MMBT2131T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

342mW

Collector Emitter Breakdown Voltage :

30V

Transistor Type :

PNP

Factory Lead Time :

2 Weeks

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

hFE Min :

150

Surface Mount :

yes

Voltage - Rated DC :

-40V

ECCN Code :

EAR99

Published :

2006

Polarity/Channel Type :

PNP

Max Collector Current :

700mA

Current - Collector Cutoff (Max) :

1μA ICBO

Max Power Dissipation :

342mW

Collector Emitter Saturation Voltage :

1V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Number of Pins :

6

Power Dissipation :

665mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 100mA 3V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 70mA, 700mA

Current Rating :

-700mA

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

JESD-609 Code :

e3

Element Configuration :

Single

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

40V

Pin Count :

6

Terminal Position :

Dual

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

30V

Radiation Hardening :

No

Package / Case :

SC-74, SOT-457

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1