MJD200G
- Mfr.Part #
- MJD200G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 25V 5A DPAK
- Stock
- 26,326
- In Stock :
- 26,326
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Contact Plating :
- Tin
- Current Rating :
- 5A
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 1.4W
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1.8V
- Lead Free :
- Lead Free
- Operating Temperature :
- -65°C~150°C TJ
- Transition Frequency :
- 65MHz
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 2 Weeks
- Voltage - Rated DC :
- 25V
- Width :
- 6.22mm
- Packaging :
- Tube
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 8V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Surface Mount :
- yes
- Height :
- 2.38mm
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Length :
- 6.73mm
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 3
- Power Dissipation :
- 1.4W
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2006
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Max Collector Current :
- 5A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Voltage (VCEO) :
- 25V
- Frequency :
- 65MHz
- Gain Bandwidth Product :
- 65MHz
- Collector Base Voltage (VCBO) :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- hFE Min :
- 70
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- MJD200
- Radiation Hardening :
- No
- Datasheets
- MJD200G

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
MJD200G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 45 @ 2A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.8V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.8V @ 1A, 5A.The emitter base voltage can be kept at 8V for high efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 65MHz.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
MJD200G Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJD200G Applications
There are a lot of ON Semiconductor
MJD200G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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