MJD2955

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Mfr.Part #
MJD2955
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 60V 10A DPAK
Stock
28,933
In Stock :
28,933

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
REACH SVHC :
No SVHC
Lead Free :
Lead Free
JESD-30 Code :
R-PSSO-G2
Frequency :
2MHz
Collector Emitter Saturation Voltage :
1.1V
Gain Bandwidth Product :
2MHz
Peak Reflow Temperature (Cel) :
260
Current Rating :
-10A
Operating Temperature :
-55°C~150°C TJ
hFE Min :
20
Current - Collector Cutoff (Max) :
50μA
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Width :
6.223mm
Radiation Hardening :
No
Transistor Type :
PNP
JESD-609 Code :
e3
Published :
2002
Terminal Finish :
Tin (Sn)
Collector Base Voltage (VCBO) :
70V
Max Collector Current :
10A
Terminal Form :
Gull wing
Vce Saturation (Max) @ Ib, Ic :
8V @ 3.3A, 10A
Pin Count :
3
Number of Pins :
3
Number of Terminations :
2
Collector Emitter Voltage (VCEO) :
60V
Emitter Base Voltage (VEBO) :
5V
Element Configuration :
Single
Power Dissipation :
1.75W
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 4A 4V
Pbfree Code :
yes
Height :
2.3876mm
Base Part Number :
MJD2955
Max Power Dissipation :
1.75W
Polarity/Channel Type :
PNP
Transition Frequency :
2MHz
Length :
6.7056mm
Factory Lead Time :
8 Weeks
Transistor Element Material :
SILICON
Transistor Application :
AMPLIFIER
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount :
yes
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Collector Emitter Breakdown Voltage :
60V
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Voltage - Rated DC :
-60V
Case Connection :
COLLECTOR
Time@Peak Reflow Temperature-Max (s) :
40
Datasheets
MJD2955
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD2955 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:2, Base Part Number:MJD2955, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, MJD2955 pinout, MJD2955 datasheet PDF, MJD2955 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD2955 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD2955


PNP -55°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount

MJD2955G Overview


In this device, the DC current gain is 20 @ 4A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 8V @ 3.3A, 10A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.

MJD2955G Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 2MHz


MJD2955G Applications


There are a lot of ON Semiconductor
MJD2955G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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