IXFL30N120P

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Mfr.Part #
IXFL30N120P
Manufacturer
Littelfuse
Package / Case
ISOPLUSi5-Pak™
Datasheet
Download
Description
MOSFET N-CH 1200V 18A I5PAK
Stock
45,798
In Stock :
45,798

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
60ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
95 ns
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
30V
Package / Case :
ISOPLUSi5-Pak™
Package Shape :
RECTANGULAR
Element Configuration :
Single
Terminal Form :
THROUGH-HOLE
Length :
20.29 mm
Drain Current-Max (Abs) (ID) :
18 A
Drain to Source Breakdown Voltage :
1.2kV
Qualification Status :
Not Qualified
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
357W Tc
Gate Charge (Qg) (Max) @ Vgs :
310nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
Maximum Operating Temperature :
+ 150 C
Product Status :
Active
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
No
Configuration :
Single
JESD-30 Code :
R-PSIP-T3
Base Product Number :
IXFL30
Minimum Operating Temperature :
- 55 C
Current - Continuous Drain (Id) @ 25°C :
18A Tc
Continuous Drain Current (ID) :
18A
Transistor Type :
1 N-Channel
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Polarity/Channel Type :
N-Channel
Fall Time (Typ) :
56 ns
Avalanche Energy Rating (Eas) :
1500 mJ
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Number of Channels :
1 Channel
Drain-source On Resistance-Max :
0.38 Ω
Power Dissipation-Max (Abs) :
357 W
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
19000pF @ 25V
Transistor Polarity :
N-Channel
Manufacturer :
IXYS
Channel Mode :
Enhancement
Product Category :
MOSFET
Power Dissipation (Max) :
357W (Tc)
DS Breakdown Voltage-Min :
1200 V
Published :
2011
Mounting Style :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
Isolated
Transistor Element Material :
SILICON
Number of Terminals :
3
Drain to Source Voltage (Vdss) :
1200V
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Brand :
IXYS
Factory Lead Time :
26 Weeks
Mount :
Through Hole
Pulsed Drain Current-Max (IDM) :
80A
Reach Compliance Code :
Compliant
Vgs (Max) :
±30V
Transistor Application :
SWITCHING
Pbfree Code :
yes
Pin Count :
3
Supplier Device Package :
ISOPLUSi5-Pak™
Power Dissipation :
357W
Number of Pins :
3
Width :
5.21 mm
Number of Elements :
1
Terminal Position :
Single
FET Feature :
--
Rds On (Max) @ Id, Vgs :
380m Ω @ 15A, 10V
RoHS :
Details
Product Type :
MOSFET
Series :
HiPerFET™, PolarP2™
Tradename :
HiPerFET
Height :
26.42 mm
Datasheets
IXFL30N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL30N120P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:ISOPLUSi5-Pak™, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:3, Number of Pins:3, IXFL30N120P pinout, IXFL30N120P datasheet PDF, IXFL30N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL30N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFL30N120P


N-Channel Tube 380m Ω @ 15A, 10V ±30V 19000pF @ 25V 310nC @ 10V 1200V ISOPLUSi5-Pak™

IXFL30N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 19000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 18A.With a drain-source breakdown voltage of 1.2kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1.2kV.18 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 95 ns.Peak drain current for this device is 80A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1200 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFL30N120P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 80A.
a 1200V drain to source voltage (Vdss)


IXFL30N120P Applications


There are a lot of IXYS
IXFL30N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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