MMBT200

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

350mW

hFE Min :

100

JESD-609 Code :

e3

Transistor Type :

PNP

Collector Emitter Saturation Voltage :

-200mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2017

Base Part Number :

MMBT200

Transition Frequency :

250MHz

Terminal Form :

Gull wing

Height :

930μm

Mounting Type :

Surface Mount

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

50nA

Voltage - Rated DC :

-45V

ECCN Code :

EAR99

Max Collector Current :

500mA

Lead Free :

Lead Free

Element Configuration :

Single

Max Breakdown Voltage :

45V

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

45V

RoHS Status :

ROHS3 Compliant

Width :

1.3mm

Current Rating :

-500mA

Factory Lead Time :

39 Weeks

Power Dissipation :

350mW

Number of Pins :

3

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

-6V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 5V

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Weight :

30mg

Gain Bandwidth Product :

250MHz

Collector Emitter Voltage (VCEO) :

45V

Transistor Application :

AMPLIFIER

Length :

2.92mm

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Frequency :

250MHz

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Vce Saturation (Max) @ Ib, Ic :

400mV @ 20mA, 200mA

Terminal Position :

Dual

Polarity/Channel Type :

PNP

Collector Base Voltage (VCBO) :

-60V