MJD253T4

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Width :

6.22mm

Time@Peak Reflow Temperature-Max (s) :

40

Contact Plating :

Tin

hFE Min :

40

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

100V

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

1.4W

Operating Temperature :

-65°C~150°C TJ

Factory Lead Time :

8 Weeks

Collector Emitter Breakdown Voltage :

100V

Current - Collector Cutoff (Max) :

100nA ICBO

Power Dissipation :

1.4W

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA 1V

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

40MHz

Collector Emitter Saturation Voltage :

600mV

Radiation Hardening :

No

Case Connection :

COLLECTOR

Published :

2005

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

40MHz

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

JESD-609 Code :

e3

Polarity/Channel Type :

PNP

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

AMPLIFIER

Number of Terminations :

2

Number of Pins :

3

Transistor Type :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Frequency :

40MHz

Voltage - Rated DC :

-100V

Max Breakdown Voltage :

100V

Height :

2.38mm

Surface Mount :

yes

Number of Elements :

1

Length :

6.73mm

Collector Emitter Voltage (VCEO) :

100V

Max Collector Current :

4A

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Transistor Element Material :

SILICON

Pin Count :

3

Base Part Number :

MJD253

Current Rating :

-4A

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

7V