IXFL44N80

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Mfr.Part #
IXFL44N80
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 800V 44A ISOPLUS264
Stock
47,392
In Stock :
47,392

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Pins :
264
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max :
550W Tc
Vgs (Max) :
±20V
Product Status :
Obsolete
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Manufacturer :
IXYS
Length :
20.29mm
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
Pbfree Code :
yes
Package Shape :
RECTANGULAR
Mounting Style :
Through Hole
Published :
2003
Base Product Number :
IXFL44
Drain to Source Voltage (Vdss) :
800V
Power Dissipation (Max) :
550W (Tc)
RoHS Status :
RoHS Compliant
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
4V @ 8mA
JESD-30 Code :
R-PSIP-T3
Product Category :
MOSFET
Fall Time (Typ) :
24 ns
Drain to Source Breakdown Voltage :
800V
Reach Compliance Code :
Compliant
Configuration :
Single
Drain-source On Resistance-Max :
0.165Ohm
Mounting Type :
Through Hole
Minimum Operating Temperature :
- 55 C
Input Capacitance (Ciss) (Max) @ Vds :
10000pF @ 25V
Pulsed Drain Current-Max (IDM) :
176A
Terminal Position :
Single
Number of Terminations :
3
Continuous Drain Current (ID) :
44A
FET Feature :
--
Transistor Type :
1 N-Channel
Package / Case :
ISOPLUS264™
Turn On Delay Time :
35 ns
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
550W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Tradename :
HyperFET
Number of Channels :
1 Channel
Case Connection :
Isolated
Transistor Polarity :
N-Channel
Pin Count :
3
Supplier Device Package :
ISOPLUS264™
Subcategory :
MOSFETs
Product Type :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminals :
3
Terminal Form :
THROUGH-HOLE
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
165m Ω @ 22A, 10V
Qualification Status :
Not Qualified
FET Type :
N-Channel
Turn-Off Delay Time :
100 ns
Channel Mode :
Enhancement
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Width :
5.21mm
JESD-609 Code :
e1
Maximum Operating Temperature :
+ 150 C
Avalanche Energy Rating (Eas) :
4000 mJ
Number of Elements :
1
Height :
26.42mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Brand :
IXYS
Rise Time :
48ns
Additional Feature :
AVALANCHE RATED
Surface Mount :
No
DS Breakdown Voltage-Min :
800 V
Polarity/Channel Type :
N-Channel
RoHS :
Details
Package :
Tube
Series :
HiPerFET™
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
380nC @ 10V
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL44N80 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:264, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:ISOPLUS264™, Number of Channels:1 Channel, IXFL44N80 pinout, IXFL44N80 datasheet PDF, IXFL44N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL44N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 165m Ω @ 22A, 10V ±20V 10000pF @ 25V 380nC @ 10V 800V ISOPLUS264™

IXFL44N80 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 4000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 10000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 44A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 176A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFL44N80 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 176A.
a 800V drain to source voltage (Vdss)


IXFL44N80 Applications


There are a lot of IXYS
IXFL44N80 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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