IXFL44N80
- Mfr.Part #
- IXFL44N80
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 44A ISOPLUS264
- Stock
- 47,392
- In Stock :
- 47,392
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Pins :
- 264
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 550W Tc
- Vgs (Max) :
- ±20V
- Product Status :
- Obsolete
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Manufacturer :
- IXYS
- Length :
- 20.29mm
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Mounting Style :
- Through Hole
- Published :
- 2003
- Base Product Number :
- IXFL44
- Drain to Source Voltage (Vdss) :
- 800V
- Power Dissipation (Max) :
- 550W (Tc)
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- JESD-30 Code :
- R-PSIP-T3
- Product Category :
- MOSFET
- Fall Time (Typ) :
- 24 ns
- Drain to Source Breakdown Voltage :
- 800V
- Reach Compliance Code :
- Compliant
- Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.165Ohm
- Mounting Type :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Input Capacitance (Ciss) (Max) @ Vds :
- 10000pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 176A
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 44A
- FET Feature :
- --
- Transistor Type :
- 1 N-Channel
- Package / Case :
- ISOPLUS264™
- Turn On Delay Time :
- 35 ns
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 550W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Tradename :
- HyperFET
- Number of Channels :
- 1 Channel
- Case Connection :
- Isolated
- Transistor Polarity :
- N-Channel
- Pin Count :
- 3
- Supplier Device Package :
- ISOPLUS264™
- Subcategory :
- MOSFETs
- Product Type :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminals :
- 3
- Terminal Form :
- THROUGH-HOLE
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 165m Ω @ 22A, 10V
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 100 ns
- Channel Mode :
- Enhancement
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 5.21mm
- JESD-609 Code :
- e1
- Maximum Operating Temperature :
- + 150 C
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Number of Elements :
- 1
- Height :
- 26.42mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- Rise Time :
- 48ns
- Additional Feature :
- AVALANCHE RATED
- Surface Mount :
- No
- DS Breakdown Voltage-Min :
- 800 V
- Polarity/Channel Type :
- N-Channel
- RoHS :
- Details
- Package :
- Tube
- Series :
- HiPerFET™
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- Datasheets
- IXFL44N80
IXFL44N80 Documents
N-Channel Tube 165m Ω @ 22A, 10V ±20V 10000pF @ 25V 380nC @ 10V 800V ISOPLUS264™
IXFL44N80 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 4000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 10000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 44A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 176A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFL44N80 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 176A.
a 800V drain to source voltage (Vdss)
IXFL44N80 Applications
There are a lot of IXYS
IXFL44N80 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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