IXFL30N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

JESD-30 Code :

R-PSIP-T3

Mount :

Through Hole

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

1500 mJ

Pulsed Drain Current-Max (IDM) :

80A

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Drain-source On Resistance-Max :

0.38 Ω

Minimum Operating Temperature :

- 55 C

Height :

26.42 mm

FET Feature :

--

Pin Count :

3

Number of Channels :

1 Channel

Transistor Element Material :

SILICON

Base Product Number :

IXFL30

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Polarity :

N-Channel

Vgs (Max) :

±30V

Mounting Style :

Through Hole

Series :

HiPerFET™, PolarP2™

Transistor Type :

1 N-Channel

Channel Mode :

Enhancement

Package / Case :

ISOPLUSi5-Pak™

Continuous Drain Current (ID) :

18A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Category :

MOSFET

Gate to Source Voltage (Vgs) :

30V

Reach Compliance Code :

Compliant

Terminal Form :

THROUGH-HOLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

20.29 mm

DS Breakdown Voltage-Min :

1200 V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

FET Type :

N-Channel

Qualification Status :

Not Qualified

Rise Time :

60ns

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

95 ns

RoHS :

Details

Supplier Device Package :

ISOPLUSi5-Pak™

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

357 W

Operating Temperature :

-55°C~150°C TJ

Case Connection :

Isolated

Published :

2011

Power Dissipation-Max :

357W Tc

Drain to Source Breakdown Voltage :

1.2kV

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Package :

Tube

Number of Elements :

1

Packaging :

Tube

Power Dissipation :

357W

Rds On (Max) @ Id, Vgs :

380m Ω @ 15A, 10V

Configuration :

Single

Drain to Source Voltage (Vdss) :

1200V

Polarity/Channel Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Surface Mount :

No

Fall Time (Typ) :

56 ns

Manufacturer :

IXYS

Product Type :

MOSFET

Drain Current-Max (Abs) (ID) :

18 A

Tradename :

HiPerFET

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Product Status :

Active

Package Shape :

RECTANGULAR

Factory Lead Time :

26 Weeks

RoHS Status :

ROHS3 Compliant

Number of Terminals :

3

Gate Charge (Qg) (Max) @ Vgs :

310nC @ 10V

Width :

5.21 mm

Brand :

IXYS

Terminal Position :

Single

Power Dissipation (Max) :

357W (Tc)