MMBT2131T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Finish :

Tin (Sn)

Power - Max :

342mW

Polarity/Channel Type :

PNP

Voltage - Rated DC :

-40V

Number of Pins :

6

Package / Case :

SC-74, SOT-457

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

30V

Peak Reflow Temperature (Cel) :

260

Published :

2006

Number of Elements :

1

Number of Terminations :

6

Collector Emitter Saturation Voltage :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Terminal Form :

Gull wing

Surface Mount :

yes

Pin Count :

6

Emitter Base Voltage (VEBO) :

5V

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Element Configuration :

Single

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Max Power Dissipation :

342mW

Power Dissipation :

665mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 100mA 3V

Radiation Hardening :

No

hFE Min :

150

Pbfree Code :

yes

Transistor Element Material :

SILICON

Max Collector Current :

700mA

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

30V

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

1μA ICBO

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

40V

Transistor Type :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

-700mA

Vce Saturation (Max) @ Ib, Ic :

400mV @ 70mA, 700mA

Factory Lead Time :

2 Weeks