IXFE39N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Compliant

Product Type :

Discrete Semiconductor Modules

Mounting Type :

Chassis Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

125 ns

Gate to Source Voltage (Vgs) :

20V

Series :

HiPerFET™

Drain Current-Max (Abs) (ID) :

34 A

Maximum Operating Temperature :

+ 150 C

Product Category :

Discrete Semiconductor Modules

Transistor Element Material :

SILICON

Height :

9.65 mm

Brand :

IXYS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2003

Vgs (Max) :

±20V

Supplier Device Package :

SOT-227B

Number of Terminals :

4

Manufacturer :

IXYS

Number of Terminations :

4

Case Connection :

Isolated

Width :

25.42 mm

Rise Time :

68ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Product Number :

IXFE39

Terminal Form :

UNSPECIFIED

Length :

38.23 mm

Fall Time (Typ) :

30 ns

Minimum Operating Temperature :

- 40 C

Operating Temperature :

-40°C~150°C TJ

DS Breakdown Voltage-Min :

900 V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

UPPER

Product Status :

Obsolete

Mounting Style :

Chassis Mount

RoHS Status :

RoHS Compliant

Pin Count :

4

Power Dissipation-Max (Abs) :

580 W

Drain-source On Resistance-Max :

0.22Ohm

Avalanche Energy Rating (Eas) :

4000 mJ

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

FET Type :

N-Channel

Package / Case :

SOT-227-4, miniBLOC

Continuous Drain Current (ID) :

34A

Input Capacitance (Ciss) (Max) @ Vds :

13400pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

FET Feature :

--

Transistor Polarity :

N-Channel

Product :

Power MOSFET Modules

Rds On (Max) @ Id, Vgs :

220m Ω @ 19.5A, 10V

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

375nC @ 10V

Package Shape :

RECTANGULAR

Surface Mount :

No

Mount :

Chassis Mount

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

RoHS :

Details

Power Dissipation-Max :

580W Tc

JESD-30 Code :

R-PUFM-X4

Pulsed Drain Current-Max (IDM) :

154 A

Number of Channels :

1 Channel

Package :

Tube

Drain to Source Voltage (Vdss) :

900V

Current - Continuous Drain (Id) @ 25°C :

34A Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

4

Power Dissipation :

580W

Drain to Source Breakdown Voltage :

900V

Vgs(th) (Max) @ Id :

5V @ 8mA

Tradename :

HyperFET

Power Dissipation (Max) :

580W (Tc)

Packaging :

Tube