IXFE55N50
- Mfr.Part #
- IXFE55N50
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 47A SOT-227B
- Stock
- 40,572
- In Stock :
- 40,572
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXFE55
- Product :
- Power MOSFET Modules
- Tradename :
- HyperFET
- Terminal Position :
- UPPER
- Series :
- HiPerFET™
- FET Feature :
- --
- Number of Terminals :
- 4
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Product Category :
- Discrete Semiconductor Modules
- Supplier Device Package :
- SOT-227B
- Rise Time :
- 60ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package :
- Tube
- Height :
- 9.65 mm
- Product Status :
- Obsolete
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Brand :
- IXYS
- Width :
- 25.42 mm
- Mount :
- Chassis Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 38.23 mm
- Package / Case :
- SOT-227-4, miniBLOC
- Operating Temperature :
- -40°C~150°C TJ
- Power Dissipation (Max) :
- 500W (Tc)
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 4
- Transistor Polarity :
- N-Channel
- Turn-Off Delay Time :
- 120 ns
- Minimum Operating Temperature :
- - 40 C
- Product Type :
- Discrete Semiconductor Modules
- Pin Count :
- 4
- Power Dissipation-Max (Abs) :
- 500 W
- Maximum Operating Temperature :
- + 150 C
- Packaging :
- Tube
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 500 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 330nC @ 10V
- JESD-30 Code :
- R-PUFM-X4
- Pulsed Drain Current-Max (IDM) :
- 200A
- Mounting Type :
- Chassis Mount
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 47A
- Case Connection :
- Isolated
- Terminal Form :
- UNSPECIFIED
- Package Shape :
- RECTANGULAR
- Drain-source On Resistance-Max :
- 0.09Ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 27.5A, 10V
- Power Dissipation-Max :
- 500W Tc
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 500V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 47 A
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Number of Channels :
- 1 Channel
- Current - Continuous Drain (Id) @ 25°C :
- 47A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 4
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Fall Time (Typ) :
- 45 ns
- Mounting Style :
- Chassis Mount
- Reach Compliance Code :
- Compliant
- RoHS :
- Details
- Published :
- 2003
- Drain to Source Breakdown Voltage :
- 500V
- Manufacturer :
- IXYS
- Power Dissipation :
- 500W
- Datasheets
- IXFE55N50

N-Channel Tube 90m Ω @ 27.5A, 10V ±20V 9400pF @ 25V 330nC @ 10V 500V SOT-227-4, miniBLOC
IXFE55N50 Overview
A device's maximum input capacitance is 9400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 47A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 47 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 120 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFE55N50 Features
a continuous drain current (ID) of 47A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 200A.
a 500V drain to source voltage (Vdss)
IXFE55N50 Applications
There are a lot of IXYS
IXFE55N50 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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