IXFL30N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

1200V

Configuration :

Single

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Pulsed Drain Current-Max (IDM) :

80A

Package Shape :

RECTANGULAR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Number of Terminals :

3

Series :

HiPerFET™, PolarP2™

Transistor Type :

1 N-Channel

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS

Pbfree Code :

yes

Minimum Operating Temperature :

- 55 C

Mount :

Through Hole

Rise Time :

60ns

Width :

5.21 mm

Length :

20.29 mm

Drain Current-Max (Abs) (ID) :

18 A

Surface Mount :

No

Power Dissipation (Max) :

357W (Tc)

Number of Channels :

1 Channel

Terminal Form :

THROUGH-HOLE

Drain-source On Resistance-Max :

0.38 Ω

DS Breakdown Voltage-Min :

1200 V

Package / Case :

ISOPLUSi5-Pak™

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Tradename :

HiPerFET

Supplier Device Package :

ISOPLUSi5-Pak™

Height :

26.42 mm

Case Connection :

Isolated

FET Feature :

--

JESD-30 Code :

R-PSIP-T3

Factory Lead Time :

26 Weeks

Continuous Drain Current (ID) :

18A

Gate Charge (Qg) (Max) @ Vgs :

310nC @ 10V

Polarity/Channel Type :

N-Channel

Product Category :

MOSFET

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

357W Tc

Brand :

IXYS

Mounting Type :

Through Hole

Published :

2011

Element Configuration :

Single

Number of Pins :

3

Maximum Operating Temperature :

+ 150 C

Pin Count :

3

Power Dissipation :

357W

Reach Compliance Code :

Compliant

Power Dissipation-Max (Abs) :

357 W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXFL30

RoHS :

Details

Turn-Off Delay Time :

95 ns

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Drain to Source Breakdown Voltage :

1.2kV

Product Type :

MOSFET

Mounting Style :

Through Hole

Fall Time (Typ) :

56 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Product Status :

Active

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Rds On (Max) @ Id, Vgs :

380m Ω @ 15A, 10V

Packaging :

Tube

Avalanche Energy Rating (Eas) :

1500 mJ

Package :

Tube