IXFL44N80
- Mfr.Part #
- IXFL44N80
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 44A ISOPLUS264
- Stock
- 47,392
- In Stock :
- 47,392
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- HiPerFET™
- Rds On (Max) @ Id, Vgs :
- 165m Ω @ 22A, 10V
- Turn On Delay Time :
- 35 ns
- Configuration :
- Single
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Channel Mode :
- Enhancement
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- Isolated
- Power Dissipation :
- 550W
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 800V
- Power Dissipation-Max :
- 550W Tc
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 24 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Supplier Device Package :
- ISOPLUS264™
- Transistor Element Material :
- SILICON
- Number of Terminals :
- 3
- Length :
- 20.29mm
- Package :
- Tube
- Product Type :
- MOSFET
- Reach Compliance Code :
- Compliant
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 800V
- Subcategory :
- MOSFETs
- Transistor Type :
- 1 N-Channel
- JESD-30 Code :
- R-PSIP-T3
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2003
- Turn-Off Delay Time :
- 100 ns
- Tradename :
- HyperFET
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.165Ohm
- Qualification Status :
- Not Qualified
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 44A
- Maximum Operating Temperature :
- + 150 C
- Number of Pins :
- 264
- Minimum Operating Temperature :
- - 55 C
- RoHS :
- Details
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Pulsed Drain Current-Max (IDM) :
- 176A
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Category :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 10000pF @ 25V
- Height :
- 26.42mm
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- FET Feature :
- --
- Product Status :
- Obsolete
- DS Breakdown Voltage-Min :
- 800 V
- Mounting Type :
- Through Hole
- Rise Time :
- 48ns
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tube
- Number of Channels :
- 1 Channel
- Width :
- 5.21mm
- Power Dissipation (Max) :
- 550W (Tc)
- Mounting Style :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Package / Case :
- ISOPLUS264™
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Product Number :
- IXFL44
- Number of Terminations :
- 3
- Surface Mount :
- No
- Pin Count :
- 3
- Manufacturer :
- IXYS
- JESD-609 Code :
- e1
- Package Shape :
- RECTANGULAR
- Brand :
- IXYS
- Additional Feature :
- AVALANCHE RATED
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- IXFL44N80
IXFL44N80 Documents
N-Channel Tube 165m Ω @ 22A, 10V ±20V 10000pF @ 25V 380nC @ 10V 800V ISOPLUS264™
IXFL44N80 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 4000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 10000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 44A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 176A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFL44N80 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 176A.
a 800V drain to source voltage (Vdss)
IXFL44N80 Applications
There are a lot of IXYS
IXFL44N80 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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