MJD200

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Collector Emitter Breakdown Voltage :

25V

Operating Temperature :

-65°C~150°C TJ

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Application :

AMPLIFIER

RoHS Status :

Non-RoHS Compliant

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Pbfree Code :

No

Current Rating :

5A

Packaging :

Tube

hFE Min :

70

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1A, 5A

JESD-30 Code :

R-PSSO-G2

Collector Base Voltage (VCBO) :

40V

Terminal Form :

Gull wing

Collector Emitter Saturation Voltage :

1.8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

65MHz

Transition Frequency :

65MHz

Case Connection :

COLLECTOR

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Contains Lead

Emitter Base Voltage (VEBO) :

8V

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

Qualification Status :

Not Qualified

JESD-609 Code :

e0

HTS Code :

8541.29.00.95

Max Collector Current :

5A

Number of Terminations :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 2A 1V

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Type :

NPN

Base Part Number :

MJD200

Pin Count :

3

Max Power Dissipation :

1.4W

Element Configuration :

Single

ECCN Code :

EAR99

Voltage - Rated DC :

25V

Collector Emitter Voltage (VCEO) :

25V

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

240

Mount :

Surface Mount

Published :

2006