IXFE73N30Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

UNSPECIFIED

Supplier Device Package :

SOT-227B

Product Status :

Active

Mount :

Chassis Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Qualification Status :

Not Qualified

FET Feature :

--

Power Dissipation-Max :

400W Tc

Drain to Source Breakdown Voltage :

300V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Power Dissipation (Max) :

400W (Tc)

Package :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Maximum Operating Temperature :

+ 150 C

Transistor Element Material :

SILICON

Series :

HiPerFET™

Pulsed Drain Current-Max (IDM) :

292A

FET Type :

N-Channel

JESD-30 Code :

R-PUFM-X4

Published :

2002

Reach Compliance Code :

Compliant

Power Dissipation :

400W

Package / Case :

SOT-227-4, miniBLOC

Tradename :

HyperFET

Length :

38.23 mm

Terminal Position :

UPPER

Mounting Style :

Chassis Mount

Brand :

IXYS

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Rise Time :

36ns

Drain Current-Max (Abs) (ID) :

66 A

DS Breakdown Voltage-Min :

300 V

Input Capacitance (Ciss) (Max) @ Vds :

6400pF @ 25V

Continuous Drain Current (ID) :

66A

Power Dissipation-Max (Abs) :

400 W

Base Product Number :

IXFE73

Turn-Off Delay Time :

82 ns

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

300V

Number of Channels :

1 Channel

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

46m Ω @ 36.5A, 10V

Fall Time (Typ) :

12 ns

Package Shape :

RECTANGULAR

Pin Count :

4

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Mounting Type :

Chassis Mount

Polarity/Channel Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 4mA

Number of Elements :

1

Drain-source On Resistance-Max :

0.046 Ω

Height :

9.65 mm

Packaging :

Tube

RoHS :

Details

Product :

Power MOSFET Modules

Width :

25.42 mm

Product Type :

Discrete Semiconductor Modules

Product Category :

Discrete Semiconductor Modules

Avalanche Energy Rating (Eas) :

2500 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Transistor Polarity :

N-Channel

Manufacturer :

IXYS

Number of Terminals :

4

Transistor Application :

SWITCHING

Minimum Operating Temperature :

- 55 C

Current - Continuous Drain (Id) @ 25°C :

66A Tc

Number of Pins :

4