IXFL32N120P

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Mfr.Part #
IXFL32N120P
Manufacturer
Littelfuse
Package / Case
ISOPLUSi5-Pak™
Datasheet
Download
Description
MOSFET N-CH 1200V 24A I5PAK
Stock
19,469
In Stock :
19,469

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
100A
Width :
5.21mm
Drain to Source Voltage (Vdss) :
1200V
Continuous Drain Current (ID) :
24A
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Maximum Operating Temperature :
+ 150 C
Max Operating Temperature :
150 °C
RoHS :
Compliant
Packaging :
Tube
Number of Channels :
1 Channel
Base Product Number :
IXFL32
Number of Pins :
3
Number of Terminations :
3
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
2000 mJ
Drain-source On Resistance-Max :
0.34 Ω
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
30V
Vgs (Max) :
±30V
Mount :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
Input Capacitance :
21 nF
Rds On (Max) @ Id, Vgs :
340m Ω @ 16A, 10V
Tradename :
HiPerFET
Max Power Dissipation :
520 W
Minimum Operating Temperature :
- 55 C
RoHS Status :
ROHS3 Compliant
Package :
Tube
Drain to Source Resistance :
340 mΩ
Drain Current-Max (Abs) (ID) :
24 A
Manufacturer :
IXYS
Power Dissipation :
520W
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
1 N-Channel
Package / Case :
ISOPLUSi5-Pak™
Supplier Device Package :
ISOPLUSi5-Pak™
Published :
2010
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Turn On Delay Time :
70 ns
Mounting Style :
Through Hole
Rise Time :
62ns
Power Dissipation-Max :
520W Tc
Element Configuration :
Single
Power Dissipation (Max) :
520W (Tc)
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Length :
20.29mm
Power Dissipation-Max (Abs) :
520 W
Transistor Polarity :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
21000pF @ 25V
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Min Operating Temperature :
-55 °C
Reach Compliance Code :
Compliant
DS Breakdown Voltage-Min :
1200 V
Terminal Form :
THROUGH-HOLE
JESD-30 Code :
R-PSIP-T3
Drain to Source Breakdown Voltage :
1.2kV
Rds On Max :
340 mΩ
Terminal Position :
Single
Factory Lead Time :
26 Weeks
Polarity/Channel Type :
N-Channel
Height :
26.42mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Fall Time (Typ) :
51 ns
Brand :
IXYS
Pin Count :
3
Package Shape :
RECTANGULAR
Surface Mount :
No
Transistor Element Material :
SILICON
Configuration :
Single
Mounting Type :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Product Type :
MOSFET
Turn-Off Delay Time :
88 ns
Turn-On Delay Time :
70 ns
Channel Mode :
Enhancement
Case Connection :
Isolated
Qualification Status :
Not Qualified
Number of Terminals :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Active
Product Category :
MOSFET
Series :
HiPerFET™, PolarP2™
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Datasheets
IXFL32N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL32N120P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:ISOPLUSi5-Pak™, Mounting Type:Through Hole, IXFL32N120P pinout, IXFL32N120P datasheet PDF, IXFL32N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL32N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFL32N120P


N-Channel Tube 340m Ω @ 16A, 10V ±30V 21000pF @ 25V 360nC @ 10V 1200V ISOPLUSi5-Pak™

IXFL32N120P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 21000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1.2kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1.2kV.There is no drain current on this device since the maximum continuous current it can conduct is 24 A.As a result of its turn-off delay time, which is 88 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 100A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 340 mΩ.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 70 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 1200 V, it should remain above the 1200 V level.The transistor must receive a 1200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFL32N120P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 88 ns
based on its rated peak drain current 100A.
single MOSFETs transistor is 340 mΩ
a 1200V drain to source voltage (Vdss)


IXFL32N120P Applications


There are a lot of IXYS
IXFL32N120P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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