IXFE55N50

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Mfr.Part #
IXFE55N50
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 47A SOT-227B
Stock
40,572
In Stock :
40,572

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXFE55
Product :
Power MOSFET Modules
Tradename :
HyperFET
Terminal Position :
UPPER
Series :
HiPerFET™
FET Feature :
--
Number of Terminals :
4
Vgs (Max) :
±20V
Pbfree Code :
yes
Product Category :
Discrete Semiconductor Modules
Supplier Device Package :
SOT-227B
Rise Time :
60ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Package :
Tube
Height :
9.65 mm
Product Status :
Obsolete
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
RoHS Compliant
Transistor Application :
SWITCHING
Brand :
IXYS
Width :
25.42 mm
Mount :
Chassis Mount
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Length :
38.23 mm
Package / Case :
SOT-227-4, miniBLOC
Operating Temperature :
-40°C~150°C TJ
Power Dissipation (Max) :
500W (Tc)
Qualification Status :
Not Qualified
Number of Terminations :
4
Transistor Polarity :
N-Channel
Turn-Off Delay Time :
120 ns
Minimum Operating Temperature :
- 40 C
Product Type :
Discrete Semiconductor Modules
Pin Count :
4
Power Dissipation-Max (Abs) :
500 W
Maximum Operating Temperature :
+ 150 C
Packaging :
Tube
Number of Elements :
1
DS Breakdown Voltage-Min :
500 V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
330nC @ 10V
JESD-30 Code :
R-PUFM-X4
Pulsed Drain Current-Max (IDM) :
200A
Mounting Type :
Chassis Mount
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
47A
Case Connection :
Isolated
Terminal Form :
UNSPECIFIED
Package Shape :
RECTANGULAR
Drain-source On Resistance-Max :
0.09Ohm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On (Max) @ Id, Vgs :
90m Ω @ 27.5A, 10V
Power Dissipation-Max :
500W Tc
Surface Mount :
No
Polarity/Channel Type :
N-Channel
Drain to Source Voltage (Vdss) :
500V
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Drain Current-Max (Abs) (ID) :
47 A
Operating Mode :
ENHANCEMENT MODE
Additional Feature :
AVALANCHE RATED
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Number of Channels :
1 Channel
Current - Continuous Drain (Id) @ 25°C :
47A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
4
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Fall Time (Typ) :
45 ns
Mounting Style :
Chassis Mount
Reach Compliance Code :
Compliant
RoHS :
Details
Published :
2003
Drain to Source Breakdown Voltage :
500V
Manufacturer :
IXYS
Power Dissipation :
500W
Datasheets
IXFE55N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE55N50 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-227-4, miniBLOC, Operating Temperature:-40°C~150°C TJ, Number of Terminations:4, Mounting Type:Chassis Mount, Number of Channels:1 Channel, Number of Pins:4, IXFE55N50 pinout, IXFE55N50 datasheet PDF, IXFE55N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE55N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE55N50


N-Channel Tube 90m Ω @ 27.5A, 10V ±20V 9400pF @ 25V 330nC @ 10V 500V SOT-227-4, miniBLOC

IXFE55N50 Overview


A device's maximum input capacitance is 9400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 47A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 47 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 120 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFE55N50 Features


a continuous drain current (ID) of 47A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 200A.
a 500V drain to source voltage (Vdss)


IXFE55N50 Applications


There are a lot of IXYS
IXFE55N50 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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