MJD200G

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Mfr.Part #
MJD200G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 25V 5A DPAK
Stock
26,326
In Stock :
26,326

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Current - Collector Cutoff (Max) :
100nA ICBO
Contact Plating :
Tin
Current Rating :
5A
Transistor Application :
AMPLIFIER
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Max Power Dissipation :
1.4W
Case Connection :
COLLECTOR
REACH SVHC :
No SVHC
Pbfree Code :
yes
Element Configuration :
Single
Collector Emitter Saturation Voltage :
1.8V
Lead Free :
Lead Free
Operating Temperature :
-65°C~150°C TJ
Transition Frequency :
65MHz
Transistor Element Material :
SILICON
Factory Lead Time :
2 Weeks
Voltage - Rated DC :
25V
Width :
6.22mm
Packaging :
Tube
Mounting Type :
Surface Mount
Emitter Base Voltage (VEBO) :
8V
DC Current Gain (hFE) (Min) @ Ic, Vce :
45 @ 2A 1V
Number of Pins :
3
JESD-609 Code :
e3
Collector Emitter Breakdown Voltage :
25V
Lifecycle Status :
ACTIVE (Last Updated: 17 hours ago)
Surface Mount :
yes
Height :
2.38mm
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
NPN
Length :
6.73mm
JESD-30 Code :
R-PSSO-G2
Pin Count :
3
Power Dissipation :
1.4W
Peak Reflow Temperature (Cel) :
260
Published :
2006
Number of Elements :
1
ECCN Code :
EAR99
Max Collector Current :
5A
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Collector Emitter Voltage (VCEO) :
25V
Frequency :
65MHz
Gain Bandwidth Product :
65MHz
Collector Base Voltage (VCBO) :
40V
Vce Saturation (Max) @ Ib, Ic :
1.8V @ 1A, 5A
hFE Min :
70
Number of Terminations :
2
Time@Peak Reflow Temperature-Max (s) :
40
Base Part Number :
MJD200
Radiation Hardening :
No
Datasheets
MJD200G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD200G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Base Part Number:MJD200, MJD200G pinout, MJD200G datasheet PDF, MJD200G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD200G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD200G


NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount

MJD200G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 45 @ 2A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.8V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.8V @ 1A, 5A.The emitter base voltage can be kept at 8V for high efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 65MHz.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

MJD200G Features


the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz


MJD200G Applications


There are a lot of ON Semiconductor
MJD200G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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