MJD2955
- Mfr.Part #
- MJD2955
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 60V 10A DPAK
- Stock
- 28,933
- In Stock :
- 28,933
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Frequency :
- 2MHz
- Collector Emitter Saturation Voltage :
- 1.1V
- Gain Bandwidth Product :
- 2MHz
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- -10A
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 20
- Current - Collector Cutoff (Max) :
- 50μA
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Width :
- 6.223mm
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Published :
- 2002
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 70V
- Max Collector Current :
- 10A
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- Pin Count :
- 3
- Number of Pins :
- 3
- Number of Terminations :
- 2
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Power Dissipation :
- 1.75W
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Pbfree Code :
- yes
- Height :
- 2.3876mm
- Base Part Number :
- MJD2955
- Max Power Dissipation :
- 1.75W
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 2MHz
- Length :
- 6.7056mm
- Factory Lead Time :
- 8 Weeks
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -60V
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MJD2955

PNP -55°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
MJD2955G Overview
In this device, the DC current gain is 20 @ 4A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 8V @ 3.3A, 10A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
MJD2955G Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 2MHz
MJD2955G Applications
There are a lot of ON Semiconductor
MJD2955G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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