum Operating Temperature :
+ 150 C
Transistor Application :
SWITCHING
Tradename :
HyperFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Category :
Discrete Semiconductor Modules
Vgs (Max) :
±20V
Power Dissipation-Max (Abs) :
580 W
FET Type :
N-Channel
Product :
Power MOSFET Modules
Datasheets
IXFE39N90
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE39N90 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, Number of Channels:1 Channel, Number of Terminations:4, Number of Pins:4, Operating Temperature:-40°C~150°C TJ, IXFE39N90 pinout, IXFE39N90 datasheet PDF, IXFE39N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE39N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE39N90


N-Channel Tube 220m Ω @ 19.5A, 10V ±20V 13400pF @ 25V 375nC @ 10V 900V SOT-227-4, miniBLOC

IXFE39N90 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 4000 mJ.A device's maximum input capacitance is 13400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 34A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=900V, and this device has a drain-to-source breakdown voltage of 900V voltage.Its drain current is 34 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 125 ns.Its maximum pulsed drain current is 154 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 900 V.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFE39N90 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 125 ns
based on its rated peak drain current 154 A.
a 900V drain to source voltage (Vdss)


IXFE39N90 Applications


There are a lot of IXYS
IXFE39N90 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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