IXFL44N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Transistor Type :

1 N-Channel

Package :

Tube

Vgs (Max) :

±20V

Product Category :

MOSFET

Brand :

IXYS

Reach Compliance Code :

Compliant

Turn-Off Delay Time :

100 ns

Mounting Type :

Through Hole

Height :

26.42mm

Series :

HiPerFET™

Input Capacitance (Ciss) (Max) @ Vds :

10000pF @ 25V

RoHS :

Details

Tradename :

HyperFET

Polarity/Channel Type :

N-Channel

Base Product Number :

IXFL44

Pin Count :

3

Transistor Application :

SWITCHING

Transistor Polarity :

N-Channel

JESD-30 Code :

R-PSIP-T3

Terminal Position :

Single

Channel Mode :

Enhancement

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

380nC @ 10V

Width :

5.21mm

Element Configuration :

Single

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

165m Ω @ 22A, 10V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Package / Case :

ISOPLUS264™

Operating Mode :

ENHANCEMENT MODE

Case Connection :

Isolated

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manufacturer :

IXYS

Drain to Source Voltage (Vdss) :

800V

Continuous Drain Current (ID) :

44A

Number of Pins :

264

Subcategory :

MOSFETs

Number of Terminations :

3

Power Dissipation (Max) :

550W (Tc)

Fall Time (Typ) :

24 ns

Vgs(th) (Max) @ Id :

4V @ 8mA

Published :

2003

Mounting Style :

Through Hole

Mount :

Through Hole

Number of Terminals :

3

Drain-source On Resistance-Max :

0.165Ohm

JESD-609 Code :

e1

Product Type :

MOSFET

DS Breakdown Voltage-Min :

800 V

Power Dissipation-Max :

550W Tc

Configuration :

Single

Surface Mount :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED

Length :

20.29mm

Terminal Form :

THROUGH-HOLE

Minimum Operating Temperature :

- 55 C

Supplier Device Package :

ISOPLUS264™

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Avalanche Energy Rating (Eas) :

4000 mJ

Maximum Operating Temperature :

+ 150 C

Rise Time :

48ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pulsed Drain Current-Max (IDM) :

176A

FET Feature :

--

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Turn On Delay Time :

35 ns

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

800V

Product Status :

Obsolete

Power Dissipation :

550W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1 Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant