MMBT2222A

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

1V

Factory Lead Time :

10 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

300mW

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

40V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10mV

Current - Collector Cutoff (Max) :

10nA

Number of Terminations :

3

Published :

2011

Transistor Type :

NPN

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transition Frequency :

300MHz

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G3

Max Collector Current :

600mA

Turn Off Time-Max (toff) :

285ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Max Power Dissipation :

225mW

Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Turn On Time-Max (ton) :

35ns

Frequency - Transition :

300MHz

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Polarity/Channel Type :

NPN