IXFL32N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

340m Ω @ 16A, 10V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±30V

Input Capacitance :

21 nF

Case Connection :

Isolated

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

ISOPLUSi5-Pak™

Gate to Source Voltage (Vgs) :

30V

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

100A

Transistor Application :

SWITCHING

Rds On Max :

340 mΩ

Number of Pins :

3

FET Feature :

--

Tradename :

HiPerFET

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

20.29mm

Fall Time (Typ) :

51 ns

Number of Terminals :

3

Channel Mode :

Enhancement

Height :

26.42mm

Turn On Delay Time :

70 ns

Base Product Number :

IXFL32

FET Type :

N-Channel

Power Dissipation (Max) :

520W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

520 W

Continuous Drain Current (ID) :

24A

Surface Mount :

No

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Package Shape :

RECTANGULAR

Brand :

IXYS

Factory Lead Time :

26 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Power Dissipation-Max (Abs) :

520 W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS :

Compliant

Qualification Status :

Not Qualified

Product Category :

MOSFET

Number of Elements :

1

Turn-On Delay Time :

70 ns

Transistor Polarity :

N-Channel

Mounting Style :

Through Hole

Number of Terminations :

3

Terminal Position :

Single

Package :

Tube

Number of Channels :

1 Channel

Published :

2010

Product Status :

Active

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Minimum Operating Temperature :

- 55 C

Max Operating Temperature :

150 °C

Turn-Off Delay Time :

88 ns

Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Manufacturer :

IXYS

Transistor Type :

1 N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

21000pF @ 25V

JESD-30 Code :

R-PSIP-T3

DS Breakdown Voltage-Min :

1200 V

Min Operating Temperature :

-55 °C

Packaging :

Tube

Avalanche Energy Rating (Eas) :

2000 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

THROUGH-HOLE

Drain-source On Resistance-Max :

0.34 Ω

Rise Time :

62ns

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Power Dissipation :

520W

Drain Current-Max (Abs) (ID) :

24 A

Drain to Source Voltage (Vdss) :

1200V

Pin Count :

3

Series :

HiPerFET™, PolarP2™

Drain to Source Breakdown Voltage :

1.2kV

Drain to Source Resistance :

340 mΩ

Power Dissipation-Max :

520W Tc

Width :

5.21mm

Package / Case :

ISOPLUSi5-Pak™

Product Type :

MOSFET