IXFL32N120P

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Mfr.Part #
IXFL32N120P
Manufacturer
Littelfuse
Package / Case
ISOPLUSi5-Pak™
Datasheet
Download
Description
MOSFET N-CH 1200V 24A I5PAK
Stock
19,469
In Stock :
19,469

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
N-Channel
Width :
5.21mm
Product Category :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
Isolated
Number of Terminations :
3
Power Dissipation-Max :
520W Tc
Factory Lead Time :
26 Weeks
Transistor Element Material :
SILICON
Max Operating Temperature :
150 °C
Drain to Source Breakdown Voltage :
1.2kV
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) :
520 W
Drain to Source Voltage (Vdss) :
1200V
Reach Compliance Code :
Compliant
Continuous Drain Current (ID) :
24A
Power Dissipation :
520W
Base Product Number :
IXFL32
Published :
2010
Number of Pins :
3
Package / Case :
ISOPLUSi5-Pak™
Terminal Position :
Single
Element Configuration :
Single
Brand :
IXYS
Package :
Tube
Surface Mount :
No
Pulsed Drain Current-Max (IDM) :
100A
Minimum Operating Temperature :
- 55 C
Terminal Form :
THROUGH-HOLE
FET Feature :
--
Height :
26.42mm
Number of Terminals :
3
Rds On Max :
340 mΩ
Maximum Operating Temperature :
+ 150 C
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
51 ns
Gate to Source Voltage (Vgs) :
30V
Min Operating Temperature :
-55 °C
Drain-source On Resistance-Max :
0.34 Ω
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±30V
Channel Mode :
Enhancement
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
N-Channel
Input Capacitance :
21 nF
Transistor Type :
1 N-Channel
Drain Current-Max (Abs) (ID) :
24 A
Tradename :
HiPerFET
Turn On Delay Time :
70 ns
Max Power Dissipation :
520 W
JESD-30 Code :
R-PSIP-T3
RoHS :
Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
21000pF @ 25V
Series :
HiPerFET™, PolarP2™
Supplier Device Package :
ISOPLUSi5-Pak™
Product Type :
MOSFET
Power Dissipation (Max) :
520W (Tc)
Avalanche Energy Rating (Eas) :
2000 mJ
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Turn-On Delay Time :
70 ns
Turn-Off Delay Time :
88 ns
Current - Continuous Drain (Id) @ 25°C :
24A Tc
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
340m Ω @ 16A, 10V
Drain to Source Resistance :
340 mΩ
Packaging :
Tube
Rise Time :
62ns
DS Breakdown Voltage-Min :
1200 V
Mounting Style :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
3
Length :
20.29mm
Number of Elements :
1
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Through Hole
Configuration :
Single
Manufacturer :
IXYS
Product Status :
Active
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Pbfree Code :
yes
Mount :
Through Hole
Number of Channels :
1 Channel
Qualification Status :
Not Qualified
Datasheets
IXFL32N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL32N120P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Package / Case:ISOPLUSi5-Pak™, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, IXFL32N120P pinout, IXFL32N120P datasheet PDF, IXFL32N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL32N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFL32N120P


N-Channel Tube 340m Ω @ 16A, 10V ±30V 21000pF @ 25V 360nC @ 10V 1200V ISOPLUSi5-Pak™

IXFL32N120P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 21000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1.2kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1.2kV.There is no drain current on this device since the maximum continuous current it can conduct is 24 A.As a result of its turn-off delay time, which is 88 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 100A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 340 mΩ.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 70 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 1200 V, it should remain above the 1200 V level.The transistor must receive a 1200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFL32N120P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 88 ns
based on its rated peak drain current 100A.
single MOSFETs transistor is 340 mΩ
a 1200V drain to source voltage (Vdss)


IXFL32N120P Applications


There are a lot of IXYS
IXFL32N120P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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