IXFL32N120P
- Mfr.Part #
- IXFL32N120P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUSi5-Pak™
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 24A I5PAK
- Stock
- 19,469
- In Stock :
- 19,469
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 340m Ω @ 16A, 10V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Maximum Operating Temperature :
- + 150 C
- Vgs (Max) :
- ±30V
- Input Capacitance :
- 21 nF
- Case Connection :
- Isolated
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- ISOPLUSi5-Pak™
- Gate to Source Voltage (Vgs) :
- 30V
- Reach Compliance Code :
- Compliant
- Pulsed Drain Current-Max (IDM) :
- 100A
- Transistor Application :
- SWITCHING
- Rds On Max :
- 340 mΩ
- Number of Pins :
- 3
- FET Feature :
- --
- Tradename :
- HiPerFET
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Length :
- 20.29mm
- Fall Time (Typ) :
- 51 ns
- Number of Terminals :
- 3
- Channel Mode :
- Enhancement
- Height :
- 26.42mm
- Turn On Delay Time :
- 70 ns
- Base Product Number :
- IXFL32
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 520W (Tc)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 520 W
- Continuous Drain Current (ID) :
- 24A
- Surface Mount :
- No
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- Brand :
- IXYS
- Factory Lead Time :
- 26 Weeks
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 520 W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS :
- Compliant
- Qualification Status :
- Not Qualified
- Product Category :
- MOSFET
- Number of Elements :
- 1
- Turn-On Delay Time :
- 70 ns
- Transistor Polarity :
- N-Channel
- Mounting Style :
- Through Hole
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Package :
- Tube
- Number of Channels :
- 1 Channel
- Published :
- 2010
- Product Status :
- Active
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Minimum Operating Temperature :
- - 55 C
- Max Operating Temperature :
- 150 °C
- Turn-Off Delay Time :
- 88 ns
- Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- Manufacturer :
- IXYS
- Transistor Type :
- 1 N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 21000pF @ 25V
- JESD-30 Code :
- R-PSIP-T3
- DS Breakdown Voltage-Min :
- 1200 V
- Min Operating Temperature :
- -55 °C
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- THROUGH-HOLE
- Drain-source On Resistance-Max :
- 0.34 Ω
- Rise Time :
- 62ns
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Power Dissipation :
- 520W
- Drain Current-Max (Abs) (ID) :
- 24 A
- Drain to Source Voltage (Vdss) :
- 1200V
- Pin Count :
- 3
- Series :
- HiPerFET™, PolarP2™
- Drain to Source Breakdown Voltage :
- 1.2kV
- Drain to Source Resistance :
- 340 mΩ
- Power Dissipation-Max :
- 520W Tc
- Width :
- 5.21mm
- Package / Case :
- ISOPLUSi5-Pak™
- Product Type :
- MOSFET
- Datasheets
- IXFL32N120P

N-Channel Tube 340m Ω @ 16A, 10V ±30V 21000pF @ 25V 360nC @ 10V 1200V ISOPLUSi5-Pak™
IXFL32N120P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 21000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1.2kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1.2kV.There is no drain current on this device since the maximum continuous current it can conduct is 24 A.As a result of its turn-off delay time, which is 88 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 100A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 340 mΩ.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 70 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 1200 V, it should remain above the 1200 V level.The transistor must receive a 1200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFL32N120P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 88 ns
based on its rated peak drain current 100A.
single MOSFETs transistor is 340 mΩ
a 1200V drain to source voltage (Vdss)
IXFL32N120P Applications
There are a lot of IXYS
IXFL32N120P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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