IXFE55N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

N-Channel

Width :

25.42 mm

Packaging :

Tube

Rise Time :

60ns

Number of Terminals :

4

Reach Compliance Code :

Compliant

Mounting Style :

Chassis Mount

Drain to Source Voltage (Vdss) :

500V

Mounting Type :

Chassis Mount

FET Feature :

--

Terminal Form :

UNSPECIFIED

Supplier Device Package :

SOT-227B

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Gate to Source Voltage (Vgs) :

20V

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±20V

Product Status :

Obsolete

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Surface Mount :

No

Continuous Drain Current (ID) :

47A

Operating Temperature :

-40°C~150°C TJ

Power Dissipation-Max :

500W Tc

Polarity/Channel Type :

N-Channel

Series :

HiPerFET™

Product Category :

Discrete Semiconductor Modules

Operating Mode :

ENHANCEMENT MODE

Length :

38.23 mm

Tradename :

HyperFET

Transistor Application :

SWITCHING

Brand :

IXYS

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

500 V

JESD-30 Code :

R-PUFM-X4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2003

Fall Time (Typ) :

45 ns

Number of Pins :

4

RoHS :

Details

Power Dissipation-Max (Abs) :

500 W

Drain Current-Max (Abs) (ID) :

47 A

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Qualification Status :

Not Qualified

Package / Case :

SOT-227-4, miniBLOC

Height :

9.65 mm

Minimum Operating Temperature :

- 40 C

Terminal Position :

UPPER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Chassis Mount

Product Type :

Discrete Semiconductor Modules

Manufacturer :

IXYS

Drain to Source Breakdown Voltage :

500V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package :

Tube

Number of Terminations :

4

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

90m Ω @ 27.5A, 10V

Drain-source On Resistance-Max :

0.09Ohm

Number of Channels :

1 Channel

Power Dissipation :

500W

Transistor Element Material :

SILICON

FET Type :

N-Channel

Turn-Off Delay Time :

120 ns

Number of Elements :

1

Product :

Power MOSFET Modules

Power Dissipation (Max) :

500W (Tc)

Pulsed Drain Current-Max (IDM) :

200A

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Base Product Number :

IXFE55

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V