MJD210TF
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- Mfr.Part #
- MJD210TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 25V 5A DPAK
- Stock
- 14,921
- In Stock ：
- 14,921
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 25V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 25V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Power Dissipation :
- 1.4W
- Frequency :
- 65MHz
- Collector Base Voltage (VCBO) :
- -40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Factory Lead Time :
- 6 Weeks
- Pbfree Code :
- yes
- Max Collector Current :
- 5A
- Lead Free :
- Lead Free
- Weight :
- 260.37mg
- Published :
- 2014
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 65MHz
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 65MHz
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 25V
- Base Part Number :
- MJD210
- hFE Min :
- 45
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- -8V
- Number of Terminations :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 1.4W
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Current Rating :
- -5A
- Voltage - Rated DC :
- -40V
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- MJD210TF
PNP 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD210TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 45 @ 2A 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 1A, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -8V.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 65MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 5A volts.
MJD210TF Features
the DC current gain for this device is 45 @ 2A 1V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
the current rating of this device is -5A
a transition frequency of 65MHz
MJD210TF Applications
There are a lot of ON Semiconductor
MJD210TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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