IXFE39N90

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Mfr.Part #
IXFE39N90
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 900V 34A SOT227B
Stock
38,916
In Stock :
38,916

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Compliant
Product Type :
Discrete Semiconductor Modules
Mounting Type :
Chassis Mount
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn-Off Delay Time :
125 ns
Gate to Source Voltage (Vgs) :
20V
Series :
HiPerFET™
Drain Current-Max (Abs) (ID) :
34 A
Maximum Operating Temperature :
+ 150 C
Product Category :
Discrete Semiconductor Modules
Transistor Element Material :
SILICON
Height :
9.65 mm
Brand :
IXYS
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Published :
2003
Vgs (Max) :
±20V
Supplier Device Package :
SOT-227B
Number of Terminals :
4
Manufacturer :
IXYS
Number of Terminations :
4
Case Connection :
Isolated
Width :
25.42 mm
Rise Time :
68ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Product Number :
IXFE39
Terminal Form :
UNSPECIFIED
Length :
38.23 mm
Fall Time (Typ) :
30 ns
Minimum Operating Temperature :
- 40 C
Operating Temperature :
-40°C~150°C TJ
DS Breakdown Voltage-Min :
900 V
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
UPPER
Product Status :
Obsolete
Mounting Style :
Chassis Mount
RoHS Status :
RoHS Compliant
Pin Count :
4
Power Dissipation-Max (Abs) :
580 W
Drain-source On Resistance-Max :
0.22Ohm
Avalanche Energy Rating (Eas) :
4000 mJ
Additional Feature :
AVALANCHE RATED
Transistor Application :
SWITCHING
FET Type :
N-Channel
Package / Case :
SOT-227-4, miniBLOC
Continuous Drain Current (ID) :
34A
Input Capacitance (Ciss) (Max) @ Vds :
13400pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
FET Feature :
--
Transistor Polarity :
N-Channel
Product :
Power MOSFET Modules
Rds On (Max) @ Id, Vgs :
220m Ω @ 19.5A, 10V
Polarity/Channel Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
375nC @ 10V
Package Shape :
RECTANGULAR
Surface Mount :
No
Mount :
Chassis Mount
Number of Elements :
1
Configuration :
SINGLE WITH BUILT-IN DIODE
Pbfree Code :
yes
RoHS :
Details
Power Dissipation-Max :
580W Tc
JESD-30 Code :
R-PUFM-X4
Pulsed Drain Current-Max (IDM) :
154 A
Number of Channels :
1 Channel
Package :
Tube
Drain to Source Voltage (Vdss) :
900V
Current - Continuous Drain (Id) @ 25°C :
34A Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Pins :
4
Power Dissipation :
580W
Drain to Source Breakdown Voltage :
900V
Vgs(th) (Max) @ Id :
5V @ 8mA
Tradename :
HyperFET
Power Dissipation (Max) :
580W (Tc)
Packaging :
Tube
Datasheets
IXFE39N90
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE39N90 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Number of Terminations:4, Operating Temperature:-40°C~150°C TJ, Package / Case:SOT-227-4, miniBLOC, Number of Channels:1 Channel, Number of Pins:4, IXFE39N90 pinout, IXFE39N90 datasheet PDF, IXFE39N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE39N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE39N90


N-Channel Tube 220m Ω @ 19.5A, 10V ±20V 13400pF @ 25V 375nC @ 10V 900V SOT-227-4, miniBLOC

IXFE39N90 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 4000 mJ.A device's maximum input capacitance is 13400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 34A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=900V, and this device has a drain-to-source breakdown voltage of 900V voltage.Its drain current is 34 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 125 ns.Its maximum pulsed drain current is 154 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 900 V.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFE39N90 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 125 ns
based on its rated peak drain current 154 A.
a 900V drain to source voltage (Vdss)


IXFE39N90 Applications


There are a lot of IXYS
IXFE39N90 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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