IXFL30N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

60ns

Fall Time (Typ) :

56 ns

Length :

20.29 mm

Operating Temperature :

-55°C~150°C TJ

Package :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HiPerFET™, PolarP2™

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

380m Ω @ 15A, 10V

Number of Channels :

1 Channel

Factory Lead Time :

26 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Product Category :

MOSFET

Maximum Operating Temperature :

+ 150 C

Pin Count :

3

Channel Mode :

Enhancement

Manufacturer :

IXYS

Tradename :

HiPerFET

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Polarity/Channel Type :

N-Channel

Package / Case :

ISOPLUSi5-Pak™

Drain to Source Voltage (Vdss) :

1200V

Element Configuration :

Single

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

357 W

Power Dissipation :

357W

Drain Current-Max (Abs) (ID) :

18 A

Mounting Style :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Product Type :

MOSFET

Drain to Source Breakdown Voltage :

1.2kV

Height :

26.42 mm

Gate Charge (Qg) (Max) @ Vgs :

310nC @ 10V

Number of Terminals :

3

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

1500 mJ

Base Product Number :

IXFL30

Surface Mount :

No

Published :

2011

Vgs(th) (Max) @ Id :

6.5V @ 1mA

DS Breakdown Voltage-Min :

1200 V

Reach Compliance Code :

Compliant

Power Dissipation-Max :

357W Tc

Mounting Type :

Through Hole

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

80A

RoHS Status :

ROHS3 Compliant

Configuration :

Single

Transistor Type :

1 N-Channel

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

357W (Tc)

Width :

5.21 mm

Turn-Off Delay Time :

95 ns

Transistor Polarity :

N-Channel

Drain-source On Resistance-Max :

0.38 Ω

FET Type :

N-Channel

Case Connection :

Isolated

Product Status :

Active

Brand :

IXYS

Packaging :

Tube

JESD-30 Code :

R-PSIP-T3

Supplier Device Package :

ISOPLUSi5-Pak™

Number of Pins :

3

RoHS :

Details

Minimum Operating Temperature :

- 55 C

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Continuous Drain Current (ID) :

18A

Vgs (Max) :

±30V

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V