MJD210TF
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- Mfr.Part #
- MJD210TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 25V 5A DPAK
- Stock
- 12,407
- In Stock ：
- 12,407
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 65MHz
- Emitter Base Voltage (VEBO) :
- -8V
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Frequency :
- 65MHz
- Weight :
- 260.37mg
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 45
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Current Rating :
- -5A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 25V
- Voltage - Rated DC :
- -40V
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 2
- Factory Lead Time :
- 6 Weeks
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2014
- Transistor Type :
- PNP
- Power Dissipation :
- 1.4W
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 25V
- Collector Emitter Voltage (VCEO) :
- 25V
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- -40V
- Max Collector Current :
- 5A
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Max Power Dissipation :
- 1.4W
- Base Part Number :
- MJD210
- Number of Elements :
- 1
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 65MHz
- Radiation Hardening :
- No
- Datasheets
- MJD210TF
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PNP 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD210TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 45 @ 2A 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 1A, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -8V.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 65MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 5A volts.
MJD210TF Features
the DC current gain for this device is 45 @ 2A 1V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
the current rating of this device is -5A
a transition frequency of 65MHz
MJD210TF Applications
There are a lot of ON Semiconductor
MJD210TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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