IXFL38N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

1000V

Package :

Tube

Channel Mode :

Enhancement

Transistor Element Material :

SILICON

Base Product Number :

IXFL38

Lead Free :

Lead Free

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS :

Details

Drain-source On Resistance-Max :

0.23 Ω

Published :

2009

Case Connection :

Isolated

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Pin Count :

3

Number of Terminations :

3

Maximum Operating Temperature :

+ 150 C

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

1kV

JESD-30 Code :

R-PSIP-T3

Height :

26.42 mm

Width :

5.21 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Active

Supplier Device Package :

ISOPLUSi5-Pak™

Length :

20.29 mm

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Power Dissipation-Max :

520W Tc

Mounting Type :

Through Hole

Rise Time :

55ns

Input Capacitance (Ciss) (Max) @ Vds :

24000pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Series :

HiPerFET™, PolarP2™

DS Breakdown Voltage-Min :

1000 V

Avalanche Energy Rating (Eas) :

2000 mJ

Tradename :

HiPerFET

Configuration :

Single

Product Category :

MOSFET

Fall Time (Typ) :

40 ns

Terminal Form :

THROUGH-HOLE

Reach Compliance Code :

Compliant

Turn-Off Delay Time :

71 ns

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max (Abs) :

520 W

Terminal Position :

Single

Power Dissipation (Max) :

520W (Tc)

FET Feature :

--

FET Type :

N-Channel

Element Configuration :

Single

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

230m Ω @ 19A, 10V

Mounting Style :

Through Hole

Additional Feature :

AVALANCHE RATED

Package / Case :

ISOPLUSi5-Pak™

Number of Terminals :

3

Package Shape :

RECTANGULAR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

120A

Vgs (Max) :

±30V

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

350nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

520W

Factory Lead Time :

26 Weeks

Drain Current-Max (Abs) (ID) :

29 A

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

Manufacturer :

IXYS

Pbfree Code :

yes

Product Type :

MOSFET

Brand :

IXYS

Number of Channels :

1 Channel

Mount :

Through Hole

Continuous Drain Current (ID) :

29A

Transistor Type :

1 N-Channel