MMBT2222A

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

300mW

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10mV

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Max Power Dissipation :

225mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

1V

JESD-609 Code :

e3

Turn On Time-Max (ton) :

35ns

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Turn Off Time-Max (toff) :

285ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Breakdown Voltage :

40V

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Published :

2011

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

300MHz

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

10nA

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G3

Max Collector Current :

600mA

Configuration :

Single

Number of Terminations :

3

Transistor Type :

NPN

Frequency - Transition :

300MHz

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED