IXFL32N120P

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Mfr.Part #
IXFL32N120P
Manufacturer
Littelfuse
Package / Case
ISOPLUSi5-Pak™
Datasheet
Download
Description
MOSFET N-CH 1200V 24A I5PAK
Stock
19,469
In Stock :
19,469

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
--
Drain to Source Breakdown Voltage :
1.2kV
Turn-On Delay Time :
70 ns
Vgs (Max) :
±30V
RoHS :
Compliant
Rds On (Max) @ Id, Vgs :
340m Ω @ 16A, 10V
FET Type :
N-Channel
Number of Elements :
1
Terminal Position :
Single
Rise Time :
62ns
Reach Compliance Code :
Compliant
Gate to Source Voltage (Vgs) :
30V
Package / Case :
ISOPLUSi5-Pak™
Manufacturer :
IXYS
Maximum Operating Temperature :
+ 150 C
Brand :
IXYS
Input Capacitance :
21 nF
Case Connection :
Isolated
Length :
20.29mm
Polarity/Channel Type :
N-Channel
Number of Terminations :
3
Product Status :
Active
Series :
HiPerFET™, PolarP2™
Packaging :
Tube
Power Dissipation-Max :
520W Tc
Transistor Polarity :
N-Channel
Power Dissipation :
520W
Max Operating Temperature :
150 °C
Input Capacitance (Ciss) (Max) @ Vds :
21000pF @ 25V
Avalanche Energy Rating (Eas) :
2000 mJ
Drain to Source Resistance :
340 mΩ
RoHS Status :
ROHS3 Compliant
Configuration :
Single
Supplier Device Package :
ISOPLUSi5-Pak™
Package :
Tube
Rds On Max :
340 mΩ
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Drain Current-Max (Abs) (ID) :
24 A
Power Dissipation-Max (Abs) :
520 W
Turn-Off Delay Time :
88 ns
Product Category :
MOSFET
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
THROUGH-HOLE
Package Shape :
RECTANGULAR
Mount :
Through Hole
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Number of Channels :
1 Channel
Min Operating Temperature :
-55 °C
Width :
5.21mm
Pbfree Code :
yes
Mounting Style :
Through Hole
Height :
26.42mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Through Hole
Transistor Type :
1 N-Channel
Qualification Status :
Not Qualified
Element Configuration :
Single
Tradename :
HiPerFET
Turn On Delay Time :
70 ns
Power Dissipation (Max) :
520W (Tc)
Pin Count :
3
Continuous Drain Current (ID) :
24A
Drain to Source Voltage (Vdss) :
1200V
Drive Voltage (Max Rds On,Min Rds On) :
10V
DS Breakdown Voltage-Min :
1200 V
Minimum Operating Temperature :
- 55 C
Number of Pins :
3
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
Drain-source On Resistance-Max :
0.34 Ω
Max Power Dissipation :
520 W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~150°C TJ
Channel Mode :
Enhancement
Factory Lead Time :
26 Weeks
Number of Terminals :
3
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
100A
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Surface Mount :
No
Published :
2010
Base Product Number :
IXFL32
JESD-30 Code :
R-PSIP-T3
Product Type :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Fall Time (Typ) :
51 ns
Datasheets
IXFL32N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL32N120P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUSi5-Pak™, Number of Terminations:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IXFL32N120P pinout, IXFL32N120P datasheet PDF, IXFL32N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL32N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFL32N120P


N-Channel Tube 340m Ω @ 16A, 10V ±30V 21000pF @ 25V 360nC @ 10V 1200V ISOPLUSi5-Pak™

IXFL32N120P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 21000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1.2kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1.2kV.There is no drain current on this device since the maximum continuous current it can conduct is 24 A.As a result of its turn-off delay time, which is 88 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 100A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 340 mΩ.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 70 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 1200 V, it should remain above the 1200 V level.The transistor must receive a 1200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFL32N120P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 88 ns
based on its rated peak drain current 100A.
single MOSFETs transistor is 340 mΩ
a 1200V drain to source voltage (Vdss)


IXFL32N120P Applications


There are a lot of IXYS
IXFL32N120P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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