MJD210T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

65MHz

Width :

6.22mm

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Number of Pins :

3

Number of Terminations :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 2A 1V

Max Breakdown Voltage :

25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gain Bandwidth Product :

65MHz

Number of Elements :

1

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

25V

Packaging :

Tape and Reel (TR)

Published :

2006

Current - Collector Cutoff (Max) :

100nA ICBO

hFE Min :

70

Height :

2.38mm

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

MJD210

Element Configuration :

Single

Operating Temperature :

-65°C~150°C TJ

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

5A

Emitter Base Voltage (VEBO) :

8V

Polarity/Channel Type :

PNP

RoHS Status :

ROHS3 Compliant

Length :

6.73mm

REACH SVHC :

No SVHC

Pin Count :

3

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

40V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1A, 5A

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

1.8V

Collector Emitter Breakdown Voltage :

25V

Transistor Application :

AMPLIFIER

Max Power Dissipation :

1.4W

Terminal Form :

Gull wing

Current Rating :

-5A

Transition Frequency :

65MHz

Power Dissipation :

1.4W

JESD-609 Code :

e3

Transistor Type :

PNP

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Voltage - Rated DC :

-25V