MJD210RLG
- Mfr.Part #
- MJD210RLG
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 25V 5A DPAK
- Stock
- 18
- In Stock :
- 18
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- MJD210
- Operating Temperature :
- -65°C~150°C TJ
- Surface Mount :
- yes
- Number of Terminations :
- 2
- Max Breakdown Voltage :
- 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Length :
- 6.73mm
- Frequency :
- 65MHz
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 40V
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Height :
- 2.38mm
- Gain Bandwidth Product :
- 65MHz
- Pin Count :
- 3
- Power Dissipation :
- 1.4W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Collector Emitter Breakdown Voltage :
- 40V
- Current Rating :
- -5A
- Polarity :
- PNP, NPN
- Collector Emitter Voltage (VCEO) :
- 25V
- Max Collector Current :
- 5A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 70
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 12.5W
- Published :
- 2005
- Transition Frequency :
- 65MHz
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 8V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -25V
- Factory Lead Time :
- 8 Weeks
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 1.8V
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Width :
- 6.22mm
- Datasheets
- MJD210RLG

PNP -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD210RLG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 45 @ 2A 1V.The collector emitter saturation voltage is 1.8V, which allows for maximum design flexibility.When VCE saturation is 1.8V @ 1A, 5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 8V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -5A.In the part, the transition frequency is 65MHz.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 5A volts can be achieved.
MJD210RLG Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is -5A
a transition frequency of 65MHz
MJD210RLG Applications
There are a lot of ON Semiconductor
MJD210RLG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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