MJD210G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

5A

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

3

Published :

2006

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

25V

Element Configuration :

Single

Width :

6.223mm

Length :

6.7056mm

Radiation Hardening :

No

Lead Free :

Lead Free

hFE Min :

70

Collector Base Voltage (VCBO) :

40V

Current Rating :

-5A

Transistor Application :

AMPLIFIER

Surface Mount :

yes

Transistor Element Material :

SILICON

Transition Frequency :

65MHz

Max Power Dissipation :

1.4W

Power Dissipation :

1.4W

Base Part Number :

MJD210

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1A, 5A

Voltage - Rated DC :

-25V

Collector Emitter Saturation Voltage :

1.8V

Factory Lead Time :

8 Weeks

Collector Emitter Breakdown Voltage :

25V

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 2A 1V

Emitter Base Voltage (VEBO) :

8V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

REACH SVHC :

No SVHC

Height :

2.3876mm

ECCN Code :

EAR99

Contact Plating :

Tin

Mounting Type :

Surface Mount

Operating Temperature :

-65°C~150°C TJ

Polarity/Channel Type :

PNP

Number of Elements :

1

Number of Terminations :

2

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Form :

Gull wing

Gain Bandwidth Product :

65MHz

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

4.535924g

Packaging :

Tube

Frequency :

65MHz

Case Connection :

COLLECTOR