IXFL44N80

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Mfr.Part #
IXFL44N80
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 800V 44A ISOPLUS264
Stock
47,392
In Stock :
47,392

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Series :
HiPerFET™
Rds On (Max) @ Id, Vgs :
165m Ω @ 22A, 10V
Turn On Delay Time :
35 ns
Configuration :
Single
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 8mA
Channel Mode :
Enhancement
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
Isolated
Power Dissipation :
550W
Pbfree Code :
yes
Drain to Source Breakdown Voltage :
800V
Power Dissipation-Max :
550W Tc
Vgs (Max) :
±20V
Fall Time (Typ) :
24 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Supplier Device Package :
ISOPLUS264™
Transistor Element Material :
SILICON
Number of Terminals :
3
Length :
20.29mm
Package :
Tube
Product Type :
MOSFET
Reach Compliance Code :
Compliant
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
800V
Subcategory :
MOSFETs
Transistor Type :
1 N-Channel
JESD-30 Code :
R-PSIP-T3
Operating Mode :
ENHANCEMENT MODE
Published :
2003
Turn-Off Delay Time :
100 ns
Tradename :
HyperFET
Gate Charge (Qg) (Max) @ Vgs :
380nC @ 10V
Transistor Application :
SWITCHING
Drain-source On Resistance-Max :
0.165Ohm
Qualification Status :
Not Qualified
Transistor Polarity :
N-Channel
Number of Elements :
1
Continuous Drain Current (ID) :
44A
Maximum Operating Temperature :
+ 150 C
Number of Pins :
264
Minimum Operating Temperature :
- 55 C
RoHS :
Details
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Pulsed Drain Current-Max (IDM) :
176A
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
RoHS Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Category :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
10000pF @ 25V
Height :
26.42mm
Avalanche Energy Rating (Eas) :
4000 mJ
FET Feature :
--
Product Status :
Obsolete
DS Breakdown Voltage-Min :
800 V
Mounting Type :
Through Hole
Rise Time :
48ns
Polarity/Channel Type :
N-Channel
Packaging :
Tube
Number of Channels :
1 Channel
Width :
5.21mm
Power Dissipation (Max) :
550W (Tc)
Mounting Style :
Through Hole
Terminal Form :
THROUGH-HOLE
Package / Case :
ISOPLUS264™
Mount :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Base Product Number :
IXFL44
Number of Terminations :
3
Surface Mount :
No
Pin Count :
3
Manufacturer :
IXYS
JESD-609 Code :
e1
Package Shape :
RECTANGULAR
Brand :
IXYS
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL44N80 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:264, Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:ISOPLUS264™, Number of Terminations:3, IXFL44N80 pinout, IXFL44N80 datasheet PDF, IXFL44N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL44N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 165m Ω @ 22A, 10V ±20V 10000pF @ 25V 380nC @ 10V 800V ISOPLUS264™

IXFL44N80 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 4000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 10000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 44A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 176A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFL44N80 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 176A.
a 800V drain to source voltage (Vdss)


IXFL44N80 Applications


There are a lot of IXYS
IXFL44N80 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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