IXFE73N30Q
- Mfr.Part #
- IXFE73N30Q
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 66A SOT-227B
- Stock
- 17,344
- In Stock :
- 17,344
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- SOT-227-4, miniBLOC
- Surface Mount :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Polarity/Channel Type :
- N-Channel
- Mount :
- Chassis Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- RECTANGULAR
- Tradename :
- HyperFET
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 36ns
- Power Dissipation :
- 400W
- Maximum Operating Temperature :
- + 150 C
- Drain-source On Resistance-Max :
- 0.046 Ω
- Input Capacitance (Ciss) (Max) @ Vds :
- 6400pF @ 25V
- Number of Channels :
- 1 Channel
- Pulsed Drain Current-Max (IDM) :
- 292A
- Transistor Application :
- SWITCHING
- Manufacturer :
- IXYS
- DS Breakdown Voltage-Min :
- 300 V
- Turn-Off Delay Time :
- 82 ns
- Pin Count :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 4
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Transistor Element Material :
- SILICON
- Product Category :
- Discrete Semiconductor Modules
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- RoHS :
- Details
- Drain to Source Breakdown Voltage :
- 300V
- Rds On (Max) @ Id, Vgs :
- 46m Ω @ 36.5A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Brand :
- IXYS
- Length :
- 38.23 mm
- Fall Time (Typ) :
- 12 ns
- Pbfree Code :
- yes
- Terminal Position :
- UPPER
- Height :
- 9.65 mm
- ECCN Code :
- EAR99
- Power Dissipation (Max) :
- 400W (Tc)
- Transistor Polarity :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- FET Feature :
- --
- Supplier Device Package :
- SOT-227B
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2002
- Drain Current-Max (Abs) (ID) :
- 66 A
- Current - Continuous Drain (Id) @ 25°C :
- 66A Tc
- Mounting Type :
- Chassis Mount
- Drain to Source Voltage (Vdss) :
- 300V
- Product Type :
- Discrete Semiconductor Modules
- Number of Terminals :
- 4
- Case Connection :
- Isolated
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation-Max (Abs) :
- 400 W
- Package :
- Tube
- Terminal Form :
- UNSPECIFIED
- JESD-30 Code :
- R-PUFM-X4
- Vgs (Max) :
- ±20V
- Base Product Number :
- IXFE73
- Mounting Style :
- Chassis Mount
- Continuous Drain Current (ID) :
- 66A
- Power Dissipation-Max :
- 400W Tc
- Width :
- 25.42 mm
- Series :
- HiPerFET™
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Qualification Status :
- Not Qualified
- Product Status :
- Active
- Product :
- Power MOSFET Modules
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Datasheets
- IXFE73N30Q

N-Channel Tube 46m Ω @ 36.5A, 10V ±20V 6400pF @ 25V 190nC @ 10V 300V SOT-227-4, miniBLOC
IXFE73N30Q Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 66A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 300V, and this device has a drainage-to-source breakdown voltage of 300VV.Drain current refers to the maximum continuous current a device can conduct, and it is 66 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 82 ns.Peak drain current is 292A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 300 V.For this transistor to work, a voltage 300V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFE73N30Q Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 66A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 292A.
a 300V drain to source voltage (Vdss)
IXFE73N30Q Applications
There are a lot of IXYS
IXFE73N30Q applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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