IXFL34N100
- Mfr.Part #
- IXFL34N100
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 30A ISOPLUS264
- Stock
- 17,855
- In Stock :
- 17,855
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max :
- 0.28 Ω
- Package :
- Tube
- Power Dissipation (Max) :
- 550W (Tc)
- Rds On Max :
- 280 mΩ
- Tradename :
- HyperFET
- Drain to Source Resistance :
- 300 mΩ
- Package / Case :
- ISOPLUS264™
- Additional Feature :
- AVALANCHE RATED
- Continuous Drain Current (ID) :
- 30A
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Product Status :
- Not For New Designs
- Width :
- 5.21 mm
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Series :
- HiPerFET™
- Channel Mode :
- Enhancement
- Transistor Type :
- 1 N-Channel
- Polarity/Channel Type :
- N-Channel
- Brand :
- IXYS
- Min Operating Temperature :
- -55 °C
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 550 W
- RoHS :
- Details
- Power Dissipation :
- 550W
- Packaging :
- Tube
- Configuration :
- Single
- Mount :
- Through Hole
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 30A, 10V
- Published :
- 2002
- JESD-609 Code :
- e1
- Product Type :
- MOSFET
- Length :
- 20.29 mm
- DS Breakdown Voltage-Min :
- 1000 V
- Number of Elements :
- 1
- Supplier Device Package :
- ISOPLUS264™
- Resistance :
- 280mOhm
- Rise Time :
- 65ns
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Vgs (Max) :
- ±20V
- Surface Mount :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- Power Dissipation-Max (Abs) :
- 550 W
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Reach Compliance Code :
- Compliant
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 1000V
- Drain to Source Breakdown Voltage :
- 1kV
- Turn-Off Delay Time :
- 110 ns
- Base Product Number :
- IXFL34
- Transistor Polarity :
- N-Channel
- Number of Pins :
- 3
- Max Operating Temperature :
- 150 °C
- Input Capacitance (Ciss) (Max) @ Vds :
- 9200pF @ 25V
- Mounting Style :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- --
- FET Type :
- N-Channel
- Product Category :
- MOSFET
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Input Capacitance :
- 9.2 nF
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- Isolated
- Fall Time (Typ) :
- 30 ns
- Power Dissipation-Max :
- 550W Tc
- JESD-30 Code :
- R-PSIP-T3
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Height :
- 26.42 mm
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 136 A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Element Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- RoHS Status :
- RoHS Compliant
- Number of Terminals :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain Current-Max (Abs) (ID) :
- 30 A
- Datasheets
- IXFL34N100
N-Channel Tube 280m Ω @ 30A, 10V ±20V 9200pF @ 25V 380nC @ 10V 1000V ISOPLUS264™
IXFL34N100 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 4000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.There is no drain current on this device since the maximum continuous current it can conduct is 30 A.As a result of its turn-off delay time, which is 110 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 136 A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 300 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFL34N100 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 136 A.
single MOSFETs transistor is 300 mΩ
a 1000V drain to source voltage (Vdss)
IXFL34N100 Applications
There are a lot of IXYS
IXFL34N100 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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