MMBT2131T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

Dual

Package / Case :

SC-74, SOT-457

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 100mA 3V

Collector Emitter Voltage (VCEO) :

30V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Power - Max :

342mW

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

400mV @ 70mA, 700mA

hFE Min :

150

Collector Emitter Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

40V

Max Power Dissipation :

342mW

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6

Published :

2006

Current - Collector Cutoff (Max) :

1μA ICBO

JESD-609 Code :

e3

Max Collector Current :

700mA

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

PNP

Pin Count :

6

Pbfree Code :

yes

Transistor Type :

PNP

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

6

Factory Lead Time :

2 Weeks

Voltage - Rated DC :

-40V

Power Dissipation :

665mW

Number of Elements :

1

Surface Mount :

yes

Current Rating :

-700mA

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

1V

Operating Temperature :

-55°C~150°C TJ