IXFL38N100Q2
- Mfr.Part #
- IXFL38N100Q2
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 29A ISOPLUS264
- Stock
- 4,326
- In Stock :
- 4,326
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 28ns
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Channel Mode :
- Enhancement
- Drain to Source Resistance :
- 280 mΩ
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Product Category :
- MOSFET
- Series :
- HiPerFET™
- Qualification Status :
- Not Qualified
- Brand :
- IXYS
- RoHS :
- Compliant
- Power Dissipation-Max :
- 380W Tc
- Packaging :
- Tube
- Published :
- 2008
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- DS Breakdown Voltage-Min :
- 1000 V
- Transistor Type :
- 1 N-Channel
- Drain to Source Voltage (Vdss) :
- 1000V
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- Rds On Max :
- 280 mΩ
- Surface Mount :
- No
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Number of Channels :
- 1 Channel
- Max Power Dissipation :
- 380 W
- Vgs (Max) :
- ±30V
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- N-Channel
- Tradename :
- HiPerFET
- Product Status :
- Not For New Designs
- Package Shape :
- RECTANGULAR
- Continuous Drain Current (ID) :
- 29A
- Width :
- 5.21mm
- FET Type :
- N-Channel
- Min Operating Temperature :
- -55 °C
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 29 A
- Turn On Delay Time :
- 25 ns
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSIP-T3
- Number of Terminals :
- 3
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Maximum Operating Temperature :
- + 150 C
- Fall Time (Typ) :
- 15 ns
- Base Product Number :
- IXFL38
- Power Dissipation (Max) :
- 380W (Tc)
- Mounting Type :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Product Type :
- MOSFET
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 5.5V @ 8mA
- Drain-source On Resistance-Max :
- 0.28Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 13500pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- IXYS
- Drain to Source Breakdown Voltage :
- 1kV
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Max Operating Temperature :
- 150 °C
- Reach Compliance Code :
- Compliant
- Case Connection :
- Isolated
- Transistor Polarity :
- N-Channel
- Package / Case :
- ISOPLUS264™
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 19A, 10V
- Power Dissipation :
- 380W
- Length :
- 20.29mm
- Transistor Element Material :
- SILICON
- Mounting Style :
- Through Hole
- Number of Pins :
- 264
- Turn-On Delay Time :
- 25 ns
- Package :
- Tube
- Turn-Off Delay Time :
- 57 ns
- Power Dissipation-Max (Abs) :
- 380 W
- Supplier Device Package :
- ISOPLUS264™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance :
- 13.5 nF
- Minimum Operating Temperature :
- - 55 C
- FET Feature :
- --
- Pulsed Drain Current-Max (IDM) :
- 152 A
- Height :
- 26.42mm
- Datasheets
- IXFL38N100Q2
N-Channel Tube 280m Ω @ 19A, 10V ±30V 13500pF @ 25V 250nC @ 10V 1000V ISOPLUS264™
IXFL38N100Q2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 13500pF @ 25V.This device has a continuous drain current (ID) of [29A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1kV, the drain-source breakdown voltage is 1kV.A device's drain current is its maximum continuous current, and this device's drain current is 29 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 57 ns.A maximum pulsed drain current of 152 A is the maximum peak drain current rated for this device.MOSFETs have 280 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 25 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000 V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFL38N100Q2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 57 ns
based on its rated peak drain current 152 A.
single MOSFETs transistor is 280 mΩ
a 1000V drain to source voltage (Vdss)
IXFL38N100Q2 Applications
There are a lot of IXYS
IXFL38N100Q2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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