MMBT2131T1G
- Mfr.Part #
- MMBT2131T1G
- Manufacturer
- onsemi
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.7A SC74
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Power - Max :
- 342mW
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -40V
- Number of Pins :
- 6
- Package / Case :
- SC-74, SOT-457
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2006
- Number of Elements :
- 1
- Number of Terminations :
- 6
- Collector Emitter Saturation Voltage :
- 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Pin Count :
- 6
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 342mW
- Power Dissipation :
- 665mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 3V
- Radiation Hardening :
- No
- hFE Min :
- 150
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 700mA
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 30V
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 40V
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- -700mA
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 70mA, 700mA
- Factory Lead Time :
- 2 Weeks
- Datasheets
- MMBT2131T1G

PNP -55°C~150°C TJ 1μA ICBO 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
MMBT2131T1G Overview
In this device, the DC current gain is 150 @ 100mA 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 70mA, 700mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -700mA for this device.Single BJT transistor is possible for the collector current to fall as low as 700mA volts at Single BJT transistors maximum.
MMBT2131T1G Features
the DC current gain for this device is 150 @ 100mA 3V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 400mV @ 70mA, 700mA
the emitter base voltage is kept at 5V
the current rating of this device is -700mA
MMBT2131T1G Applications
There are a lot of ON Semiconductor
MMBT2131T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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