IXFL32N120P

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Mfr.Part #
IXFL32N120P
Manufacturer
Littelfuse
Package / Case
ISOPLUSi5-Pak™
Datasheet
Download
Description
MOSFET N-CH 1200V 24A I5PAK
Stock
19,469
In Stock :
19,469

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Number of Terminals :
3
Continuous Drain Current (ID) :
24A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-On Delay Time :
70 ns
FET Type :
N-Channel
Min Operating Temperature :
-55 °C
Manufacturer :
IXYS
Length :
20.29mm
Pin Count :
3
Avalanche Energy Rating (Eas) :
2000 mJ
Package / Case :
ISOPLUSi5-Pak™
Power Dissipation (Max) :
520W (Tc)
Height :
26.42mm
Power Dissipation-Max :
520W Tc
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
HiPerFET™, PolarP2™
Mount :
Through Hole
Terminal Form :
THROUGH-HOLE
JESD-30 Code :
R-PSIP-T3
DS Breakdown Voltage-Min :
1200 V
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Package Shape :
RECTANGULAR
Qualification Status :
Not Qualified
Number of Terminations :
3
Number of Pins :
3
Turn On Delay Time :
70 ns
Drain Current-Max (Abs) (ID) :
24 A
Transistor Element Material :
SILICON
Rise Time :
62ns
Base Product Number :
IXFL32
Power Dissipation :
520W
Pbfree Code :
yes
Drain to Source Resistance :
340 mΩ
Package :
Tube
Reach Compliance Code :
Compliant
Maximum Operating Temperature :
+ 150 C
Vgs (Max) :
±30V
Power Dissipation-Max (Abs) :
520 W
FET Feature :
--
Brand :
IXYS
Product Status :
Active
Surface Mount :
No
Rds On Max :
340 mΩ
Pulsed Drain Current-Max (IDM) :
100A
Case Connection :
Isolated
Fall Time (Typ) :
51 ns
Drain to Source Voltage (Vdss) :
1200V
Published :
2010
RoHS :
Compliant
Configuration :
Single
Tradename :
HiPerFET
Turn-Off Delay Time :
88 ns
Gate to Source Voltage (Vgs) :
30V
Width :
5.21mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Max Power Dissipation :
520 W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Style :
Through Hole
Factory Lead Time :
26 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
21000pF @ 25V
RoHS Status :
ROHS3 Compliant
Minimum Operating Temperature :
- 55 C
Transistor Type :
1 N-Channel
Input Capacitance :
21 nF
Rds On (Max) @ Id, Vgs :
340m Ω @ 16A, 10V
Terminal Position :
Single
Transistor Polarity :
N-Channel
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Drain-source On Resistance-Max :
0.34 Ω
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
Supplier Device Package :
ISOPLUSi5-Pak™
Channel Mode :
Enhancement
Mounting Type :
Through Hole
Product Category :
MOSFET
Drain to Source Breakdown Voltage :
1.2kV
Max Operating Temperature :
150 °C
Number of Channels :
1 Channel
Product Type :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Datasheets
IXFL32N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL32N120P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUSi5-Pak™, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Number of Channels:1 Channel, IXFL32N120P pinout, IXFL32N120P datasheet PDF, IXFL32N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL32N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFL32N120P


N-Channel Tube 340m Ω @ 16A, 10V ±30V 21000pF @ 25V 360nC @ 10V 1200V ISOPLUSi5-Pak™

IXFL32N120P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 21000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1.2kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1.2kV.There is no drain current on this device since the maximum continuous current it can conduct is 24 A.As a result of its turn-off delay time, which is 88 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 100A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 340 mΩ.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 70 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 1200 V, it should remain above the 1200 V level.The transistor must receive a 1200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFL32N120P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 88 ns
based on its rated peak drain current 100A.
single MOSFETs transistor is 340 mΩ
a 1200V drain to source voltage (Vdss)


IXFL32N120P Applications


There are a lot of IXYS
IXFL32N120P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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