MJD210T4

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

25V

Gain Bandwidth Product :

65MHz

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Radiation Hardening :

No

Base Part Number :

MJD210

Frequency :

65MHz

Element Configuration :

Single

Max Collector Current :

5A

hFE Min :

70

Surface Mount :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2006

Transistor Type :

PNP

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 2A 1V

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1A, 5A

Width :

6.22mm

Voltage - Rated DC :

-25V

Power Dissipation :

1.4W

Lead Free :

Lead Free

JESD-609 Code :

e3

Number of Elements :

1

Max Breakdown Voltage :

25V

Number of Terminations :

2

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Max Power Dissipation :

1.4W

Operating Temperature :

-65°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Current Rating :

-5A

Collector Base Voltage (VCBO) :

40V

Height :

2.38mm

Pin Count :

3

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Transition Frequency :

65MHz

Transistor Application :

AMPLIFIER

Length :

6.73mm

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

PNP

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Breakdown Voltage :

25V

Emitter Base Voltage (VEBO) :

8V

Packaging :

Tape and Reel (TR)

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Collector Emitter Saturation Voltage :

1.8V