IXFL38N100Q2

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Mfr.Part #
IXFL38N100Q2
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 1000V 29A ISOPLUS264
Stock
4,326
In Stock :
4,326

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
28ns
Number of Terminations :
3
Mount :
Through Hole
Channel Mode :
Enhancement
Drain to Source Resistance :
280 mΩ
Radiation Hardening :
No
Element Configuration :
Single
Product Category :
MOSFET
Series :
HiPerFET™
Qualification Status :
Not Qualified
Brand :
IXYS
RoHS :
Compliant
Power Dissipation-Max :
380W Tc
Packaging :
Tube
Published :
2008
Current - Continuous Drain (Id) @ 25°C :
29A Tc
DS Breakdown Voltage-Min :
1000 V
Transistor Type :
1 N-Channel
Drain to Source Voltage (Vdss) :
1000V
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Rds On Max :
280 mΩ
Surface Mount :
No
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Number of Channels :
1 Channel
Max Power Dissipation :
380 W
Vgs (Max) :
±30V
Additional Feature :
AVALANCHE RATED
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
N-Channel
Tradename :
HiPerFET
Product Status :
Not For New Designs
Package Shape :
RECTANGULAR
Continuous Drain Current (ID) :
29A
Width :
5.21mm
FET Type :
N-Channel
Min Operating Temperature :
-55 °C
Gate to Source Voltage (Vgs) :
30V
Operating Temperature :
-55°C~150°C TJ
Drain Current-Max (Abs) (ID) :
29 A
Turn On Delay Time :
25 ns
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSIP-T3
Number of Terminals :
3
Avalanche Energy Rating (Eas) :
5000 mJ
Pbfree Code :
yes
JESD-609 Code :
e1
Maximum Operating Temperature :
+ 150 C
Fall Time (Typ) :
15 ns
Base Product Number :
IXFL38
Power Dissipation (Max) :
380W (Tc)
Mounting Type :
Through Hole
Terminal Form :
THROUGH-HOLE
Product Type :
MOSFET
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
5.5V @ 8mA
Drain-source On Resistance-Max :
0.28Ohm
Input Capacitance (Ciss) (Max) @ Vds :
13500pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
IXYS
Drain to Source Breakdown Voltage :
1kV
Lead Free :
Lead Free
Number of Elements :
1
Max Operating Temperature :
150 °C
Reach Compliance Code :
Compliant
Case Connection :
Isolated
Transistor Polarity :
N-Channel
Package / Case :
ISOPLUS264™
Factory Lead Time :
8 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Rds On (Max) @ Id, Vgs :
280m Ω @ 19A, 10V
Power Dissipation :
380W
Length :
20.29mm
Transistor Element Material :
SILICON
Mounting Style :
Through Hole
Number of Pins :
264
Turn-On Delay Time :
25 ns
Package :
Tube
Turn-Off Delay Time :
57 ns
Power Dissipation-Max (Abs) :
380 W
Supplier Device Package :
ISOPLUS264™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance :
13.5 nF
Minimum Operating Temperature :
- 55 C
FET Feature :
--
Pulsed Drain Current-Max (IDM) :
152 A
Height :
26.42mm
Datasheets
IXFL38N100Q2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL38N100Q2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:ISOPLUS264™, Number of Pins:264, IXFL38N100Q2 pinout, IXFL38N100Q2 datasheet PDF, IXFL38N100Q2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL38N100Q2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFL38N100Q2


N-Channel Tube 280m Ω @ 19A, 10V ±30V 13500pF @ 25V 250nC @ 10V 1000V ISOPLUS264™

IXFL38N100Q2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 13500pF @ 25V.This device has a continuous drain current (ID) of [29A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1kV, the drain-source breakdown voltage is 1kV.A device's drain current is its maximum continuous current, and this device's drain current is 29 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 57 ns.A maximum pulsed drain current of 152 A is the maximum peak drain current rated for this device.MOSFETs have 280 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 25 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000 V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFL38N100Q2 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 57 ns
based on its rated peak drain current 152 A.
single MOSFETs transistor is 280 mΩ
a 1000V drain to source voltage (Vdss)


IXFL38N100Q2 Applications


There are a lot of IXYS
IXFL38N100Q2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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