MJD200T4G
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- Mfr.Part #
- MJD200T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 25V 5A DPAK
- Stock
- 645
- In Stock ：
- 645
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 65MHz
- Transistor Application :
- AMPLIFIER
- Max Breakdown Voltage :
- 25V
- Power Dissipation :
- 1.4W
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount :
- yes
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 65MHz
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 25V
- Frequency :
- 65MHz
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 12.5W
- Voltage - Rated DC :
- 25V
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Current Rating :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Published :
- 2006
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 40V
- Emitter Base Voltage (VEBO) :
- 8V
- Collector Emitter Breakdown Voltage :
- 25V
- Base Part Number :
- MJD200
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Case Connection :
- COLLECTOR
- hFE Min :
- 70
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 1.8V
- Factory Lead Time :
- 5 Weeks
- Max Collector Current :
- 5A
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Pin Count :
- 3
- Datasheets
- MJD200T4G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD200T4G Overview
In this device, the DC current gain is 45 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1A, 5A.With the emitter base voltage set at 8V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 65MHz.Input voltage breakdown is available at 25V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
MJD200T4G Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJD200T4G Applications
There are a lot of ON Semiconductor
MJD200T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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