MJD210TF
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- Mfr.Part #
- MJD210TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 25V 5A DPAK
- Stock
- 4,000
- In Stock ：
- 4,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current Rating :
- -5A
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Max Power Dissipation :
- 1.4W
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Published :
- 2014
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Weight :
- 260.37mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Transition Frequency :
- 65MHz
- JESD-30 Code :
- R-PSSO-G2
- Gain Bandwidth Product :
- 65MHz
- Frequency :
- 65MHz
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- -40V
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 25V
- Power Dissipation :
- 1.4W
- Emitter Base Voltage (VEBO) :
- -8V
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 25V
- Collector Emitter Breakdown Voltage :
- 25V
- Max Collector Current :
- 5A
- Base Part Number :
- MJD210
- Number of Pins :
- 3
- Number of Elements :
- 1
- hFE Min :
- 45
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 6 Weeks
- Voltage - Rated DC :
- -40V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Datasheets
- MJD210TF
PNP 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD210TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 45 @ 2A 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 1A, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -8V.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 65MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 5A volts.
MJD210TF Features
the DC current gain for this device is 45 @ 2A 1V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
the current rating of this device is -5A
a transition frequency of 65MHz
MJD210TF Applications
There are a lot of ON Semiconductor
MJD210TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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