MMBT3904,215
- Mfr.Part #
- MMBT3904,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A TO236AB
- Stock
- 81,244
- In Stock :
- 81,244
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 200mV
- Surface Mount :
- yes
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Turn Off Time-Max (toff) :
- 250ns
- Mounting Type :
- Surface Mount
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Turn On Time-Max (ton) :
- 70ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 300MHz
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Height :
- 1.1mm
- Base Part Number :
- MMBT3904
- Transistor Element Material :
- SILICON
- Ambient Temperature Range High :
- 150°C
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Collector Current :
- 200mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin (Sn)
- Frequency - Transition :
- 300MHz
- Power Dissipation :
- 250mW
- Transistor Application :
- SWITCHING
- hFE Min :
- 100
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 40V
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Series :
- Automotive, AEC-Q101
- Max Junction Temperature (Tj) :
- 150°C
- Datasheets
- MMBT3904,215
MMBT3904,215 Documents

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3904,215 Overview
This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 300MHz.A maximum collector current of 200mA volts is possible.
MMBT3904,215 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904,215 Applications
There are a lot of Nexperia USA Inc.
MMBT3904,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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