MJD243

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Mfr.Part #
MJD243
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 100V 4A DPAK
Stock
13,640
In Stock :
13,640

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Weight :
4.535924g
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 200mA 1V
Current - Collector Cutoff (Max) :
100nA ICBO
REACH SVHC :
No SVHC
Transistor Application :
AMPLIFIER
Collector Emitter Saturation Voltage :
600mV
Radiation Hardening :
No
JESD-609 Code :
e3
Height :
6.35mm
Current Rating :
4A
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Mounting Type :
Surface Mount
Number of Terminations :
2
Number of Pins :
3
Terminal Form :
Gull wing
Terminal Finish :
Tin (Sn)
Pin Count :
3
Polarity/Channel Type :
NPN
Power Dissipation :
1.4W
Operating Temperature :
-65°C~150°C TJ
Published :
2007
Collector Base Voltage (VCBO) :
100V
Voltage - Rated DC :
100V
Pbfree Code :
yes
Factory Lead Time :
8 Weeks
Frequency :
40MHz
hFE Min :
40
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
RoHS Status :
ROHS3 Compliant
Collector Emitter Voltage (VCEO) :
100V
Transition Frequency :
40MHz
Packaging :
Tube
Vce Saturation (Max) @ Ib, Ic :
600mV @ 100mA, 1A
ECCN Code :
EAR99
Length :
6.35mm
JESD-30 Code :
R-PSSO-G2
Emitter Base Voltage (VEBO) :
7V
Width :
6.35mm
Element Configuration :
Single
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
40
Case Connection :
COLLECTOR
Collector Emitter Breakdown Voltage :
100V
Max Collector Current :
4A
Halogen Free :
Halogen Free
Number of Elements :
1
Surface Mount :
yes
Transistor Type :
NPN
Max Power Dissipation :
1.4W
Gain Bandwidth Product :
40MHz
Base Part Number :
MJD243
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
MJD243
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD243 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Base Part Number:MJD243, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, MJD243 pinout, MJD243 datasheet PDF, MJD243 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD243 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD243


NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount

MJD243G Overview


In this device, the DC current gain is 40 @ 200mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).40MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

MJD243G Features


the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz


MJD243G Applications


There are a lot of ON Semiconductor
MJD243G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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