IXFE73N30Q

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Mfr.Part #
IXFE73N30Q
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 300V 66A SOT-227B
Stock
17,344
In Stock :
17,344

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
Isolated
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-30 Code :
R-PUFM-X4
Base Product Number :
IXFE73
Operating Temperature :
-55°C~150°C TJ
Series :
HiPerFET™
Packaging :
Tube
Mounting Type :
Chassis Mount
Fall Time (Typ) :
12 ns
Number of Pins :
4
Terminal Position :
UPPER
DS Breakdown Voltage-Min :
300 V
Tradename :
HyperFET
Polarity/Channel Type :
N-Channel
Product Category :
Discrete Semiconductor Modules
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Vgs (Max) :
±20V
Width :
25.42 mm
Input Capacitance (Ciss) (Max) @ Vds :
6400pF @ 25V
Brand :
IXYS
Drain Current-Max (Abs) (ID) :
66 A
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
RoHS :
Details
Number of Terminals :
4
Product :
Power MOSFET Modules
Power Dissipation-Max (Abs) :
400 W
Rise Time :
36ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage :
300V
Product Type :
Discrete Semiconductor Modules
Number of Terminations :
4
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Channels :
1 Channel
Length :
38.23 mm
Supplier Device Package :
SOT-227B
Rds On (Max) @ Id, Vgs :
46m Ω @ 36.5A, 10V
Transistor Application :
SWITCHING
Qualification Status :
Not Qualified
Vgs(th) (Max) @ Id :
4V @ 4mA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Mounting Style :
Chassis Mount
Minimum Operating Temperature :
- 55 C
Product Status :
Active
Pulsed Drain Current-Max (IDM) :
292A
Avalanche Energy Rating (Eas) :
2500 mJ
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Reach Compliance Code :
Compliant
Current - Continuous Drain (Id) @ 25°C :
66A Tc
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current (ID) :
66A
Terminal Form :
UNSPECIFIED
Height :
9.65 mm
Power Dissipation (Max) :
400W (Tc)
Package :
Tube
Published :
2002
Package / Case :
SOT-227-4, miniBLOC
Drain-source On Resistance-Max :
0.046 Ω
Transistor Polarity :
N-Channel
Pin Count :
4
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Package Shape :
RECTANGULAR
Manufacturer :
IXYS
Mount :
Chassis Mount
Turn-Off Delay Time :
82 ns
Additional Feature :
AVALANCHE RATED
Power Dissipation :
400W
Transistor Element Material :
SILICON
Power Dissipation-Max :
400W Tc
Drain to Source Voltage (Vdss) :
300V
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
FET Feature :
--
Operating Mode :
ENHANCEMENT MODE
Datasheets
IXFE73N30Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE73N30Q from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Chassis Mount, Number of Pins:4, Number of Terminations:4, Number of Channels:1 Channel, Package / Case:SOT-227-4, miniBLOC, IXFE73N30Q pinout, IXFE73N30Q datasheet PDF, IXFE73N30Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE73N30Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE73N30Q


N-Channel Tube 46m Ω @ 36.5A, 10V ±20V 6400pF @ 25V 190nC @ 10V 300V SOT-227-4, miniBLOC

IXFE73N30Q Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 66A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 300V, and this device has a drainage-to-source breakdown voltage of 300VV.Drain current refers to the maximum continuous current a device can conduct, and it is 66 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 82 ns.Peak drain current is 292A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 300 V.For this transistor to work, a voltage 300V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFE73N30Q Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 66A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 292A.
a 300V drain to source voltage (Vdss)


IXFE73N30Q Applications


There are a lot of IXYS
IXFE73N30Q applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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