IXFL44N80
- Mfr.Part #
- IXFL44N80
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 44A ISOPLUS264
- Stock
- 47,392
- In Stock :
- 47,392
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- Height :
- 26.42mm
- Number of Pins :
- 264
- RoHS :
- Details
- Drain to Source Breakdown Voltage :
- 800V
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 800 V
- Pin Count :
- 3
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Drain-source On Resistance-Max :
- 0.165Ohm
- Continuous Drain Current (ID) :
- 44A
- Base Product Number :
- IXFL44
- Power Dissipation (Max) :
- 550W (Tc)
- Package / Case :
- ISOPLUS264™
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- Compliant
- Turn On Delay Time :
- 35 ns
- Turn-Off Delay Time :
- 100 ns
- Width :
- 5.21mm
- Pulsed Drain Current-Max (IDM) :
- 176A
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- Isolated
- Number of Terminals :
- 3
- Series :
- HiPerFET™
- Power Dissipation :
- 550W
- Power Dissipation-Max :
- 550W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 48ns
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- ISOPLUS264™
- FET Feature :
- --
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 800V
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Tradename :
- HyperFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Channel Mode :
- Enhancement
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- Transistor Polarity :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 10000pF @ 25V
- RoHS Status :
- RoHS Compliant
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Mounting Style :
- Through Hole
- JESD-30 Code :
- R-PSIP-T3
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Length :
- 20.29mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- Product Type :
- MOSFET
- Published :
- 2003
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- Number of Channels :
- 1 Channel
- Fall Time (Typ) :
- 24 ns
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- JESD-609 Code :
- e1
- Product Status :
- Obsolete
- Number of Terminations :
- 3
- Subcategory :
- MOSFETs
- Transistor Type :
- 1 N-Channel
- Package :
- Tube
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 165m Ω @ 22A, 10V
- Datasheets
- IXFL44N80
IXFL44N80 Documents
N-Channel Tube 165m Ω @ 22A, 10V ±20V 10000pF @ 25V 380nC @ 10V 800V ISOPLUS264™
IXFL44N80 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 4000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 10000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 44A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 176A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFL44N80 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 176A.
a 800V drain to source voltage (Vdss)
IXFL44N80 Applications
There are a lot of IXYS
IXFL44N80 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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