MMBT100

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

3

Factory Lead Time :

39 Weeks

Packaging :

Tape and Reel (TR)

Transistor Application :

AMPLIFIER

Frequency :

250MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

6V

Contact Plating :

Tin

Base Part Number :

MMBT100

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

350mW

Element Configuration :

Single

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

45V

Current - Collector Cutoff (Max) :

50nA

Voltage - Rated DC :

45V

Max Power Dissipation :

350mW

hFE Min :

100

Collector Emitter Saturation Voltage :

400mV

Collector Emitter Breakdown Voltage :

45V

Max Breakdown Voltage :

45V

Collector-Base Capacitance-Max :

4.5pF

Current Rating :

500mA

Length :

2.9mm

Transistor Element Material :

SILICON

Weight :

30mg

Terminal Position :

Dual

Polarity/Channel Type :

NPN

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

400mV @ 20mA, 200mA

Max Collector Current :

500mA

Collector Base Voltage (VCBO) :

75V

Transition Frequency :

250MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Width :

1.3mm

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 5V

Number of Elements :

1

Lead Free :

Lead Free

Gain Bandwidth Product :

250MHz

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Published :

2008

Height :

970μm

Transistor Type :

NPN

VCEsat-Max :

0.2 V