MMBT3906-7-F
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- Mfr.Part #
- MMBT3906-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT23-3
- Stock
- 4,323
- In Stock ：
- 4,323
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 300mW
- Collector Emitter Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Transition Frequency :
- 250MHz
- Current Rating :
- -200mA
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -400mV
- Base Part Number :
- MMBT3906
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Published :
- 2008
- Width :
- 1.4mm
- Height :
- 1mm
- Frequency :
- 250MHz
- Length :
- 3.05mm
- Voltage - Rated DC :
- -40V
- Gain Bandwidth Product :
- 250MHz
- Weight :
- 7.994566mg
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Continuous Collector Current :
- -200mA
- Series :
- Automotive, AEC-Q101
- hFE Min :
- 100
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 40V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 300mW
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- PNP
- Turn On Time-Max (ton) :
- 70ns
- Max Breakdown Voltage :
- 40V
- Additional Feature :
- High Reliability
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 40V
- Max Collector Current :
- 200mA
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- MMBT3906-7-F
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3906-7-F Overview
MMBT3906-7-F is a type of bipolar transistor. The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is essential to maintain the continuous collector voltage at -200mA to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.The current rating of this fuse is -200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.250MHz is present in the transition frequency.There is a breakdown input voltage of 40V volts that it can take.A maximum collector current of 200mA volts can be achieved.
MMBT3906-7-F Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is -200mA
a transition frequency of 250MHz
MMBT3906-7-F Applications
There are a lot of Diodes Incorporated MMBT3906-7-F applications of single BJT transistors.
-
Interface
-
Muting
-
Inverter
-
Driver
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