MJD200T4
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- Mfr.Part #
- MJD200T4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PWR NPN 5A 25V DPAK
- Stock
- 1,348
- In Stock ：
- 1,348
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 5 Weeks
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 25V
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 25V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 5A
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-30 Code :
- R-PSSO-G2
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Collector Emitter Saturation Voltage :
- 1.8V
- Pin Count :
- 3
- Max Power Dissipation :
- 12.5W
- Base Part Number :
- MJD200
- hFE Min :
- 70
- Power Dissipation :
- 1.4W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 25V
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 25V
- Published :
- 2006
- Operating Temperature :
- -65°C~150°C TJ
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 65MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 5A
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Frequency :
- 65MHz
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 2
- Transition Frequency :
- 65MHz
- Surface Mount :
- yes
- Emitter Base Voltage (VEBO) :
- 8V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 40V
- Terminal Form :
- Gull wing
- Datasheets
- MJD200T4
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD200T4G Overview
In this device, the DC current gain is 45 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1A, 5A.With the emitter base voltage set at 8V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 65MHz.Input voltage breakdown is available at 25V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
MJD200T4G Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJD200T4G Applications
There are a lot of ON Semiconductor
MJD200T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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