IXFL34N100

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Mfr.Part #
IXFL34N100
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 1000V 30A ISOPLUS264
Stock
17,855
In Stock :
17,855

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain-source On Resistance-Max :
0.28 Ω
Package :
Tube
Power Dissipation (Max) :
550W (Tc)
Rds On Max :
280 mΩ
Tradename :
HyperFET
Drain to Source Resistance :
300 mΩ
Package / Case :
ISOPLUS264™
Additional Feature :
AVALANCHE RATED
Continuous Drain Current (ID) :
30A
Mounting Type :
Through Hole
Qualification Status :
Not Qualified
Product Status :
Not For New Designs
Width :
5.21 mm
Pbfree Code :
yes
Transistor Element Material :
SILICON
Series :
HiPerFET™
Channel Mode :
Enhancement
Transistor Type :
1 N-Channel
Polarity/Channel Type :
N-Channel
Brand :
IXYS
Min Operating Temperature :
-55 °C
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Single
Transistor Application :
SWITCHING
Max Power Dissipation :
550 W
RoHS :
Details
Power Dissipation :
550W
Packaging :
Tube
Configuration :
Single
Mount :
Through Hole
Number of Channels :
1 Channel
Rds On (Max) @ Id, Vgs :
280m Ω @ 30A, 10V
Published :
2002
JESD-609 Code :
e1
Product Type :
MOSFET
Length :
20.29 mm
DS Breakdown Voltage-Min :
1000 V
Number of Elements :
1
Supplier Device Package :
ISOPLUS264™
Resistance :
280mOhm
Rise Time :
65ns
Vgs(th) (Max) @ Id :
5V @ 8mA
Vgs (Max) :
±20V
Surface Mount :
No
Gate Charge (Qg) (Max) @ Vgs :
380nC @ 10V
Power Dissipation-Max (Abs) :
550 W
Avalanche Energy Rating (Eas) :
4000 mJ
Reach Compliance Code :
Compliant
Package Shape :
RECTANGULAR
Drain to Source Voltage (Vdss) :
1000V
Drain to Source Breakdown Voltage :
1kV
Turn-Off Delay Time :
110 ns
Base Product Number :
IXFL34
Transistor Polarity :
N-Channel
Number of Pins :
3
Max Operating Temperature :
150 °C
Input Capacitance (Ciss) (Max) @ Vds :
9200pF @ 25V
Mounting Style :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
--
FET Type :
N-Channel
Product Category :
MOSFET
Lead Free :
Lead Free
Pin Count :
3
Input Capacitance :
9.2 nF
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
Isolated
Fall Time (Typ) :
30 ns
Power Dissipation-Max :
550W Tc
JESD-30 Code :
R-PSIP-T3
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
20V
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Height :
26.42 mm
Number of Terminations :
3
Pulsed Drain Current-Max (IDM) :
136 A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Manufacturer :
IXYS
Element Configuration :
Single
Terminal Form :
THROUGH-HOLE
RoHS Status :
RoHS Compliant
Number of Terminals :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain Current-Max (Abs) (ID) :
30 A
Datasheets
IXFL34N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL34N100 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUS264™, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:3, IXFL34N100 pinout, IXFL34N100 datasheet PDF, IXFL34N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL34N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 280m Ω @ 30A, 10V ±20V 9200pF @ 25V 380nC @ 10V 1000V ISOPLUS264™

IXFL34N100 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 4000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.There is no drain current on this device since the maximum continuous current it can conduct is 30 A.As a result of its turn-off delay time, which is 110 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 136 A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 300 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFL34N100 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 136 A.
single MOSFETs transistor is 300 mΩ
a 1000V drain to source voltage (Vdss)


IXFL34N100 Applications


There are a lot of IXYS
IXFL34N100 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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