MJD200RLG
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- Mfr.Part #
- MJD200RLG
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 25V 5A DPAK
- Stock
- 10,334
- In Stock ：
- 10,334
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Transistor Type :
- NPN
- JESD-30 Code :
- R-PSSO-G2
- Transition Frequency :
- 65MHz
- Max Collector Current :
- 5A
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Transistor Application :
- AMPLIFIER
- Max Breakdown Voltage :
- 25V
- Collector Emitter Saturation Voltage :
- 1.8V
- Emitter Base Voltage (VEBO) :
- 8V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 70
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Frequency :
- 65MHz
- Case Connection :
- COLLECTOR
- Base Part Number :
- MJD200
- Collector Emitter Breakdown Voltage :
- 25V
- Published :
- 2006
- Voltage - Rated DC :
- 25V
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Operating Temperature :
- -65°C~150°C TJ
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 25V
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 2
- Surface Mount :
- yes
- Number of Pins :
- 3
- Power Dissipation :
- 1.4W
- Factory Lead Time :
- 8 Weeks
- Current Rating :
- 5A
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 65MHz
- Collector Base Voltage (VCBO) :
- 40V
- Max Power Dissipation :
- 1.4W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Packaging :
- Tape and Reel (TR)
- Datasheets
- MJD200RLG
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD200RLG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 45 @ 2A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.8V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 1A, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 65MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 5A volts.
MJD200RLG Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJD200RLG Applications
There are a lot of ON Semiconductor
MJD200RLG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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