IXFL38N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

230m Ω @ 19A, 10V

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

29 A

Drain-source On Resistance-Max :

0.23 Ω

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Continuous Drain Current (ID) :

29A

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

Published :

2009

Number of Terminals :

3

Height :

26.42 mm

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

24000pF @ 25V

Factory Lead Time :

26 Weeks

Gate to Source Voltage (Vgs) :

30V

Rise Time :

55ns

Package :

Tube

Polarity/Channel Type :

N-Channel

Mounting Type :

Through Hole

Number of Elements :

1

Width :

5.21 mm

DS Breakdown Voltage-Min :

1000 V

Mount :

Through Hole

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Manufacturer :

IXYS

Product Type :

MOSFET

RoHS :

Details

FET Type :

N-Channel

Product Status :

Active

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

No

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Lead Free :

Lead Free

Fall Time (Typ) :

40 ns

Package / Case :

ISOPLUSi5-Pak™

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Product Category :

MOSFET

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSIP-T3

Pin Count :

3

Avalanche Energy Rating (Eas) :

2000 mJ

Supplier Device Package :

ISOPLUSi5-Pak™

Channel Mode :

Enhancement

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max (Abs) :

520 W

Pulsed Drain Current-Max (IDM) :

120A

Drain to Source Breakdown Voltage :

1kV

Element Configuration :

Single

Mounting Style :

Through Hole

Power Dissipation-Max :

520W Tc

Number of Terminations :

3

Turn-Off Delay Time :

71 ns

Case Connection :

Isolated

Number of Pins :

3

Series :

HiPerFET™, PolarP2™

Power Dissipation :

520W

Qualification Status :

Not Qualified

Packaging :

Tube

Configuration :

Single

Brand :

IXYS

Additional Feature :

AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Tradename :

HiPerFET

Transistor Type :

1 N-Channel

Drain to Source Voltage (Vdss) :

1000V

Power Dissipation (Max) :

520W (Tc)

Maximum Operating Temperature :

+ 150 C

Length :

20.29 mm

Gate Charge (Qg) (Max) @ Vgs :

350nC @ 10V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Base Product Number :

IXFL38

Moisture Sensitivity Level (MSL) :

1 (Unlimited)